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of Materials Research
The effects of residual stress induced during the annealing process on the microstructural evolution and electrical properties of Pb(Zr,Ti)O3 (PZT) films were investigated. PZT films were deposited on platinized silicon substrates by the radio frequency magnetron sputtering method using a single oxide target. Compressive stress was induced in the film by bending the silicon substrate during sputtering using a specially designed substrate holder and subsequently annealing the film without the holder. Without the residual stress, the PZT film was severely cracked when it was thicker than 2 μm due to the thermal expansion mismatch between the PZT and the Si substrate. On the other hand, when the residual stress was applied, no cracks were detected in the film for thicknesses of up to 4 μm. The suppression of crack formation was attributed to the residual compressive stress that compensated for the tensile stress generated during and/or after the annealing process. The electrical properties of the PZT film with the residual stress were improved compared to those of the PZT film without the residual stress. © 2005 MRS
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