Ko-Wei Chang
Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
Jih-Jen Wu
Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China, and Center for Micro/Nano Technology Research, National Cheng Kung University, Tainan, Taiwan, Republic of China
Well-aligned Ga2O3 nanowires were formed on the sapphire (0001) substrates at temperatures of 650-450 °C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. Structural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire (0001) with Ga2O3/ sapphire orientational relationship [¯201]g||[0001] and [2¯11]g||[11¯20]. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 °C via the versus mechanism was also demonstrated. Instead of being catalysts in the VLS method, the Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the versus method.