J-M. Baribeau
Institute for Microstructural Sciences and National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
N.L. Rowell
Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
D.J. Lockwood
Institute for Microstructural Sciences and National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
We review recent advances in the growth of Si1-xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1-xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1-xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.