Formation of new surface layers on ceramics
by ion assisted reaction
S.K. Koh, Y-B. Son, J-S. Gam, K-S. Han, W.K.
Choi, H-J. Jung
(Korea Institute of Science and
Technology)
<*p(0,21.6,0,9.5,0,0,g,"U.S.
English")$f"Helvetica-Condensed">Ar
keV energy were irradiated on aluminum nitride in an
O2 environment and on aluminum oxide in a
N2 environment. AION on AIN and AIN on
Al2O3 are formed by the
Ar
and N2 gas environments, respectively, and the
formation of new surface layers are confirmed on the basis of Al2p near
core levels and O1s, N1s core levels XPS depth profile analysis. Cu(1000 Å
) films were deposited by ion-beam sputtering on
Ar
change of the adhesion strength was investigated by a scratch test. Cu
films deposited on the irradiated AIN under an O2
environment showed higher bond strength than that on the unirradiated AIN.
The improvement of bond strength of Cu films on the AIN surface resulted
from the interface bonds between Cu and the surface layers. The bending
strength of polycrystalline
Al2O3 irradiated by
Ar
was also increased and the formation of nitride layer on the alumina was
confirmed. Possible new surface layer formation mechanism on ceramics by
the ion assisted reaction has been discussed in terms of surface analysis,
chemical bond, and mechanical strength.
Order No.:
JA809-030 © 1998 MRS
Go to September 1998 Table of Contents
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