Effect of the nanoparticles on the structure
and crystallization of amorphous silicon thin films produced by rf glow
dischargeE. Bertran*, S.N.
Sharma*, G. Viera*, J.
Costa+, P. St'ahel#, P. Roca
i Cabarrocas#
(*Universitat de
Barcelona, +Universitat de Girona, #CNRS-UPR 258)
Thin films
of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced
chemical vapor deposition in the presence of silicon nanoparticles at 100°
C substrate temperature using silane and hydrogen gas mixture under
continuous wave (cw) plasma conditions. The nanostructure of the
films has been demonstrated by diverse ways: transmission electron
microscopy, Raman spectroscopy and x-ray diffraction, which have shown the
presence of ordered silicon clusters (1!=2 nm) embedded in an amorphous
silicon matrix. Due to the presence of these ordered domains, the films
crystallize faster than standard hydrogenated amorphous silicon samples,
as evidenced by electrical measurements during the thermal annealing.
Order No.:
JA809-020 © 1998 MRS

Go to September 1998 Table of Contents

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