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JMR Abstracts: September 1998
Communication
Role of yttria-stabilized zirconia produced
by ion-beam-assisted-deposition on the properties of
RuO2 on
SiO2/SiQ.X. Jia, P. Arendt, J.R. Groves, Y. Fan, J.M. Roper, S.R. Foltyn
(Los Alamos National Laboratory)
Highly
conductive biaxially textured RuO2 thin films were
deposited on technically important SiO2/Si
substrates by pulsed laser deposition, where yttria-stabilized zirconia
(YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a
template to enhance the biaxial texture of RuO2 on
SiO2/Si. The biaxially oriented
RuO2 had a room-temperature resistivity of
37<> mW-cm and residual resistivity
ratio above 2. We then deposited
Ba0.5Sr0.5TiO3
thin films on
RuO2/IBAD-YSZ/SiO2/Si.
The Ba0.5Sr0.5TiO3
had a pure (111) orientation normal to the substrate surface and a
dielectric constant above 360 at 100 kHz.
Order No.:
JA809-017 © 1998 MRS
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