Oxidation of Sn thin films to
SnO2. Micro-Raman mapping and x-ray diffraction
studiesL. Sangaletti, L.E. Depero, B. Allieri, F. Pioselli, E. Comini, G.
Sberveglieri, M. Zocchi
(Università di Brescia)
The
oxidation of tin layers deposited onto alumina substrates is investigated
with the aim to identify the different steps of the process and obtain
information on the sample homogeneity, phase segregation, and degree of
oxidation. It is shown that at least three phases co-exist at 450°C:
Sn, SnO, and SnO2 and remarkable inhomogeneities,
already visible at an optical inspection, are found in the thin film. A
micro-Raman mapping of the layer shows that these inhomogeneities are
related to the presence of different Sn oxidation states, as evidenced by
the inhomogeneous distribution of SnO and SnOx
Raman bands. The thin film becomes homogeneous after annealing treatments
above 550°C, where only the SnO2 cassiterite phase
is detected.
Order No.:
JA809-016 © 1998 MRS
Go to September 1998 Table of Contents
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