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Segregation of vanadium at the WC/Co interface in VC-doped WC-Co
A. Jaroenworaluck*, T. Yamamoto*, Y. Ikuhara', T. Sakuma*, T. Taniuchi+, K. Okada+, T. Tanase+ (*The University of Tokyo, +Mitsubishi Materials Corp.)
Morphology of carbide grain in WC-1 2wt.%Co-0.5wt.%VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are facetted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001 ) type habit plane than the (1010) one. The retardation of the grain growth of carbide grains in the Vcdoped WC-Co is closely related to the formation of the facetted WC/Co interface.
Order No.: JA809-014 © 1998 MRS
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