Diffusion-limited and asymmetric growth of amorphous layer in Ni/Zr bilayer upon annealing
W.S. Lai*, B.X. Liu+
(*Tsinghua University, +Nanjing University)
Asymmetric growth of amorphous layer in a Ni/Zr bilayer, in which a thin disordered interlayer is present, upon annealing at medium temperatures is observed by molecular-dynamics simulation with an n-body potential. It is shown that the amorphous layer is extended from the interlayer with different speeds towards two opposite directions and that the growth kinetics follows a time dependence of t1/2, indicating amorphization upon annealing in the Ni/Zr bilayer is indeed through a diffusion-limited reaction. Besides, two low temperature limits allowing the growth of amorphous layer towards Ni and Zr layers are also obtained.
Keywords: glasses, metallic; phase transformation; computer simulation
Order No.: JA806-039 © 1998 MRS

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