Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method
M.P. Valkonen
(
In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2Ð1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS the growth appeared to be nearly layerwise. In addition, in-situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.
Keywords: optoelectronic materials; thin film; chemical synthesis
Order No.: JA806-035 © 1998 MRS
Go to June 1998 Table of Contents
|
Home •
News •
Society Information •
What's New •
Site Map •
Comments •
Search Contacts • MRS Meetings • Membership • MRS Publications • Marketing Opportunities
|
