Communication

Preparation of wurtzitic AIN thin films with a novel crystallographic alignment on MgO substrates by molecular-beam epitaxy
J.R. Heffelfinger, D.L. Medlin, K.F. McCarty
(Sandia National Laboratories)

Thin films of wurtzitic AIN have been deposited by molecular-beam epitaxy onto (001) oriented MgO substrates. The films are epitactic and align with the (2110)_AIN <>|| (220)_MgO and the [0111]_AIN <>|| [001]_MgO, as evidenced by transmission electron microscopy. This configuration, which matches a close-packed direction of the film and substrate, allows for growth of two symmetrically equivalent orientation variants of the AlN film. These variants are distinguished by a 90¡ rotation about the [0111]_AIN direction that is normal to the substrate surface. Each variant also aligns the (0112)_AIN <>|| (220)_MgO and the (1101)_AlN to within 5¡ of being parallel to the (200)_MgO. The microstructure of the AlN films and origins of these novel alignments are discussed.
Keywords: ceramics; crystallographic structure; physical vapor deposition (PVD)
Order No.: JA806-002 © 1998 MRS

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