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| Suggested format for citation of papers in this volume: |
| List all author names: Title of article, in Chemical-Mechanical Planarization—Integration, Technology and Reliability, edited by Ashok Kumar, Jeffrey A. Lee, Yaw S. Obeng, Ingrid Vos, and Earl C. Johns (Mater. Res. Soc. Symp. Proc. 867, Warrendale, PA , 2005), insert paper number. |
Effect of Corrosion Inhibitor (BTA) in Citric Acid based Slurry on Cu CMP W1.3
In-Kwon Kim, Young-Jae Kang, Yi-Koan Hong, and Jin-Goo Park
Effect of Temperature on Defect Generation During Copper Chemical Mechanical Planarization W1.5
Subrahmanya Mudhivarthi, Parshuram Zantye, Ashok Kumar, and Jeung-Yeop Shim
Potential-pH Diagrams of Interest to Chemical Mechanical Planarization of Copper Thin Films W1.6
Serdar Aksu
Investigation on Abrasive Free Copper Chemical Mechanical Planarization for Cu/Low-k and Cu/Ultra Low-k interconnects W1.7
S. Balakumar, T. Haque, R. Kumar, A.S. Kumar, and M. Rahman
The Adhesion of Pad Particles on Wafer Surfaces During Cu CMP W1.9
Jae-Hoon Song, Ja-Hyung Han, Yi-Koan Hong, Young-Jae Kang, Jin-Goo Park, Ju-Ho Maeng, and Young-Man Won
Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP) W1.10
Youngki Hong, Udaya B. Patri, Suresh Ramakrishnan, and S.V. Babu
Role of Molecular Structure of Complexing/Chelating Agents in Copper CMP Slurries W1.11
Udaya B. Patri, S. Pandija, and S.V. Babu
Instantaneous Fluid Film Imaging in Chemical Mechanical Planarization W2.3
Daniel Apone, Caprice Gray, Chris Rogers, Vincent P. Manno, Chris Barns, Mansour Moinpour, Sriram Anjur, Ara Philipossian
Feasibility Oo Detecting Barrier Layer to Low-k Transition in Copper CMP Using Raman Spectroscopy W2.4
S. Kondoju, C. Juncker, P. Lucas, S. Raghavan , P. Fischer, M. Moinpour, and A. Oehler
AFM Measurements of Adhesion between Actual CMP Slurry Particles and Various Substrates W2.5
Yong Liu, Bogdan Zdyrko, Alex Tregub, Mansour Moinpour, Mark Buehler, and Igor Luzinov
Abrasive Contribution to CMP Friction W2.6
David R. Evans and Michael R. Oliver
Stress Characterization of Post-CMP Copper Films Planarized Using Novel Low-Shear and Surface-Engineered Pads W2.7
Manish Deopura, Edward Hwang, Sudhanshu Misra, and Pradip K. Roy
Effect of Particle Size Distribution on Filter Lifetime in Three Slurry Pump Systems W2.8
Mark R. Litchy and Reto Schoeb
A Universal CMP Process Description Language for Standardization W2.9
Takafumi Yoshida
Optimization of Psiloquest's Application Specific CMP Pads for Commercialization W3.3
Parshuram B. Zantye, Yaw Obeng, S. Mudhivarthi, and Ashok Kumar
Integration of CMP Fixed Abrasive Polishing into the Manufacturing of Thick Film SOI Substrates W3.4
Martin Kulawski, Hannu Luoto, Kimmo Henttinen, Tommi Suni, Frauke Weimar, and Jari Mäkinen
The Effect of Pad Conditioning on Planarization Characteristics of Chemical Mechanical Polishing (CMP) With Ceria Slurry W3.5
Yuichi Yamamoto, Takaaki Kozuki, Shunichi Shibuki, Keiichi Maeda, Yasuaki Inoue, Shinji Tawara, and Naoki Toge
Correlation of Defects on Dielectric Surfaces With Large Particle Counts in Chemical-Mechanical Planarization (CMP) Slurries Using a New Single Particle Optical Sensing (SPOS) Technique W4.2
Edward E. Remsen, Sriram P. Anjur, David Boldridge, Mungai Kamiti, and Shoutian Li
CMP Compatibility of Partially Cured Benzocyclobutene (BCB) for a Via-First 3D IC Process W4.4
J.J. McMahon, F. Niklaus, R.J. Kumar, J. Yu, J.-Q. Lu, and R.J. Gutmann
CMP at the Wafer Edge--Modeling the Interaction Between Wafer Edge Geometry and Polish Performance W5.1
Xiaolin Xie and Duane Boning
Yield Improvement via Minimization of Step Height Non-Uniformity in Chemical Mechanical Planarization (CMP) W5.2
Muthukkumar Kadavasal, Sutee Eamkajornsiri, Abhijit Chandra, and Ashraf F. Bastawros
A Predictive Model for Controlling Wafer Level Polish Rate Uniformity in Oxide CMP W5.3
Tushar P. Merchant, Leonard J. Borucki, A. Scott Lawing, Suman K. Banerjee, and John N. Zabasajja
Quantitative In Situ Measurement of Asperity Compression Under the Wafer During Polishing W5.4
Caprice Gray, Daniel Apone, Chris Rogers, Vincent P. Manno, Chris Barns, Mansour Moinpour, Sriram Anjur, and Ara Philipossian
A Dishing Model for STI CMP Process W5.5
Shih-Hsiang Chang
On the Relationship of CMP Wafer Nanotopography to Groove-Scale Slurry Transport W5.7
Gregory P. Muldowney
Synergy Between Chemical Dissolution and Mechanical Abrasion During Chemical Mechanical Polishing of Copper W5.8
Wei Che, Ashraf Bastawros, and Abhijit Chandra
Modeling of Polishing Regimes in Chemical Mechanical Polishing W5.9
Suresh B. Yeruva, Chang-Won Park , and Brij M. Moudgil
Modeling Pattern Effects in Oxide CMP W5.10
R. Rzehak
Frictional Behavior and Particle Adhesion of Abrasive Particles During Cu CMP W6.2
Yi-Koan Hong, Ja-Hyung Han, Jae-Hoon Song, and Jin-Goo Park
Study on the Planarization behavior of Copper CMP Utilizing a Dense Pattern and a Global Step W6.3
Tilo Bormann and Johann W. Bartha
Effect of Slurry Temperature on Cu Chemical Mechanical Polishing With Different Oxidizing Agents W6.6
Subrahmanya Mudhivarthi and Ashok Kumar
Pattern Symmetry and CMP Process Simulation W6.7
Takafumi Yoshida
Polishing Slurries With Aluminate-Modified Colloidal Silica Abrasive W6.9
Irina Belov, Joo-Yun Kim, Paula Watkins, Martin Perry, and Keith Pierce
In Situ Chronoamperometry for CMP Slurry Investigations W7.3
Jian Zhang, Steven Grumbine, Phillip W. Carter, and Thomas Werts
Strong Synergistic Effects Between Ceria and Montmorillonite Particles in Glass CMP Slurries W7.4
Mingming Fang, Michael Ianiro, Don Eisenhour, and Jason St. Onge
The Adsorption Behaviors of Citric Acid on Abrasive Particles in Cu CMP Slurry W7.5
Young-Jae Kang, Yi-Koan Hong, Jae-Hoon Song, In-Kwon Kim, and Jin-Goo Park
Investigating the Effects of Diluting Solutions and Trace Metal Contamination on Aggregation Characteristics of Silica-Based ILD CMP Slurries W7.9
D. DeNardis, H. Choi, A. Kim, M. Moinpour, and A. Oehler
Characterization of the Chemical Effects of Ceria Slurries for Chemical Mechanical Polishing W8.3
J.T. Abiade, S. Yeruva, B. Moudgil, D. Kumar, and R.K. Singh
In Situ Metrology for End Point Detection During Chemical Mechanical Polishing of Shallow Trench Isolation Structure W8.4
Parshuram B. Zantye, S. Mudhivarthi, Ashok Kumar, and David Evans
Colloidal Silica Based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry W8.5
Kyoung-Ho Bu and Brij M. Moudgil
High Planarization Efficiency and Wide Process Window Using Electro-Chemical Mechanical Planarization (Ecmp™) W9.1
Feng Q Liu, Liang Chen, Alain Duboust, Stan Tsai, Antoine Manens, Yan Wang, and Wei-Yung Hsu
Advanced ELID Process Development for Grinding Silicon Wafers W9.2
M.M. Islam, A. Senthil Kumar, S. Balakumar , H.S. Lim, and M. Rahman
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