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| Suggested format for citation of papers in this volume: |
| List all author names: Title of article, in Rare-Earth Doping for Optoelectronic Applications, edited by Tom Gregorkiewicz, Yasufumi Fujiwara, Michal Lipson, John M. Zavada (Mater. Res. Soc. Symp. Proc. 866, Warrendale, PA , 2005), insert paper number. |
Erbium in Semiconductors: Where Are We Coming From; Where Are We Going? V1.1
A.R. Peaker
Erbium Doped Silicon Single- and Multilayer Structures for LED and Laser Applications V1.4
Zakhary F. Krasilnik, Boris A. Andreev, Tom Gregorkiewicz, Wolfgang Jantsch, Mark A.J. Klik, Denis I. Kryzhkov, Ludmila V. Krasilnikova, Viktor P. Kuznetsov, Hanka Przybylinska, Dmitry Yu. Remizov, Vladimir G. Shengurov, Viacheslav B. Shmagin, Margarita V. Stepikhova, Victor Yu. Timoshenko, Nguyen Q. Vinh, Artem N. Yablonskiy, and Denis M. Zhigunov
Multistep Resonant Excitation of Erbium Ions in Thin Silicon Oxide Layers V1.5
Z. Fleischman, Chr. Sandmann, V. Dierolf, M. White, Y. Zhao, J. Michel, M.A. Stolfi, and L. Dal Negro
High-Rate Deposition of Rare-Earth Doped Silicate Nanoparticles for Porous and Dense Optical Films V2.7
Craig R. Horne, Pierre de Mascarel, Russell Blume, Jesse Jur, Cecile Cohen-Jonathan, Michael Chapin, Jonathan Posner, Wei Cho Foo, Christian Honeker, Qing Zhu, Shiv Chiruvolu, Ronald Mosso, and William McGovern
GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices V3.1
Chanaka Munasinghe, Andrew Steckl, Ei Ei Nyein, Uwe Hömmerich, Hongying Peng, Henry Everitt, Zack Fleischman, Volkmar Dierolf, and John Zavada
Luminescence and Lifetime Properties of Europium Doped Gallium Nitride Compatible With CMOS Technology V3.2
Carl B. Poitras, Michal Lipson, Huaqiang Wu, and Michael G. Spencer
Visible and Infrared Emission From Er-Doped III-N Light Emitting Diodes V3.3
John M. Zavada, Ei Ei Nyein, Uwe Hömmerich, J. Li, J. Y. Lin, H. X. Jiang, P. Chow, and Jian-Wei Dong
Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE) V3.5
Ei Ei Nyein, Uwe Hömmerich, Chanaka Munasinghe, Andrew J. Steckl, and John M. Zavada
Combined Excitation Emission Spectroscopy of Europium Ions in GaN and AlGaN Films V3.6
V. Dierolf, Z. Fleischman, and C. Sandmann, A. Wakahara, T. Fujiwara, C. Munasinghe, and A. Steckl
Nonequilibrium Carrier Dynamics Studied in Er,O-Codoped GaAs by Pump-Probe Reflection Technique V3.7
Yasufumi Fujiwara, Kazuhiko Nakamura, Shoichi Takemoto, Yoshikazu Terai, Masato Suzuki, Atsushi Koizumi, Yoshikazu Takeda, and Masayoshi Tonouchi
On 2.7 µm Emission From Er-Doped Large Bandgap Hosts V3.8
H. Vrielinck, I. Izeddin, V.Y. Ivanov, T. Gregorkiewicz, F. Callens, D.S. Lee, A. J. Steckl, and N.M. Khaidukov
Energy-Back-Transfer Process in Rare-Earth Doped AlGaN V3.9
A. Wakahara, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, and H. Itho
High Resolution Site-Selective Studies of Erbium-Centers in GaN and GaN:Mg V3.10
V. Glukhanyuk, H. Przybylinska, A. Kozanecki, and W. Jantsch
Rare Earth Ion Implantation for Silicon Based Light Emission: From Infrared to Ultraviolet V4.1/FF4.1
W. Skorupa, J.M. Sun, S. Prucnal , L. Rebohle, T. Gebel, A.N. Nazarov, I.N. Osiyuk, T. Dekorsy, and M. Helm
Characterization of Er/O-Doped Si-LEDs With Low Thermal Quenching V4.2/FF4.2
A. Karim, W.-X. Ni, A. Elfving, P.O.Å. Persson, and G.V. Hansson
Study of Optical Gain in Thick GaN Epilayers by Variable Stripe Length Technique V4.4/FF4.4
G. Tamulaitis, J. Mickevicius, M. Shur, Q. Fareed, and R. Gaska
Synthesis and Unprecedented Electro-Optic Response Properties of Twisted p-System Chromophores V4.5/FF4.5
Hu Kang, Antonio Facchetti, Hua Jiang, Peiwang Zhu, and Tobin J. Marks
Influence of Rapid Thermal Annealing on Self-Assembled Quantum-Dot Superluminescent Diodes V5.1/FF5.1
Z.Y. Zhang, Y.Y. Tsui, R. Fedosejevs, and Z.G. Wang
Highly Fluorinated Hybrid Glasses Doped With (Erbium-Ions/CdSe Nanoparticles) Designed for Advanced Laser Amplifiers V5.3/FF5.3
Kyung M. Choi and John A. Rogers
Fabrication of Er3+/Pr3+ Co-Doped Soda-lime Glass Thin Films Using RF Magnetron Sputtering Method and Optical Property Characterization V5.5/FF5.5
Sang-Hoon Shin, Sung-Dae Kim, Jong-Ha Moon, and Jin Hyeok Kim
Tm-Er Codoping Al2O3 Thin Films: Activation by Annealing V5.6/FF5.6
Zhisong Xiao, R. Serna, C. N. Afonso, and I. Vickridge
The Impact of Deposition Parameters on the Optical and Compositional Properties of Er Doped SRSO Thin Films Deposited by ECR-PECVD V5.7/FF5.7
Michael Flynn, Jacek Wojcik, Subhash Gujrathi, Edward Irving, and Peter Mascher
Luminescence of Rare Earth Doped Si/ZrO2 Co-Sputtered Films V5.8/FF5.8
C. Rozo, L.F. Fonseca, O. Resto, and S.Z. Weisz
Gallium Oxide as a Host for Rare Earth Elements V6.2
J.F. Muth, P. Gollakota, A. Dhawan, H.L. Porter, Y.N. Saripalli, and L.M. Lunardi
Erbium-Doped Amorphous- Si-C-O Matrix (a-SiCxOy:Er) ? A Novel Silicon-Based Material for Near-Infrared Optoelectronic Applications V6.5
Spyros Gallis, Mengbing Huang, Vasileios Nikas, Harry Efstathiadis, Eric Eisenbraun and Alain E. Kaloyeros
Hafnium-Related Photoluminescence in Single Crystal Silicon V6.6
R. Sachdeva, A.A. Istratov, Wei Shan, P.N.K. Deenapanray, and E.R. Weber
Lattice Location of Rare Earth Ions in Semiconductors: Interpretation and Limitations of Using g Values V6.7
David Carey
Nanocrystalline Rare Earth-doped Gallium Nitride Phosphor Powders V6.9
G.A. Hirata, J. Tao, P. Chen, K.C. Mishra, and J. McKittrick
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