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| Suggested format for citation of papers in this volume: |
| List all author names: Title of article, in Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices, edited by S. Ashok, J. Chevallier, B.L. Sopori, M. Tabe, and P. Kiesel (Mater. Res. Soc. Symp. Proc. 864, Warrendale, PA , 2005), insert paper number. |
Grown-In and Radiation-Induced Defects in 4H-SiC E1.2
T.A.G. Eberlein, R. Jones, P.R. Briddon, and S. Oberg
A Study of V3+ and the Vanadium Acceptor Level in Semi-Insulating 6H-SiC E1.3
Wonwoo Lee and Mary E. Zvanut
Role of the Substrate Doping in the Activation of Fe2+ Centers in Fe Implanted InP E1.5
T. Cesca, A. Gasparotto, G. Mattei, A. Verna, B. Fraboni, G. Impellizzeri, and F. Priolo
Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates E1.6
J. Mimila-Arroyo, J.F. Rommeluère, M. Barbé, F. Jomard, A. Tromson-Carli, O. Gorochov, Y. Marfaing, and P. Galtier
Pts-Oi Complex Formation in Platinum Diffused Silicon E2.3
Wilfried Vervisch, Laurent Ventura, Bernard Pichaud, Gérard Ducreux, and André Lhorte
Experimental Observation of Formation Processes in Si/SiO2 Interface Defects Using In-Situ UHV-ESR System E3.1
N. Mizuochi, W. Futako,and S. Yamasaki
Efficient Detection of Oxygen Vacancy Double Donors in Capacitors With Ultra-Thin Ta2O5 Films for DRAM Applications by Zero-Bias Thermally Stimulated Current Spectroscopy E3.2
W.S. Lau, L. Zhong, Taejoon Han, and Nathan P. Sandler
Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets E3.3
Homan B. Yuen, Robert Kudrawiec, K. Ryczko, S.R. Bank, M.A. Wistey, H.P. Bae, J. Misiewicz, and J.S. Harris Jr.
Ultra-Shallow Junctions for the 65nm Node Based on Defect and Stress Engineering E3.5
Victor Moroz, Majeed Foad, Houda Graoui, Faran Nouri, Dipu Pramanik, and Susan Felch
N+/P and P+/N Junctions in Strained Si on Strain Relaxed SiGe Buffers: The Effect of Defect Density and Layer Structure E3.7
G. Eneman, E. Simoen , R. Delhougne, P. Verheyen, M. Ries, R. Loo, M. Caymax, W. Vandervorst, and K. De Meyer
Morphology, Defects and Thermal Stability of SiGe Grown on SOI E3.8
Qianghua Xie, Mike Kottke, Xiangdong Wang, Mike Canonico, Ted White, Bich-Yen Nguyen, Alex Barr, Shawn Thomas, and Ran Liu
Characterization of Ultrathin Strained-Si Channel Layers of n-MOSFETs Using Transmission Electron Microscopy E3.9
Dalaver H. Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt, and Robert Hull
Chromium Diffusion Doping of Commercial ZnSe and CdTe Windows for Mid-Infrared Solid-State Laser Applications E4.1
U. Hömmerich, I.K. Jones, EiEi Nyein, and S.B. Trivedi
Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates E4.8
Chang-Soo Kim, Ji-Hyun Moon, Sang-Jun Lee, Sam-Kyu Noh, Je Won Kim, Kyuhan Lee, Yong Dae Choi, and Jay P. Song
Structural and Optical Properties of Thin Metal-Oxide Films (ZnO and SnOx) Deposited on Glass and Silicon Substrates E4.10
Serekbol Zh. Tokmoldin, Bulat N. Mukashev, Nurzhan B. Beisenkhanov, Azamat B. Aimagambetov, and Irina V. Ovcharenko
Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC E4.14
D.N. Zakharov, Z. Liliental-Weber, B. Wagner, Z.J. Reitmeier, E.A. Preble, and R.F. Davis
Defect Characterization of CdTe Bulk Crystals Doped With Heavy Elements and Rare Earths E4.18
Svetlana Neretina, N.V. Sochinskii, Peter Mascher, and E. Saucedo
Compositional Changes in the Infrared Optical Properties of Cr Doped CdZnTe Crystals E4.19
U. Hömmerich, A.G. Bluiett, EiEi Nyein, S.B. Trivedi, and R.T. Shah
Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications E4.22
W.S. Lau, G. Zhang, L.L. Leong, P.W. Qian, Taejoon Han, J. Das, Nathan P. Sandler, and P.K. Chu
Point Defects Interaction With Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties E4.24
D. Kropman, U. Abru, T. Kärner, U. Ugaste, E. Mellikov, M. Kauk, I. Heinmaa, and A. Samoson
Modeling the MOS Device Conductance Using an Extended Tunnelling Model and Subsequent Determination of Interface Traps E4.25
N. Konofaos
Solid Phase Recrystallization and Strain Relaxation in Ion-Implanted Strained Si on SiGe Heterostructures E4.28
M.S. Phen, R. T. Crosby, V. Craciun, K. S. Jones, M.E. Law, J.L. Hansen, and A.N. Larsen
Si3H8 Based Epitaxy of Biaxially Stressed Silicon Films Doped With Carbon and Arsenic for CMOS Applications E4.30
M. Bauer, S. Zollner, N.D. Theodore, M. Canonico, P. Tomasini, B.-Y. Nguyen, and C. Arena
Transmission Electron Microscopy Studies of Strained Si CMOS E4.31
Qianghua Xie, Peter Fejes, Mike Kottke, Xiangdong Wang, Mike Canonico, David Theodore, Ted White, Mariam Sadaka, Victor Vartanian, Aaron Thean, Bich-Yen Nguyen, Alex Barr, Shawn Thomas, and Ran Liu
Device Parametric Shift Mechanism Caused by Boron Halo Redistribution Resulting From Dose Rate Dependence of SDE Implant E4.32
Ukyo Jeong, Jinning Liu, Baonian Guo, Kyuha Shim, and Sandeep Mehta
Impact of Small Miscuts of (0001) Sapphire on the Growth of AlxGa1-xN/AlN E4.34
Zheng Gong, Wenhong Sun, Jianping Zhang, Mikhail E. Gaevski, Hongmei Wang, Jinwei Yang, and M. Asif Khan
Radiative Versus Nonradiative Decay Processes in Germanium Nanocrystals Probed by Time-Resolved Photoluminescence Spectroscopy E4.36
P.K. Giri, R. Kesavamoorthy, B.K. Panigrahi, and K.G.M. Nair
Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN E4.37
Bentao Cui and P.I. Cohen
Elastic Stress Relaxation at Nanoscale: A Comprehensive Theoretical and Experimental Investigation of the Dislocation Loops Associated With As-Sb Nanoclusters in GaAs E4.38
V.V. Chaldyshev, A.L. Kolesnikova, N.A. Bert, and A.E. Romanov
Infrared Spectroscopy of Impurities in ZnO Nanoparticles E4.40
W.M. Hlaing Oo and M.D. McCluskey
Electrical Transient Based Defect Spectroscopy in Polymeric and Organic Semiconductors E5.1
Y.N. Mohapatra, V. Varshney, V. Rao, Samarendra P. Singh, and G.S. Samal
Towards the Routine Fabrication of P in Si Nanostructures: Understanding P Precursor Molecules on Si(001) E5.4
Steven R. Schofield, Neil J. Curson, OliverWarschkow, Nigel A. Marks, Hugh F. Wilson, Michelle Y. Simmons, Phillip V. Smith, Marian W. Radny, and David R. McKenzie
Effect of Ohmic Contacts on Polysilicon Memory Effect E5.6
S.B. Herner, C. Jahn, and D. Kidwell
Analysis of Nanoscale Deformation in GaAs(100): Towards Patterned Growth of Quantum Dots E5.7
Curtis R. Taylor, Eric A. Stach, Ajay P. Malshe, and Gregory Salamo
Electronically Stimulated Degradation of Crystalline Silicon Solar Cells E6.1
J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones, and D.W. Palmer
Efficiency Limitations of Multicrystalline Silicon Solar Cells Due to Defect Clusters E6.2
Bhushan Sopori, Chuan Li, S. Narayanan, and D. Carlson
Silicon Wafer Defect Self-Characterization With CCD Image Sensors E6.3
William C. McColgin, Alexa M. Perry, Dean J. Seidler, and James P. Lavine
Silicon Light Emissions from Boron Implant-Induced Extended Defects E6.4
G.Z. Pan, R.P. Ostroumov, L.P. Ren, Y.G. Lian, and K.L. Wang
Conductivity Enhancement in Thin Silicon-on-Insulator Layer Embedding Artificial Dislocation Network E6.5
Yasuhiko Ishikawa, Kazuaki Yamauchi, Chihiro Yamamoto, and Michiharu Tabe
Silicon Single-Electron Pump and Turnstile: Interplay With Crystalline Imperfections E6.7
Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, and Hiroshi Inokawa
A Comparison of Lattice-Matched GaInNAs and Metamorphic InGaAs Photodetector Devices E6.9
David B. Jackrel, Homan B. Yuen, Seth R. Bank, Mark A. Wistey, Xiaojun Yu, Junxian Fu, Zhilong Rao, and James S. Harris Jr.
A Novel Method to Synthesize Blue-Luminescent Doped GaN Powders E6.10
R. Garcia, A. Thomas, A. Bell, and F.A. Ponce
Low Temperature B Activation in SOI Using Optimised Vacancy Engineering Implants E7.1
A.J. Smith, B. Colombeau, N. Bennett, R. Gwilliam, N. Cowern, and B. Sealy
Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide E7.3
E. Ntsoenzok, H. Assaf, and M.O. Ruault
Defects Induced by Helium Implantation: Impact on Boron Diffusivity E7.4
F. Cayrel, D. Alquier, C. Dubois, and R. Jerisian
Roles of Impurities and Implantation Depth on He+- Cavity Shape in Silicon E7.5
Gabrielle Regula, Rachid El Bouayadi, Maryse Lancin, Esidor Ntsoenzok, Bernard Pichaud, and Marie-Odile Ruault
Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-ray Absorption Spectroscopy E7.8
M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, C.A. King, Y.S. Suh, R.A. Levy, Temel Buyuklimanli, Mark Croft
Electronic and Optical Properties of Energetic Particle-Irradiated In-Rich InGaN E7.10
S.X. Li, K.M. Yu, R.E. Jones, J. Wu, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, Hai Lu, William J. Schaff, and W. Kemp
Controlled Growth of ZnO Films on Si Substrate and N-Doping Behavior E7.11
Y.F. Mei, Ricky K.Y. Fu, R.S. Wang, K.W. Wong, H.C. Ong, L. Ding, W.K. Ge, G.G. Siu, and Paul K. Chu
Mutual Passivation in Dilute GaNxAs1-x Alloys E8.1
K.M. Yu, W. Walukiewicz, J. Wu, D.E. Mars, M.A. Scarpulla, O.D. Dubon, M.C. Ridgway, and J.F. Geisz
Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials Using Isotopically Enriched Single-or Multi-30Si Epitaxial Layers E8.4
S. Matsumoto, S.R. Aid, T. Sakaguchi, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada, and T. Abe
Role of Interstitials in As TED and Clustering in Crystalline Silicon E8.5
Scott A. Harrison, Thomas F. Edgar, and Gyeong S. Hwang
Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors E8.6
D. Benoit, P. Morin, M. Cohen, P. Bulkin, and J.L. Regolini
Diffusion of Fluorine-Silicon Interstitial Complex in Crystalline Silicon E9.1
Scott A. Harrison, Thomas F. Edgar, and Gyeong S. Hwang
A New Post Annealing Method for AlGaN/GaN Heterostructure Field-Effect Transistors Employing XeCl Excimer Laser Pulses E9.2
Min-Woo Ha, Seung-Chul Lee, Joong-Hyun Park, Kwang-Seok Seo, and Min-Koo Han
Fabrication of Silicon Carbide PIN Diodes by Laser Doping and Planar Edge Termination by Laser Metallization E9.3
Z. Tian, N.R. Quick, and A. Kar
Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures E9.4
H. Khlyap, P. Sydorchuk, and P. Sydorchuk
Thermal Growth of He-Cavities in Si Studied by Cascade Implantation E9.7
E. Ntsoenzok, R. El Bouayadi, G. Regula, B. Pichaud, S. Ashok
Blistering and Splitting in Hydrogen-Implanted Silicon E9.8
E. Ntsoenzok , H. Assaf, and S. Ashok
The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation E9.9
Min Yu, Xiao Zhang, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang, and Hideki Oka
The Electrical Phenomena of Non-Planar Structure and Devices Using Plasma Doping E9.15
Jong-Heon Yang, In-Bok Baek, Kiju Im, Chang-Geun Ahn, Sungkweon Baek, Won-ju Cho, and Seongjae Lee
Theoretical Investigation of Formation of (n-n+)-Junction in Ion-Implanted Crystalline Matrix E9.16
R. Peleshchak, O. Kuzyk, and H. Khlyap
Barrier to Migration of the Intrinsic Defects in Silicon in Different Charged System Using First-Principles Calculations E9.17
Jinyu Zhang, Yoshio Ashizawa, and Hideki Oka
Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers E9.18
Q. Wang, Manmohan Daggubati, Hossein Paravi, Rong Yu, and Xiao Feng Zhang
Influence of Oxygen Vacancies and Strain on Electronic Reliability of SiO2-x Films E9.19
Ken Suzuki, Yuta Ito, Hideo Miura, and Tetsuo Shoji
General Model of Diffusion of Interstitial Oxygen in Silicon and Germanium Crystals E9.20
Vasilii Gusakov
Contact Free Defect Investigation in As Grown Fe-Doped SI-InP E9.21
Sabrina Hahn, Kay Dornich, Torsten Hahn, Bianca Gründig-Wendrock, Jürgen R. Niklas, Peter Schwesig, and Georg Müller
Ab Initio Studies of Electronic Structure of Defects in PbTe E9.23
Salameh Ahmad, Daniel Bilc, S.D. Mahanti, and M.G. Kanatzidis
µ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process E9.25
W. Düngen, R. Job, Y. Ma, Y. L. Huang, W.R. Fahrner, L.O. Keller, and J.T. Horstmann
P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon E9.26
Y.L. Huang, E. Simoen , R. Job , C. Claeys, W. Düngen, Y. Ma, W. R. Fahrner, J. Versluys, and P. Clauws
Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes E9.27
F. Kail, A. Hadjadj, and P. Roca i Cabarrocas
Mechanism of Dopant Activation Enhancement in Shallow Junctions by Hydrogen E9.28
A. Vengurlekar, S. Ashok , Christine E. Kalnas, and Win Ye
Hydrogen Ion Implantation Caused Defect Structures in Heavily Doped Silicon Substrates E9.29
Minhua Li and Q. Wang
Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures E9.31
Jaime Mimila Arroyo, Michel Barbé, François Jomard, Dominique Ballutaud, and Jacques Chevallier
Effect of Substrate Orientation on the Growth Rate and Surface Morphology on GaSb Grown by Metal-Organic Vapor Phase Epitaxy E9.33
Jian Yu and Ishwara B. Bhat
Photoelectron Emission Technique for the Surface Analysis of Silicon Wafer Covered With Oxide Film E9.34
Takao Sakurai, Yoshihiro Momose, Masanori Kudou, and Keiji Nakayama
Identification and Characterization of Submicron Defects for Semiconductor Processing E9.35
Wei Liu, Aime Fausz, John Svoboda, Brian Butcher, Rick Williams, and Steve Schauer
Thermal Transformation of Hydrogen Bonds in a-SiC:H Films: Structural and Optical Properties E9.37
Andrey V. Vasin, Sergey P. Kolesnik, Andrey A. Konchits, Vladimir S. Lysenko, Alexey N. Nazarov, Andrey V. Rusavsky, and S. Ashok
Probing Process-Induced Defects in Si Using Infrared Photoelastic Stress Measurement Technique E9.38
X.H. Liu, S.P. Wong, H.J. Peng, N. Ke, and Shounan Zhao
Defect Reduction in Si-Based Metal-Semiconductor-Metal Photodetectors With Cryogenic Processed Schottky Contacts E9.39
M. Li, and W.A. Anderson
Optical and Electrical Characterization of Quantum Dot Infrared Photodetector Structure Treated With Hydrogen-Plasma E9.40
H.D. Nam, J.D. Song, W.J. Choi, J.I. Lee, and H.S. Yang
Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon E10.2
R. Job, W. Düngen, Y. Ma, Y.L. Huang, and J.T. Horstmann
Hydrogen Donors in ZnO E10.4
M.D. McCluskey, S.J. Jokela, and W.M. Hlaing Oo
Three Dimensional Hydrogen Microscopy in Diamond E11.1
Günther Dollinger, Patrick Reichart, Andreas Bergmaier Andreas Hauptner, and Christoph Wild
Nondestructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers E11.2
K. Dornich, T. Hahn, and J.R. Niklas
A Pulsed EDMR Study of Charge Trapping at Pb Centers E11.3
Christoph Boehme, Felice Friedrich, and Klaus Lips
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