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| Suggested format for citation of papers in this volume: |
| List all author names: Title of article, in Materials, Technology and Reliability of Advanced Interconnects—2005, edited by Paul R. Besser, Andrew J. McKerrow, Francesca Iacopi, C.P. Wong, and Joost Vlassak (Mater. Res. Soc. Symp. Proc. 863, Warrendale, PA , 2005), insert paper number. |
A New Technique for the Characterization of the Adhesion in Integrated Circuit Interconnect Structures B1.2
Ibon Ocana, Jon M. Molina, Diego Gonzalez, M. Reyes Elizalde, Jose M. Sanchez, Jose M. Martinez-Esnaola, Javier Gil-Sevillano, Tracey Scherban, Daniel Pantuso, Brad Sun, Guanghai Xu, Barbara Miner, Jun He, and Jose A. Maiz
Mechanical Properties of Porous MSQ Films: Impact of the Porogen Loading and Matrix Crosslinking B1.4
F. Ciaramella, V. Jousseaume, S. Maitrejean , B. Rémiat, M. Verdier, and G. Passemard
High-Temperature Nanoindentation Measurement for Hardness and Modulus Evaluation of Low-k Films B1.5
Jiping Ye, Nobuo Kojima, Satoshi Shimizu, and James M. Burkstrand
Depth-Profiling Pore Morphology in Nanoporous Thin Films Using Positronium Lifetime Annihilation Spectroscopy B1.6
Richard S. Vallery, Hua-Gen Peng, William E. Frieze, David W. Gidley, Darren L. Moore, and Richard J. Carter
Solid State MAS NMR Spectroscopic Characterization of Plasma Damage and UV Modification of Low-k Dielectric Films B1.8
Thomas Abell, Kristof Houthoofd, Francesca Iacopi, Piet Grobet, and Karen Maex
Nanoporous Materials Integration Into Advanced Microprocessors B2.1
E. Todd Ryan, Cathy Labelle, Satya Nitta, Nicholas C.M. Fuller, Griselda Bonilla, Kenneth McCullough, Charles Taft, Hong Lin, Andrew Simon, Eva Simonyi, Kelly Malone, Muthumanickam Sankarapandian, Derren Dunn, Mary Ann Zaitz, Steve Cohen, Nancy Klymko, Bum Ki Moon, Zijian Li, Shuang Li, Yushan Yan, Junjun Liu, and Paul S. Ho
Double-Layered Structure of Surface Modification of Low-k Dielectrics Induced by He Plasma B2.3
Ken-ichi Yanai, Tadayoshi Hasebe, Kouji Sumiya, Seiki Oguni, and Kazuhiro Koga
Nanoscale Observation Of Dielectric Damage To Low-k MSQ Interconnects From Reactive Ion Etching and Ash Treatment B2.4
Todd S. Gross, Shaoning Yao, and Sri Satyanarayana
First Pass Study of Surface Modified Porous Low-k by Ion Implantation for Zero Thickness Barrier Requirement of Cu/MSQ/Si Stacks in Copper Metallization Scheme B2.6
Alok Nandini U. Roy, Zubin P. Patel, and H. Bakhru
Observation of Intrusion Rates of Hexamethyldisilazane During Supercritical Carbon Dioxide Functionalization of Triethoxyfluorosilane Low-k Films B2.7
P.M.Capani, P.D. Matz, D.W. Mueller, M.J. Kim, E.R. Walter, J.T. Rhoad, E.L. Busch, R.F. Reidy
Poly(ethynyl-p-xylylene), An Advanced Molecular Caulk CVD Polymer B2.10
Brad P. Carrow, Rex E. Murray, Benjamin W. Woods, and Jay J. Senkevich
Integration of a Polymer Etch Stop Layer in a Porous Low-k MLM Structure B2.11
Gregory C. Smith, Neil Henis, Richard McGowan, Brian White, Matthias Kraatz, Sri Satyanarayana, Sharath Hosali, Youfan Liu, and Klaus Pfeifer
Pore Structure and Integration Performance of a Porous CVD Ultra Low-k Dielectric B3.1
Youfan Liu, Andreas Knorr, Wen-Li Wu, David Gidley, and Bernd Kastenmeier
Ultra Low-k PECVD Porogen Approach: Matrix Precursors Comparison and Porogen Removal Treatment Study B3.2
L. Favennec, V. Jousseaume, V. Rouessac, J. Durand, and G. Passemard
Determining Pore Structure and Growth Mechanisms in Templated Nanoporous Low-k Films B3.4
Hua-Gen Peng, Richard S. Vallery, Ming Liu, William E. Frieze, David W. Gidley, Jin-Heong Yim, Hyun-Dam Jeong ,and Jongmin Kim
Fracture Property Improvements of a Nanoporous Thin Film Via Post Deposition Bond Modifications B3.8
Jeannette M. Jacques, Ting Y. Tsui, Andrew J. McKerrow, and Robert Kraft
Effect of Plasma Treatment and TMCTS Vapor Annealing on the Reinforcement of Porous Low-k Films B3.10
Kazuo Kohmura, Hirofumi Tanaka, Shunsuke Oike, Masami Murakami, Tetsuo Ono, Yutaka Seino, and Takamaro Kikkawa
High Strength Low Dielectric Constant Aromatic Thermosets B3.11
Yongqing Huang and James Economy
Constraint Effects on Cohesive Failures in Low-k Dielectric Thin Films B4.1
Ting Y. Tsui, Andrew J. McKerrow, and Joost J. Vlassak
Barrier Integrity Effect on Leakage Mechanism and Dielectric Reliability of Copper/OSG Interconnects B4.4
Yunlong Li, Zsolt Tökei, Tushar Mandrekar, Bencherki Mebarki, Guido Groeseneken, and Karen Maex
Structure Evolution in Plated Cu Films B5.2
D.P. Field , N.J. Park, P.R. Besser, and J.E. Sanchez Jr.
Effect of Temperature on Incubation Time for Spontaneous Morphology Change in Electrodeposited Copper Metallization B5.4
S. Ahmed, D.N. Buckley, S. Nakahara, and Y. Kuo
Plasma-Assisted Atomic Layer Deposition of TiN Films at Low Deposition Temperature for High-Aspect Ratio Applications B6.4
S.B.S. Heil, E. Langereis, F. Roozeboom, A. Kemmere2, N.P. Pham, P.M. Sarro, M.C.M. van de Sanden, and W.M.M. Kessels
Integration of ALD-TaN Liners on Nanoporous Dielectrics B6.5
Bum Ki Moon, Tadashi Iijima, Sandra Malhotra, Andrew Simon, Thomas Shaw, E. Todd Ryan, Cathy Labelle, Nick Fuller, Tibor Bolom, Derren Dunn, Philip Flaitz, Sanjay Mehta, Keishi Inoue, and Vincent McGahay
Effect of Dielectric Pore Size Distribution on Interfacial Adhesion of the Tantalum-Porous Dielectric Interface B6.6
R. Saxena, W. Cho, O. Rodriguez, W.N. Gill, J.L. Plawsky, T. Tsui, and S. Grunow
CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-k Interlayer Dielectrics B6.8
P. Ryan Fitzpatrick, Sri Satyanarayana, Yangming Sun, John M. White, and John G. Ekerdt
Thermal Oxidation of Cu Interconnects Capped With CoWP B6.11
J. Gambino, S. Smith, S. Mongeon , D. Meatyard, F. Chen, and P. DeHaven
TEM-Based Analysis of Defects Induced by AC Thermomechanical versus Microtensile Deformation in Aluminum Thin Films B7.2/O11.2
R.H. Geiss, R.R. Keller, D.T. Read, and Y.-W. Cheng
Employing Thin Film Failure Mechanisms to Form Templates for Nano-Electronics B7.3/O11.3
Rainer Adelung, Mady Elbahri, Shiva Kumar Rudra, Abhijit Biswas, Seid Jebril, Rainer Kunz, Sebastian Wille, and Michael Scharnberg
Degradation of Fracture and Fatigue Properties of MEMS Structures Under Cyclic Loading B7.4/O11.4
Jong-jin Kim and Dongil Kwon
Effect of Microstructure and Dielectric Materials on Stress-Induced Damages in Damascene Cu/Low-k Interconnects B7.6/O11.6
Young-Chang Joo, Jong-Min Paik and Jung-Kyu Jung
Comparison of Line Stress Predictions With Measured Electromigration Failure Times B7.7/O11.7
Rao R. Morusupalli, William D. Nix, Jamshed R. Patel, and Arief S. Budiman
Stress-Induced Void Formation in Passivated Cu Films B7.8/O11.8
Dongwen Gan, Bin Li, and Paul S. Ho
Stress Generation in PECVD Silicon Nitride Thin Films for Microelectronics Applications B7.9/O11.9
M. Belyansky, N. Klymko, A. Madan, A. Mallikarjunan, Y. Li, A. Chakravarti, S. Deshpande, A. Domenicucci, S. Bedell, E. Adams, J. Coffin, L. Tai, S-P. Sun, J. Widodo, and C-W Lai
A Novel Organic Low-k Film Deposited by Plasma-Enhanced Co-Polymerization B8.1
Nobutaka Kunimi, Jun Kawahara, Keizo Kinoshita, Akinori Nakano, Masashi Komatsu, and Takamaro Kikkawa
Mesoporous Low Dielectric Poly(silsesquioxane) Thin Films Templated by Various Surfactants B8.4
Jingyu Hyeon-Lee, Jong-Baek Seon, Myungsup Jung, and Jongmin Kim
A Spin-on Dielectric Material for High Aspect Ratio Gap Fill B8.5
Wei Chen, Sheng Wang, Ather Ashraf, Edward Somerville, Gerard Nowaczyk, B.K. Hwang, J.K. Lee, Eric S. Moyer, Carlo Waldfried, Orlando Escocia, and Qingyuan Han
New Carbon-Bridged Hybrid Polymers for Low-k Materials B8.10
Bum-Gyu Choi, Byung Ro Kim, Myung-Sun Moon, Jung-Won Kang, and Min-Jin Ko
The Effect of Methylating Treatments on the Dielectric Reliability of Low-k/Cu Structures B8.12
Swarnal Borthakur, Sri Satyanarayana, Andreas Knorr, and Paul S. Ho
Capacitance Measurement Technique for Determining the Out-of-Plane Coefficient of Thermal Expansion for Low-k Dielectrics B8.14
Swarnal Borthakur, Andreas Knorr, Paul S. Ho, and Wen-Li Wu
Determination of Elastic Modulus and Yield Stress of Ultra-Thin Cu and Low-k Films Using Spherical Nanoindentation Measurement B8.15
Satoshi Shimizu, Nobuo Kojima, and Jiping Ye
Application of Nanoindentation to Characterize Fracture in ILD Films Used in the BEOL B8.18
Eva E. Simonyi, E. Liniger , M. Lane, Q. Lin, C. D. Dimitrakopoulos, and C. Tyberg
Advanced Al Damascene Process for Fine Trench Under 70 nm Design Rule B8.23
Sung Ho Han, Kyung-in Choi, Sera Yun, Jeong Heon Park, Won Sok Lee, Sang Woo Lee, Gil Heyun Choi, Change Kee Hong, Sung Tae Kim, Uin Chung, Joo Tae Moon, and Byung-Il Ryu
Modeling the Impact of Packaging Stress on Device Performance B8.25
Xiaopeng Xu and Victor Moroz
Material Reliability and Integration Issues of Polyimide and Benzocyclobutene Interlayer Dielectric Materials B8.26
Parshuram B. Zantye, Ashok Kumar, R. Gopalkrishnan, and S. Balakumar
Analysis of the Interfacial Reaction between Sn-3.5Ag and Electroplating Interlayers B8.29
S.M. Yang, Y.Y. Chang, and Weite Wu
Electromigration of Electroplated Gold Interconnects B8.30
Steve Kilgore, Craig Gaw, Haldane Henry, Darrell Hill, and Dieter Schroder
Fundamentals of Cu/Barrier-Layer Adhesion in Microelectronic Processing B9.2
Harsono Simka, Sadasivan Shankar, Carolyn Duran, and Michael Haverty
Effect of Current Direction on the Reliability of Different Capped Cu Interconnects B9.3
C.L. Gan, C.Y. Lee, C.K. Cheng, and J. Gambino
Multi-Via Electromigration Test Structures for Identification and Characterization of Different Failure Mechanisms B9.4
Z.-S. Choi, C.W. Chang, J.H. Lee, C.L. Gan, C.V. Thompson, K.L. Pey, and W.K. Choi
Microstructure Evolution During Electric Current Induced Thermomechanical Fatigue of Interconnects B9.5
Robert R. Keller, Roy H. Geiss, Yi-wen Cheng, and David T. Read
Characterization of Temporary Extrusion Failures in Quarter-Micron Copper Interconnects B9.7
Yan Zhang, Junho Choy, Glenn H. Chapman, and Karen L. Kavanagh
Analysis of Electromigration-Induced Void Motion and Surface Oscillations in Metallic Thin-Film Interconnects B9.8
Jaeseol Cho, M. Rauf Gungor, and Dimitrios Maroudas
The Effect of Immersion Sn Coating on the Electromigration Failure Mechanism and Lifetimes of Cu Dual Damascene Interconnects B9.9
Minyu Yan, King-Ning Tu, Anand V. Vairagar, Subodh G. Mhaisalkar, and Ahila Krishnamoorthy
Synchrotron X-ray Micro-Diffraction Analysis on Microstructure Evolution in Sn Under Electromigration B9.10
Albert T. Wu, N. Tamura, J. R. Lloyd, C. R. Kao, and K.N. Tu
Flip Chip Reliability of GaAs on Si Thin Film Substrates Using AuSn Solder Bumps B10.1
Hermann Oppermann, Matthias Hutter, Matthias Klein, Gunter Engelmann, Michael Toepper, and Jürgen Wolf
Effect of Electromigration on Mechanical Behavior of Solder Joints B10.2
Fei Ren, Jae-Woong Nah, Hua Gan, Jong-ook Suh, King-Ning Tu, Bingshou Xiong, Luhua Xu, and John Pang
Morphology Change, Size Distribution, and Nano-Sized Channels in Cu6Sn5 Intermetallic Compound Formation at the SnPb Solder and Copper Interface B10.3
J.O. Suh, K.N. Tu, and A.M. Gusak
A Study of Impact Reliability of Lead-Free BGA Balls on Au/Electrolytic Ni/Cu Bond Pad B10.5
Shengquan Ou, Yuhuan Xu, K.N. Tu, M.O. Alam, and Y.C. Chan
Mechanisms of Low-Temperature Ti/Si-Based Wafer Bonding B10.7
Jian Yu, Yinmin Wang, Arthur W. Haberl, Hassa Bakhru, Jian-Qiang Lu, and Ronald J. Gutmann
Effects of Bonding Process Parameters on Wafer-to-Wafer Alignment Accuracy in Benzocyclobutene (BCB) Dielectric Wafer Bonding B10.8
F. Niklaus, R.J. Kumar, J.J. McMahon, J. Yu, T. Matthias, M. Wimplinger, P. Lindner, J.-Q. Lu, T.S. Cale, and R.J. Gutmann
Interconnects for Elastically Stretchable and Deformable Electronic Surfaces B10.9
Joyelle Jones, S.P. Lacour, and Sigurd Wagner
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