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| List all author names: Title of article, in Amorphous and Nanocrystalline Silicon Science and Technology—2005, edited by Robert W. Collins, P. Craig Taylor, Michio Kondo, Reinhard Carius, and Rana Biswas (Mater. Res. Soc. Symp. Proc. 862, Warrendale, PA , 2005), insert paper number. |
Urbach Edge, Disorder, and Absorption On-Set in a-Si:H A1.3
G.D. Cody
A Phase Diagram of Low Temperature Epitaxial Silicon Grown by Hot-Wire Chemical Vapor Deposition for Photovoltaic Devices A2.1
Christine Esber Richardson, Brendan M. Kayes, Matthew J. Dicken, and Harry A. Atwater
Suppression of Nucleation During the Aluminum-Induced Layer Exchange Process A2.2
Jens Schneider, Juliane Klein, Andrey Sarikov, Martin Muske, Stefan Gall, and Walther Fuhs
Silicon Homoepitaxy Using Tantalum-Filament Hot-Wire Chemical Vapor Deposition A2.3
Charles W. Teplin, Eugene Iwaniczko, Kim M. Jones, Robert Reedy, Bobby To, and Howard M. Branz
Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films A2.4
B.S. So, Y.H. You, H.J. Kim, Y.H. Kim, J.H. Hwang, D.H. Shin, S.R. Ryu, K. Choi, and Y.C. Kim
Formation of a Miscibility Gap in Laser-Crystallized Poly-SiGe Thin Films A2.5
M. Weizman , N.H. Nickel, I. Sieber, and B. Yan
Ge Growth on Nanostructured Silicon Surfaces A2.6
Ganesh Vanamu, Abhaya K. Datye, and Saleem H. Zaidi
The Role of SiH3 Diffusion in Determining the Surface Smoothness of Plasma-Deposited Amorphous Si Thin Films: An Atomic-Scale Analysis A3.2
Mayur S. Valipa, Tamas Bakos, Eray S. Aydil, and Dimitrios Maroudas
Initial Stage Hydrogen Movement and IR Absorption Proportionality Constants In Hot-Wire Deposited SiN1.2:H During High-Temperature Annealing A3.4
H.D. Goldbach, V. Verlaan, C.H.M. van der Werf, W.M. Arnoldbik, H.C. Rieffe, I.G. Romijn, A.W. Weeber, and R.E.I. Schropp
Conductance Fluctuations in Amorphous Silicon Nanoparticles A4.1
T.J. Belich, Z. Shen, C. Blackwell, S.A. Campbell2, and J. Kakalios
High-Yield Synthesis of Luminescent Silicon Quantum Dots in a Continuous Flow Nonthermal Plasma Reactor A4.3
L. Mangolini, E. Thimsen, and U. Kortshagen
Wiring and Introduction of Single Silicon Nanocrystals Into Multi-Walled Carbon Nanotubes A4.5
Vladimir Švrcek, Francois Le Normand, Ovidui Ersen, Coung Pham-Huu, Dominique Begin, Benoit Louis, and Marc-Jaques Ledoux
Metastable Changes in the Photoconductive Properties of Microcrystalline Silicon Upon Heat Treatment A5.1
R. Brüggemann
Effects of Post Annealing and Material Stability on Undoped and n+ nc-Si:H Films Deposited at 75°C Using 13.56 MHz PECVD A5.4
Czang-Ho Lee, Andrei Sazonov, and Arokia Nathan
Transport and Meyer-Neldel Rule in Microcrystalline Silicon Films A5.6
Steve Reynolds, Vlad Smirnov, Friedhelm Finger, Charlie Main, and Reinhard Carius
Characterization of Silicon Thin Film Deposited by E-Beam Evaporator for Flexible Display A5.8
In-Hyuk Song, Sang-Myeon Han, Jung-Hyun Park , and Min-Koo Han
Correlation of In and Ex Situ Stress to Microstructures During Al-Induced Crystallization of PECVD Amorphous Silicon A6.1
S. Ray, Y.G. Lian, V. Sriram, D.J. Tucker, and G.Z. Pan
Micro-Crystalline Silicon-Germanium Thin Films Prepared by the Multi-Target RF Sputtering System A6.2
Toru Ajiki, Isao Nakamura, and Masao Isomura
Poly-Crystalline Ge Thin Films Prepared by RF Sputtering Method for Thermo Photo Voltaic Application A6.5
Daisuke Hoshi, Isao Nakamura, and Masao Isomura
TCAD Modeling of Metal Induced Lateral Crystallization of Amorphous Silicon A6.6
Aleksey M. Agapov, Valeri V. Kalinin, Alexandre M. Myasnikov, Vincent M.C. Poon, and Bert Vermeire
Electron Field Emission From SiC/Si Heterostructures Formed by Carbon Implantation Into Silicon and Etching of the Top Silicon Layer A6.7
Yumei Xing, Jihua Zhang, Yuehui Yu, Zhaorui Song, and Dashen Shen
Excimer Laser Crystallized HWCVD Thin Silicon Films: Electron Field Emission A6.8
M.Z. Shaikh, K.A. O'Neill, S.K. Persheyev, and M.J. Rose
GaAs Growth on Micro and Nano Patterned Ge/Si1-xGex and Si Surfaces A6.9
Ganesh Vanamu, Abhaya K. Datye, Ralph L. Dawson, and Saleem H. Zaidi
Light-Intensity Dependence of the Staebler-Wronski Effect in a-Si:H With Various Densities of Defects A7.1
Minoru Kumeda, Ryohei Sakai, Akiharu Morimoto, and Tatsuo Shimizu
Electronic Properties of Improved Amorphous Silicon-Germanium Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor Deposition Process A7.2
Shouvik Datta, J. David Cohen, Yueqin Xu, and A.H. Mahan
Experimental Study of Silane Plasma Nanoparticle Formation in Amorphous Silicon Thin Films A8.1
S. Thompson, C.R. Perrey, T.J. Belich, C. Blackwell, C.B. Carter, J. Kakalios, and U. Kortshagen
Study of the Oxidation of Polycrystalline SiGe: Formation of Ge Nanocrystals and Their Related Luminescence A8.3
A.C. Prieto, M. Avella, J. Jiménez, A. Rodríguez, J. Sangrador, T. Rodríguez, and A. Kling
Fabrication of One-Dimensional Silicon Nano-Wires Based on Proximity Effects of Electron-Beam Lithography A8.6
S.F. Hu and C.L. Sung
Charging Effect of a nc-Si in a SiO2 Layer Observed by Scanning Probe Microscopy A8.7
J.M. Son, J.M. Kim, Y. Khang, E.H. Lee, S.I. Park, Y.S. Kim, and C.J. Kang
Formation of Antimony 1D-Nanostructures on Si (5 5 12) Surface A8.8
S.M. Shivaprasad, Mahesh Kumar, Amish G. Joshi, and Vinod Kumar Paliwal
Fabrication of Silicon Nanowire Network in Aluminum Thin Films A8.9
Vincent H. Liu, Husam H. Abu-Safe, Hameed A. Naseem, and William D. Brown
Electrodeposition of Fluorescent Si Nanomaterial From Acidic Sodium Silicate Solutions A8.10
Laila H. Abuhassan and Munir H. Nayfeh
Hot-Mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2 A8.11
Kanji Yasui, Jyunpei Eto, Yuzuru Narita, Masasuke Takata, and Tadashi Akahane
Advances in Amorphous Silicon Integrated Photonics Science and Technology A9.1
G.P. Halada, Samrat Chawda, J. Mawyin, R.J. Tonucci, A.H. Mahan, and C.M. Fortmann
Spectral Sensitivity and Color Selectivity in Multilayer Stacked Devices A9.2
P. Louro, M. Vieira, A. Fantoni, M. Fernandes, G. Lavareda, and C. Nunes de Carvalho
Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes A9.3
R. Brüggemann, M. Rösch, S. Tardon, and G.H. Bauer
Two-Dimensional a-Si:H/a-SiC:H n-i-p Sensor Array With ITO/a-SiNx Antireflection Coating A9.4
Yu. Vygranenko, J. H. Chang, and A. Nathan
Amorphous Silicon Based p-i-i-n Structure for Color Sensor A9.5
S. Zhang, L. Raniero, E. Fortunato, L.Pereira, H. Águas, I. Ferreira, and R. Martins
Effect of the Hydrogen Content in the Optical Properties and Etching of Silicon Nitride Films Deposited by PECVD for Uncooled Microbolometers A9.6
R. Ambrosio, A. Torres, A. Kosarev, M. Landa, and A. Heredia
Photoluminescence and Electroluminescence Properties of FeSi2-Si Structures Formed by MEVVA Implantation A9.7
C.F. Chow, Y. Gao, S.P. Wong, N. Ke, Q. Li, W.Y. Cheung, G. Shao, M.A. Lourenco, and K.P. Homewood
Comparison of the Effect of Light Soaking in Porous Silicon and a-Si:H A9.8
N.P. Mandal and S.C. Agarwal
Nanocrystalline Germanium and Germanium Carbide Films and Devices A10.2
Xuejun Niu, Jeremy Booher, and Vikram L. Dalal
Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by VHF PECVD A10.3
A. Gordijn, J. Francke, L. Hodakova, J.K. Rath, and R.E.I. Schropp
'Seed Layers' for the Preparation of Hydrogenated Microcrystalline Silicon With Defined Structural Properties on Glass A10.4
Christoph Ross, Yaohua Mai, Reinhard Carius, and Friedhelm Finger
Solid Phase Crystallization of Hot-Wire CVD Amorphous Silicon Films A10.5
David L. Young, Paul Stradins, Eugene Iwaniczko, Bobby To, Bob Reedy, Yanfa Yan, Howard M. Branz, John Lohr, Manuel Alvarez, John Booske, Amy Marconnet, and Qi Wang
Low Substrate Temperature Deposition of Crystalline SiC Using HWCVD A10.6
S. Klein, R. Carius, L. Houben, and F. Finger
Improved Stability of Hydrogenated Amorphous Silicon Solar Cells Fabricated by Triode-Plasma CVD A11.1
H. Sonobe, A. Sato, T. Fujibayashi, S. Shimizu , T. Matsui, A. Matsuda, and M. Kondo
Highly and Rapidly Stabilized Protocrystalline Silicon Multilayer Solar Cells A11.2
Koeng Su Lim, Joong Hwan Kwak, Seong Won Kwon, and Seung Yeop Myong
Correlation Between Powder in the Plasma and Stability of High Rate Deposited a-Si:H A11.3
Guozhen Yue, Gautam Ganguly, Baojie Yan, Jeffrey Yang, and Subhendu Guha
The Nature of Native and Light Induced Defect States in i-Layers of High Quality a-Si:H Solar Cells Derived From Dark Forward-Bias Current-Voltage Characteristics A11.4
J. Deng, M.L. Albert, J.M. Pearce, R.W. Collins, and C.R. Wronski
New Light Trapping in Thin Film Solar Cells Using Textured Photonic Crystals A12.3
Lirong Zeng, Yasha Yi, Ching-yin Hong, Xiaoman Duan, and Lionel C. Kimerling
Effect of Fermi Level Position in Intrinsic a-Si:H on the Evolution of Defect States Under Light Exposure. A13.1
M. Zeman, V. Nádaždy, R. Durný, and J.W. Metselaar
The Creation and Annealing Kinetics of Fast Light Induced Defect States created by 1 Sun Illumination in a-Si:H A13.2
M.L. Albert, J. Deng, X. Niu, J.M. Pearce, R.W. Collins, and C.R. Wronski
Image and Color Sensitive Detector Based on Double p-i-n/p-i-n a-SiC:H Photodiode A13.4
M. Vieira, M. Fernandes, P. Louro, A. Fantoni, Y. Vygranenko,G. Lavareda, and C.N. Carvalho
Observation of a Hydrogen Doublet Site in High Defect Density As-Grown a-Si:H by 1H NMR A13.5
D. Bobela, T. Su, P. C. Taylor, and G. Ganguly
Light-Soaking Effects on the Open-Circuit Voltage of a-Si:H Solar Cells A13.6
Jianjun Liang, E.A. Schiff, S. Guha, B. Yan, and J. Yang
The Effects of Hydrogen Profiling and of Light-Induced Degradation on the Electronic Properties of Hydrogenated Nanocrystalline Silicon A13.7
A.F. Halverson, J.J. Gutierrez, J.D. Cohen, Baojie Yan, Jeffrey Yang, and Subhendu Guha
Application of Spectroscopic Ellipsometry and Infrared Spectroscopy for the Real-Time Control and Characterization of a-Si:H Growth in a-Si:H/c-Si Heterojunction Solar Cells A14.1
Hiroyuki Fujiwara and Michio Kondo
Real-Time Spectroscopic Ellipsometry as an In Situ Probe of the Growth Dynamics of Amorphous and Epitaxial Crystal Silicon for Photovoltaic Applications A14.2
D.H. Levi, C.W. Teplin, E. Iwaniczko, Y. Yan, T.H. Wang, and H.M. Branz
Novel In Situ and Real-Time Optical Probes to Detect (Surface) Defect States of a-Si:H A14.3
W.M.M. Kessels, I.M.P. Aarts, J.J.H. Gielis, J.P.M. Hoefnagels, and M.C.M. van de Sanden
Multiple-Trapping Model With Meyer-Neldel Effect and Field-Dependent Effects: Time-of-Flight Simulations for a-Si:H A15.2
Jesse Maassen, Arthur Yelon, Louis-André Hamel, and Wen Chao Chen
Computer Modelling of Non-Equilibrium Multiple-Trapping and Hopping Transport in Amorphous Semiconductors A15.3
C. Main, J.M. Marshall, S. Reynolds, M.J. Rose, and R. Brüggemann
Radiation Hard Amorphous Silicon Particle Sensors A15.4
N. Wyrsch, C. Miazza, S. Dunand, C. Ballif, A. Shah, M. Despeisse, D. Moraes, and P. Jarron
Low Temperature Thin-Film Silicon Diodes for Consumer Electronics A15.5
Qi Wang, Scott Ward, Anna Duda, Jian Hua, Paul Stradins, Richard S. Crandall, Howard M. Branz, Frank Jeffrey, Hao Lou, Craig Perlov, Warren Jackson, Ping Mei, and Carl Taussig
Effect of the Load Resistance in the Linearity and Sensitivity of MIS Position Sensitive Detectors A15.6
H. Águas, L. Pereira, L. Raniero E. Fortunato, and R. Martins
Real Time Monitoring of the Crystallization of Hydrogenated Amorphous Silicon A16.1
Paul Stradins, David Young, Howard M. Branz, Matthew Page, and Qi Wang
Development of Deposition Phase Diagrams for Thin Film Si:H and Si1-xGex:H Using Real Time Spectroscopic Ellipsometry A16.3
N.J. Podraza, G.M. Ferreira, C.R. Wronski, and R.W. Collins
Electrolyte-Gate a-Si:H Thin Film Transistors A17.4
Dina I. Gonçalves, Duarte M. Prazeres, Virginia Chu, and João P. Conde
High Electron Mobility (~150 cm2/Vs) PECVD Nanocrystalline Silicon Top-Gate TFTs at 260°C A17.5
Czang-Ho Lee, Andrei Sazonov, and Arokia Nathan
Threshold Voltage Optimization With Ion Shower Implantation for Polysilicon Thin-film Transistors A17.7
B.D. Choi, D.C. Choi, C.Y. Im, K.H. Choi, C.H. Yu, R. Kakkad, and H.K. Chung
Stark Splitting in Photoluminescence Spectra of Er in a-Si:H A18.1
Minoru Kumeda, Mitsuo Takahashi, Akiharu Morimoto, and Tatsuo Shimizu
PECVD Grown Hydrogenated Polymorphous Silicon Studied Using Current Transient Spectroscopies in PIN Diodes A18.2
Vibha Tripathi, Y.N. Mohapatra, and P. Roca i Cabarrocas
Characterization of Amorphous Silicon by Secondary Ion Mass Spectrometry A18.3
Yupu Li, Shaw Wang, Xue-Feng Lin, and Luncun Wei
AFM Morphology Study of Si1-yGey:H Films Deposited by LF PE CVD From Silane-Germane With Different Dilution A18.5
L. Sanchez, A.Kosarev, A.Torres, T.Felter, and A.Ilinskij
Optical Properties of Amorphous Silicon-Yttrium Films A18.7
Alexandra N. Shmyryeva and Tetyana V. Semikina
Fabrication of Nano-Crystalline Porous Silicon on Si Substrates by a Plasma Enhanced Hydrogenation Technique A19.1
Y. Abdi, P. Hashemi, F. Karbassian, F.D. Nayeri, A. Behnam, S. Mohajerzadeh, J. Koohsorhki, M.D. Robertson, and E. Arzi
CO2 Laser Annealing Synthesis of Silicon Nanocrystals Buried in Si-Rich SiO2 A19.2
Chun-Jung Lin, Yu-Lun Chueh, Li-Jen Chou, Hao-Chung Kuo, and Gong-Ru Lin
High Density Plasma Processing of Microcrystalline Si Thin Films A19.3
P.C. Joshi, A.T. Voutsas, and J.W. Hartzell
Crystallographic Study of the Initial Growth Region of µc-Si With Different Preferential Orientations A19.4
Y. Sobajima, T. Sugano, T. Kitagawa, T. Toyama, and H. Okamoto
Dependence of Microcrystalline Silicon Growth on Ion Flux at the Substrate Surface in a Saddle Field PECVD A19.6
Erik Johnson, Nazir P. Kherani, and Stefan Zukotynski
Growth of "New Form" of Polycrystalline Silicon Thin Films Synthesized by Hot Wire Chemical Vapor Deposition A19.8
A.R. Middya, J-J. Liang, and K. Ghosh
Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C A19.9
Sang-Myeon Han, Joong-Hyun Park, Hye-Jin Lee, Kwang-Sub Shin, and Min-Koo Han
Effects of N2O Fluence on the PECVD-Grown Si-Rich SiOx With Buried Si Nanocrystals A19.11
Chun-Jung Lin, Hao-Chung Kuo, Chia-Yang Chen, Yu-Lun Chueh, Li-Jen Chou, Chih-Wei Chang, Eric Wei-Guang Diau, and Gong-Ru Lin
Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique A20.2
R.J. Soukup, N.J. Ianno, J.S. Schrader, and V.L. Dalal
Improved Optical Loss Characteristics of PECVD Silicon Oxynitride Films Using Low Frequency Plasma A20.3
S. Naskar, C.A. Bower, S.D. Wolter, B.R. Stoner, and J.T. Glass
Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium A20.6
Nanlin Wang and Vikram L. Dalal
Use of Transparent Conductive Oxide Materials With Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology A21.1
Scott J. Jones, Joachim Doehler, Tongyu Liu, David Tsu, Jeff Steele, Rey Capangpangan, and Masat Izu
Growth Chemistry of Nanocrystalline Si:H Films A21.4
Vikram L. Dalal, Kamal Muthukrishnan, Daniel Stieler, and Max Noack
Metal Induced Growth of Poly-Si Solar Cells and Silicide Nanowires by Use of Multiple Catalyst Layers A21.5
Joondong Kim, Chunhai Ji, and Wayne A. Anderson
Ultra-Shallow Junction Formation by a Non-Melting Process: Double-Pulsed Green Laser Annealing A21.7
Toshio Kudo, Susumu Sakuragi, and Kazunori Yamazaki
Temperature-Dependent Open-Circuit Voltage Measurements and Light-Soaking in Hydrogenated Amorphous Silcon Solar Cells A21.8
Jianjun Liang, E.A. Schiff, S. Guha, B. Yan, and J. Yang
Influence of Hydrogen Plasma on Electrical and Optical Properties of Transparent Conductive Oxides A21.10
L. Raniero, A. Gonçalves, A. Pimentel, I. Ferreira, S. Zhang, L. Pereira, H. Águas, E. Fortunato, and R. Martins
Gate Oxide Integrity for Polysilicon Thin-Film Transistors: A Comparative Study for ELC, MILC, and SPC Crystallized Active Polysilicon Layer A22.1
D.C. Choi, B.D. Choi, J.Y. Jung, H.H. Park, J.W. Seo, K.Y. Lee, and H.K. Chung
Low Temperature Metal-Free Fabrication of Polycrystalline Si and Ge TFTs by PECVD Hydrogenation A22.2
Pouya Hashemi, Jaber Derakhshandeh, Bahman Hekmatshoar, Shamsoddin Mohajerzadeh, Yaser Abdi, and Michael D. Robertson
Active Pixel TFT Arrays for Digital Fluoroscopy in a-Si:H Technology A22.4
Jackson Lai, Nader Safavian, Arokia Nathan, and John A. Rowlands
The Hysteresis Analysis of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode A22.5
Jae-Hoon Lee, Bong-Hyun You, Kwang-Sub Shin, and Min-Koo Han
Low Hydrogen Concentration Silicon Nitride as a Gate Dielectric of TFTs for Flexible Display Application A22.6
Joong Hyun Park, Chang Yeon Kim, Kwang Sub Shin, Sang Geun Park, and Min Koo Han
Characterization of the Silicon-Based Thin Film Multi-Junction Solar Cells A23.1
Yoshihiro Hishikawa
High Efficiency Solar Cells With Intrinsic Microcrystalline Silicon Absorbers Deposited at High Rates by VHF-PECVD A23.2
Yaohua Mai, Stefan Klein, Reinhard Carius, Xinhua Geng, and Friedhelm Finger
Improved Back Reflector for High Efficiency Hydrogenated Amorphous and Nanocrystalline Silicon Based Solar Cells A23.3
Baojie Yan, Jessica M. Owens, Chun-Sheng Jiang, Jeffrey Yang, and Subhendu Guha
Bifacial Silicon Heterojunction Solar Cell With Deposited Back Surface Field A23.4
H.D. Goldbach, A. Bink, and R.E.I Schropp
High-Performance Amorphous Silicon Emitter for Crystalline Silicon Solar Cells A23.5
T.H. Wang, E. Iwaniczko, M.R. Page, Q. Wang, D.H. Levi, Y. Yan, Y. Xu, and H.M. Branz
Structure of Microcrystalline Solar Cell Materials: What Can We Learn From Electron Microscopy? A24.1
M. Luysberg and L. Houben
Structural and Electronic Properties of Hydrogenated Nanocrystalline Silicon Films Made with Hydrogen Dilution Profiling Technique A24.2
Keda Wang, Daxing Han, D. L. Williamson, Brittany Huie, J.R. Weinberg-Wolf, Baojie Yan, Jeffrey Yang, and Subhendu Guha
Microcrystalline and Nanocrystalline Silicon: Simulation of Material Properties A24.3
R. Biswas, B.C. Pan, and V. Selvaraj
Doping Dependence of Chlorine Incorporation in SiCl4-Based Microcrystalline Silicon Films A24.4
Wolfhard Beyer, Reinhard Carius, and Uwe Zastrow
Annealing Characteristics of Al-Doped Hydrogenated Microcrystalline Cubic Silicon Carbide Films A24.5
S. Miyajima, A. Yamada, and M. Konagai
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