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| Suggested format for citation of papers in this volume: |
| List all author names: Title of article, in Materials, Integration and Packaging Issues for High-Frequency Devices II, edited by Yong S. Cho, Don Shiffler, Clive A. Randall, Harrie A.C. Tilmans, and Takaaki Tsurumi (Mater. Res. Soc. Symp. Proc. 833, Warrendale, PA , 2005), insert paper number. |
RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films For High Frequency Applications G1.2
Ali Mahmud, T.S. Kalkur, and N. Cramer
An Application of a Low-Loss MOD-Made BST Film Developed Especially with PLD Initial Nucleation Layer to a 20 GHz Tunable Phase Shifter G1.5
Minoru Noda, Daniel Popovici, Masanori Okuyama, Yoshinobu Sasaki, and Makio Komaru
Integrating Ba1-xSrxTiO3 Thin Films With Large Area, Affordable, Industry Standard Substrates for Microwave Applications G1.6
W.D. Nothwang, M.W. Cole, P.C. Joshi, S. Hirsch, E. Ngo, C. Hubbard, and J.D. Demaree
Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films G1.7
Ruey-Ven Wang, Paul C. McIntyre, John D. Baniecki, Kenji Nomura, Takeshi Shioga, and Kazuaki Kurihara
Effect of Deposition Temperature and Post-Heat-Treatment Condition on the Characteristics of (100)-Self-Orientation LaNiO3 Films Prepared by RF Magnetron Sputter Deposition G1.9
Kenji Takahashi, Muneyasu Suzuki, Takahiro Oikawa, Haydn Chen, and Hiroshi Funakubo
Microwave Materials With High Q and Low Dielectric Constant for Wireless Communications G2.4
Hitoshi Ohsato
Improvement of Adhesion and Microwave Transmission Characteristics of Indium Bump by Silver Coating for Low Temperature Flip-Chip Applications G3.1
Kun-Mo Chu, Jung-Hwan Choi, Jung-Sub Lee, Han Seo Cho, Seong-Ook Park, Hyo-Hoon Park, and Duk Young Jeon
Epitaxial Aluminum Electrodes on Theta Rotated Y-X LiTaO3 Piezoelectric Substrate for High Power Durable SAW Duplexers G3.2
Osamu Nakagawara, Hironori Suzuki, Shuji Yamato, Masayuki Hasegawa, and Hideharu Ieki
Three Dimensional Integration With Benzocyclobutene as the Wafer-Bonding Medium G3.5
Sang Kevin Kim, Lei Xue, and Sandip Tiwari
Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors From Current Gain Reduction During Passivation G3.7
Byoung-Gue Min, Jong-Min Lee, Seong-Il Kim, Chul-Won Ju, and Kyung-Ho Lee
Width and Gap Dependent Performance of Ferroelectric Coplanar Waveguide Phase Shifter Based on Ba1-xSrxTiO3 Thin Films G3.8
Seung Eon Moon, Eun-Kyoung Kim, Min Hwan Kwak, Young-Tae Kim, Han-Cheol Ryu, Su-Jae Lee, Kwang-Yong Kang, and Won-Jeong Kim
Effect of Ta2O5 on Dielectric Properties of Forsterite Ceramics G3.9
Dong-Young Kim, Hong-Yeol Lee, Dong-Suk Jun, and Sang-Seog Lee
MIM Capacitors Using ALD Al2O3 for RF IC and DRAM Applications G3.10
Sung Yong Ko, Jung Ik Oh, Joung Cheul Choi, Kang Hee Lee, Young Ho Bae, Young Chul Jung, and Yong Hyun Lee
A Study on Thin Film Microstructure and Its Effects on Acoustic Film Velocity Through Picosecond Ultrasonics Technique G3.11
Ta-Ching Li, Nen-Wen Pu, Ben-Je Lwo, Chin-Hsing Kao, and Long-Jang Hu
Microwave Dielectric Properties of Oriented BaLa4Ti4O15 Ceramics Fabricated by Templated Grain Growth G3.12
Yuko Fukami, Kensuke Wada, Ken-ichi Kakimoto, and Hitoshi Ohsato
ntegrated On-chip Planar Solenoid Inductors with Patterned Permalloy Cores for High Frequency Applications G3.21
Jinsook Kim, Weiping Ni, and Edwin C. Kan
Embedding Ceramic Thick-Film Capacitors into Printed Wiring Boards G4.1
William Borland, Marc Doyle, Lynne Dellis, Olga Renovales, and Diptarka Majumdar
Ferrite Properties and Technology Issues for Improved Microwave Systems G4.6
Gerald F. Dionne and Daniel E. Oates
Optimization of Passive Isolator Based On Barium Ferrite Sputtered Films G4.8
M. Le Berre, S. Capraro, J.P. Chatelon, T. Rouiller, B. Bayard, D. Barbier, and J.J. Rousseau
Dielectric and Optical Properties of Perovskite-Type Artificial Superlattices G5.3
Takakiyo Harigai, Song-Min Nam, Hirofumi Kakemoto, Satoshi Wada, Keisuke Saito, and Takaaki Tsurumi
Evolution of Anisotropic Elastic Strains, and rf/Microwave Dielectric Properties of <110> Textured BST 60/40 Thin Films on <100> NdGaO3 Substrates G5.6
W.K. Simon, E.K. Akdogan, J.A. Bellotti, and A. Safari
A High-K Nanocomposite for High Density Chip-to-Package Interconnections G5.9
Taeyun Kim, Jayesh Nath, John Wilson, Stephen Mick, Paul D. Franzon, Michael B. Steer, and Angus I. Kingon
MEMS SiGe Technologies for RF and Millimeterwave Communications G6.1
J.P. Busquére, N. Do, F. Bougriha, P. Pons, K .Grenier, D. Dubuc, H. Schumacher, P. Abele, A. Rydberg, E. Ojefors , P. Ancey, G. Bouche, and R. Plana
Photodefinable Metal Oxide Dielectrics II: Direct Fabrication of Patterned High-k Dielectrics for Low Cost RF Capacitive MEMS Switches G6.3
Michael Romeo, Isaac Finger, Augustin Jeyakumar, Guoan Wang, John Papapolymerou, and Clifford L. Henderson
Novel High-Q Suspended Inductors on Alumina Ceramic Substrates G6.4
Lisa Woodward, Paul Woo, Mircea Capanu, Ivo Koutsaroff, C.R. Selvakumar, and Andrew Cervin-Lawry
Die-on-Wafer and Wafer-Level Three-Dimensional (3D) Integration of Heterogeneous IC Technologies for RF-Microwave-Millimeter Applications G6.8
J.-Q. Lu, S. Devarajan, A.Y. Zeng, K. Rose, and R.J. Gutmann
A Silicon Nitride Based Shallow Trench Isolation With Side-Gate for CMOS Integration with MEMS Components for System-On-Chip Applications G6.9
Ali Gokirmak and Sandip Tiwari
Evaluation of Dielectric Permittivity of Barium Titanate Fine Powders G7.5
Takaaki Tsurumi, Takashi Sekine, Hirofumi Kakemoto, Takuya Hoshina, Song-Min Nam, Hiroaki Yasuno, and Satoshi Wada
Temperature Dependent Dielectric Properties of Polycrystalline 96%Al2O3 G7.6
Liang-Yu Chen and Gary W. Hunter
Ion Track Enabled High Aspect Ratio Flexible PCB Via Technology G7.7
Mikael Lindeberg, Hanna Yousef, Erik Öjefors, Anders Rydberg, and Klas Hjort
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