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2004 FALL MEETING PROCEEDINGS

Symposium F
Group-IV Semiconductor Nanostructures

Editors: Leonid Tsybeskov, David J. Lockwood, Christophe Delerue, Masakazu Ichikawa

MRS Proceedings Volume 832
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Suggested format for citation of papers in this volume:
List all author names: Title of article, in Group-IV Semiconductor Nanostructures, edited by Leonid Tsybeskov, David J. Lockwood, Christophe Delerue, and Masakazu Ichikawa (Mater. Res. Soc. Symp. Proc. 832, Warrendale, PA , 2005), insert paper number.

 

Ribbon Award Winner
Silicon-Based Integrated Optics: Waveguide Technology to Microphotonics F1.1
Siegfried Janz, Alexei Bogdanov, Pavel Cheben, André Delâge, Boris Lamontagne, Marie-Joseé Picard, Dan-Xia Xu, Kuan Pei Yap, and Winnie N. Ye

Light Emission in Aperiodic Thue-Morse Dielectrics F1.3
L. Dal Negro, J.H. Yi, V. Nguyen, Y. Yi, J. Michel, and L.C. Kimerling

Photoluminescent Coupled Multiple Microcavity Structures Made of Porous Silicon F1.6
V. Agarwal, J.A. Soto Urueta, and J. Miguel Gracia

Raman Gain in Silicon Using Highly Confined Waveguide Structure F1.9
Qianfan Xu, Vilson R. Almeida, and Michal Lipson

Charge Transport In Silicon Nanocrystal Arrays F3.1
R. Krishnan, Q. Xie, J. Kulik, X.D. Wang, T.D. Krauss, and P.M. Fauchet

Computer Simulation of Charging and Erasing Transients of a Ge/Si Hetero-Nanocrystal-Based Flash Memory F3.3
Dengtao Zhao, Yan Zhu, Ruigang Li, and Jianlin Liu

Threshold Voltage Shift in Hetero-Nanocrystal Floating Gate Flash Memory F3.4
Yan Zhu, Dengtao Zhao, Ruigang Li, and Jianlin Liu

Structural Characterization and Coulomb Blockade of a-SiNx/ Nanocrystalline Si /a-SiNx Asymmetric Double-Barrier Structures F3.6
L.C. Wu, M. Dai, X.F. Huang, P.G. Han, L.W. Yu, H.C. Zou, W. Li, and K.J. Chen

Possible Operation of Periodically Layered Nanocrystalline Porous Silicon as an Acoustic Band Crystal Device F3.7
Akira Kiuchi, Bernard Gelloz, Akira Kojima, and Nobuyoshi Koshida

Thermal Conductivity of Porous Silicon Evaluated From Phase Characteristics of Photoacoustic Spectroscopy F3.8
Masato Ohmukai, Hirokazu Shimizu, and Yasuo Tsutsumi

Si1-xGex Nanocrystals Observed by EFTEM: Influence of the Dry and Wet Oxidation Process F3.16
A. Cuadras, J. Arbiol, B. Garrido, J.R Morante, A. Rodriguez, and T. Rodríguez

Towards a Si/SiGe Quantum Cascade Laser for Terahertz Applications F4.1
D.J. Paul, S.A. Lynch, P. Townsend, Z. Ikonic, R.W. Kelsall, P. Harrison, S.L. Liew, D.J. Norris, A.G. Cullis, J. Zhang, M. Bain, H.S. Gamble, W.R. Tribe, and D.D. Arnone

Recent Results on the Road to a SiGe Quantum Cascade Laser F4.2
Alex Borak, Soichiro Tsujino, Claudiu Falub, Maxi Scheinert, Laurent Diehl, Elizabeth Müller, Hans Sigg, Detlev Grützmacher, Ulf Gennser, Isabelle Sagnes, Stefan Blunier, Thomas Fromherz, Yves Campidelli, Oliver Kermarrec, Daniel Bensahel, and Jerome Faist

The Emission of Terahertz Radiation From Doped Silicon Devices F4.3
Pengcheng Lv, James Kolodzey, R. Thomas Troeger, Sangcheol Kim, and S.K. Ray

Trophy Award Winner
Progress in the Growth and Characterization of Ge Quantum Dots and Islands F5.1
J.-M. Baribeau, N.L. Rowell, and D.J. Lockwood

Growth and Overgrowth of Ge/Si Quantum Dots: An Observation by Atomic Resolution HAADF-STEM Imaging F5.4
Dan Zhi, Paul A. Midgley, Rafal E. Dunin-Borkowski, Bruce A. Joyce, Don W. Pashley, Andrew L. Bleloch, and Peter J. Goodhew

Origin of the Multi-Exponential Decay Dynamics in Light-Emitting Silicon Nanocrystals F6.2
Cécile Reynaud, Olivier Guillois, Nathalie Herlin-Boime, Gilles Ledoux, and Friedrich Huisken

Improved Optoelectronic Characteristics of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing F7.1
Bernard Gelloz, Akira Kojima, and Nobuyoshi Koshida

Uniform Dome-Shaped Self-Assembled Ge Islands by UHV/CVD After Boron Pre-Deposition F7.3
Ning Deng, Wentao Huang, and Peiyi Chen

Classical Versus Ab Initio Structural Relaxation: Electronic Excitations and Optical Properties of Ge Nanocrystals Embedded in a SiC Matrix F7.4
Giancarlo Cappellini, H.-Ch. Weissker, D. De Salvator, J. Furthmüller, F. Bechstedt, G. Satta, F. Casula, and L. Colombo

Evolution of the Luminescence Spectrum During the Dry and Steam Oxidation of SiGe Films F7.7
A. Rodríguez, J. Sangrador, T. Rodríguez, A.C. Prieto, M. Avella , and J. Jiménez

Theory of Large-Scale Electronic Structure Calculation and Nanostructures Formed in Silicon Cleavage Simulation: Surface Reconstruction, Step and Bending F7.9
Takeo Hoshi, Yusuke Iguchi, and Takeo Fujiwara

Metal-Free Growth of Si/SiO2 Nanowires by Annealing SiOx (x<2) Films Deposited by PECVD F7.11
Xiaoxin Wang, Jianguo Zhang, and Qiming Wang

Nanorings, Nanopillars and Nanospikes on Si(111) by Modified Nanosphere Lithography: Fabrication and Application F7.14
Jefferson Rose and Delroy Baugh

Fabrication of a Regular Array of Atomic Silicon Wires on Silicon F7.15
Takeharu Sekiguchi, Shunji Yoshida, and Kohei M. Itoh

Characterization of SiC Nanowires Grown by APCVD Using Single Precursors F7.16
Dae-Ho Rho, Jae-Soo Kim, Dong-Jin Byun, Jae-Woong Yang, Jae-Hoon Lee , and Na-Ri Kim

Growth and Characterization of SiOx Nanowires by VLS and SLS Growth Mechanism F7.17
Dae-Ho Rho, Jae-Soo Kim, Dong-Jin Byun, Jae-Woong Yang, Jae-Hoon Lee, and Na-Ri Kim

Optical Properties of Ge Nanowires Grown on Silicon (100) and (111) Substrates F7.20
V. Sharma, B.V. Kamenev, L. Tsybeskov, and T.I. Kamins

Carrier Transport in One-Dimensional Ge Nanowires/Si Substrate Heterojunctions F7.21
Eun-Kyu Lee, Boris V. Kamenev, Pavel A. Forsh, Ted I. Kamins, and Leonid Tsybeskov

Formation of Hydrogen-Passivated Silicon Nanochains by Pulsed Laser Ablation Without Thermal Annealing F7.24
Mitsuru Inada, Ikurou Umezu, Shukichi Tanaka, Shinro Mashiko, and Akira Sugimura

Analysis of Growth Rate of Silicon Nanowires F7.25
J. Kikkawa, Y. Ohno and S. Takeda

Structural Modifications of nc-Si/SiO2 Superlattices by Localized Photo-Induced Heating F7.26
B.V. Kamenev, H. Grebel, L. Tsybeskov, and V.Yu. Timoshenko

Precipitation of Highly Luminescent Phases From PECVD Si Suboxides F7.27
M. Perálvarez, M. López, B. Garrido, J.R. Morante, J.Barreto, V.J. Cadarso, M. Riera, K.Zinoviev, and C.Dominguez

Electric Force Microscopy Of Individually Charged Silicon Nanoparticles F8.1
Thierry Melin, Heinrich Diesinger, Sophie Barbet, Dominique Deresmes, Thierry Baron, and Didier Stievenard

Quasiballistic Electron Emission From Planarized Nanocrystalline-Si Cold Cathode F8.8
Yoshishige Tsuchiya, Takuya Nakatsukasa, Hiroshi Mizuta, Shunri Oda, Akira Kojima, and Nobuyoshi Koshida

Ribbon Award Winner
Enhancing the Sound Pressure of Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon F8.9
Kenji Tsubaki, Takuya Komoda, and Nobuyoshi Koshida

Nucleation and Growth Processes of Silicon Nanowires F9.1
Seiji Takeda, Nobuhiko Ozaki, Kohei Ueda, Hideo Kohno, Jun Kikkawa, and Yutaka Ohno

Size Control and Phonon Confinement of Silicon Nanowires Synthesized by Laser Ablation F9.3
N. Fukata, T. Oshima, T. Tsurui, S. Ito, and K. Murakami

Complex Diameter Modulations in Silicon Carbide Nanowire Growth F9.5
Hideo Kohno and Hideto Yoshida

Silicon Nanowires: Doping Dependent n- and p- Channel FET Behavior F9.9
Kumhyo Byon, John E. Fischer, Kofi W. Adu, and Peter. C. Eklund

Ribbon Award Winner
Fabrication and Electrical Characterization of Silicon Nanowire Arrays F9.10
Sarah M. Dilts, Ahmad Mohmmad, Kok-Keong Lew, Joan M. Redwing, and Suzanne E. Mohney

Hydrogen Passivation of Er and Si Nanocrystallites in Er-Doped SiO2 - Increase in Photoluminescence F10.2
N. Fukata, C. Li, H. Uematsu, T. Arai, T. Makimura, and K. Murakami

Optical Properties of Silicates Co-Doped With Si and Er3+ Ions F10.3
Y. Lebour, P. Pellegrino, J.A. Moreno, C. Garcia, B. Garrido, J.R. Morante, and M. Prassas

Luminescence of Rare Earth Doped Si/Al/SiO2 Co-Sputtered Films F10.4
C. Rozo, L.F. Fonseca, O. Resto, and S.Z. Weisz

Optical Activation of Si Nanowires Using Er-Doped Sol-Gel Derived Silica F10.5
Kiseok Suh, Oun-Ho Park, Byeong-Soo Bae, Jung-Chul Lee, Heon-Jin Choi, and Jung H. Shin

Anisotropically Nanostructured Silicon: A First-Principle Approach F10.8
Yuri Bonder and Chumin Wang

Pump-Probe Experiments on Low Loss Silica Waveguides Containing Si Nanocrystals F10.11
D. Navarro-Urrios, N. Daldosso , M. Melchiorri, F. Sbrana, L. Pavesi, C. García, B. Garrido, P. Pellegrino, J.R. Morante, E.Scheid, and G. Sarrabayrouse

Multi-Color Luminescence From Nanocrystalline Silicon F10.12
Hiroshi Kunii, Keisuke Sato, Kenji Hirakuri, and Tomio Izumi

Improvement of Operating Voltage and Luminescent Properties in Nanocrystalline Silicon Electroluminescent Device F10.13
K. Sato, K. Hirakuri, and T. Izumi

Preparation of the Atomically Straight Step-Edge Si (111) Substrates as Templates for Nanostructure Formation F10.17
Shunji Yoshida, Takeharu Sekiguchi, and Kohei M. Itoh

Surface Cusp Formation in Si Homoepitaxy F10.18
J.-M. Baribeau, X. Wu, M. Beaulieu, D.J. Lockwood, and N.L. Rowell

Synthesis of Microcrystalline Silicon Films by Low Energy Electron-Beam-Induced Deposition at Cryogenic Temperature F10.19
Tetsuya Sato, Kiyokazu Nakagawa, Yutaka Aoki, and Shouji Sato

Self-Limited Photo-Assisted Synthesis of Silicon Nanocrystals F10.21
C.Y. Chen, S. Kimura, S. Sen, S. Nozaki , H. Ono, K. Uchida, and H. Morisaki

Pump-Probe Experiments on Er Coupled Si-Nanocrystals Rib-Loaded Waveguides F11.3
N. Daldosso, D. Navarro-Urrios, M. Melchiorri, L. Pavesi, F. Gourbilleau, M. Carrada, R. Rizk, C. García, P. Pellegrino, B. Garrido, and L. Cognolato

Location of Er Atoms With Respect to Si Nanoclusters in Luminescent Er and Si Co-Implanted Silicates F11.4
P. Pellegrino, B. Garrido, J. Arbiol, C. Garcia, Y. Lebour, and J.R. Morante

CMOS Compatible Erbium Coupled Si Nanocrystal Thin Films for Microphotonics F11.8
M. Stolfi, L. Dal Negro, J. Michel, X. Duan, J. Le Blanc, J. Haavisto, and L.C. Kimerling


 

 

 








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