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| Suggested format for citation of papers in this volume: |
| List all author names: Title of article, in GaN, AlN, InN and Their Alloys, edited by Christian Wetzel, Bernard Gil, Masaaki Kuzuhara, and Michael Manfra (Mater. Res. Soc. Symp. Proc. 831, Warrendale, PA , 2005), insert paper number. |
Structural Defects Rlated Issues of GaN-Based Laser Diodes E1.1
Shigetaka Tomiya, Motonobu Takeya, Shu Goto, and Masao Ikeda
Latest Developments in Blue-Violet Laser Diodes Grown by Molecular Beam Epitaxy E1.2
V. Bousquet, M. Kauer, K. Johnson, C. Zellweger, S.E. Hooper, and J. Heffernan
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Growth, Characterization, and Application of High Al-Content AlGaN and High Power III-Nitride Ultraviolet Emitters E1.4
Z. Ren, S.-R. Jeon, M. Gherasimova, G. Cui, J. Han, H. Peng, Y.K. Song, A.V. Nurmikko, L. Zhou, W. Goetz, M. Krames, and H.-K. Cho |
Fabrication of LED Based on III-V Nitride and Its Applications E1.6
N. Shibata
Junction Temperature Measurements in Deep-UV Light-Emitting Diodes E1.7
Y. Xi, J.-Q. Xi, Th. Gessmann, J.M. Shah, J.K. Kim, E.F. Schubert, A.J. Fischer, M.H. Crawford, K.H.A. Bogart, and A.A. Allerman
Effect of GaN Surface Treatment on the Morphological and Optoelectronic Response of Violet Light Emitting Diodes E1.8
Muhammad Jamil, James R. Grandusky, and Fatemeh Shahedipour-Sandvik
Moth-Eye Light-Emitting Diodes E1.9
Hideki Kasugai, Yasuto Miyake, Akira Honshio, Takeshi Kawashima, Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Hiroyuki Kinoshita, and Hiromu Shiomi
Growth of Nonpolar GaN(1100) Films and Heterostructures by Plasma-Assisted Molecular Beam Epitaxy E2.1
Oliver Brandt, Yue Jun Sun, and Klaus H. Ploog
On the Dynamics of InGaN Dot Formation by RF-MBE Growth E2.2
Tomohiro Yamaguchi, Sven Einfeldt, Stephan Figge, Carsten Kruse, Claudia Roder, and and Detlef Hommel
GaN Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy E2.4
Tao Xu, Adrian Williams, Christos Thomidis, Theodore D. Moustakas, Lin Zhou, and David J. Smith
Ammonothermal Growth of GaN Utilizing Negative Temperature Dependence of Solubility in Basic Ammonia E2.8
Tadao Hashimoto, Kenji Fujito, Feng Wu, Benjamin A. Haskell, Paul T. Fini, James S. Speck, and Shuji Nakamura
Metalorganic Chemical Vapor Deposition of Non-Polar III-Nitride Films Over a-Plane SiC Substrates E2.9
Jiawei Li, Zheng Gong, Changqing Chen, Vinod Adivarahan, Mikhail Gaevski, Edmundas Kuokstis, Maxim Shatalov, Ying Gao, Zehong Zhang, Arul Arjunan, T. S. Sudarshan, H. Paul Maruska, Jinwei Yang, and M. Asif Khan
Sublimation Growth of Aluminum Nitride-Silicon Carbide Alloy Crystals on SiC (0001) Substrates E3.1
Z. Gu, J.H. Edgar, E.A. Payzant, H.M. Meyer, L.R. Walker, A. Sarua, and M. Kuball
Determination of Surface Barrier Height and Surface State Density in GaN Films Grown on Sapphire Substrates E3.2
Seong-Eun Park, Joseph J. Kopanski, Youn-Seon Kang, Lawrence H. Robins, and Hyun-Keel Shin
Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method E3.3
Masashi Kato, Hideki Watanabe, Masaya Ichimura, and Eisuke Arai
Fabrication and Characterization of GaN Nanopillar Arrays E3.5
Y.D. Wang, S. Tripathy, S.J. Chua, and C.G. Fonstad
The Composition Dependence of the Optical Properties of InN-Rich InGaN Grown by MBE E3.6
R.W. Martin, P.R. Edwards, S. Hernandez, K. Wang, I. Fernandez-Torrente, M. Kurouchi, Y. Nanishi, K.P. O'Donnell
Unusual Properties of the Red and Green Luminescence Bands in Ga-Rich GaN E3.7
M.A. Reshchikov and H. Morkoç
Reduction of Dislocation Density in AlGaN With High AlN Molar Fraction by Using a Rugged AlN Epilayer E3.11
Akira Ishiga, Takashi Onishi, Yuhuai Liu, Masaya Haraguchi, Noriyuki Kuwano, Tomohiko Shibata, Mitsuhiro Tanaka, Hideto Miyake, and Kazumasa Hiramatsu
Fabrication and Characterization of UV Schottky Detectors by Using a Freestanding GaN Substrate E3.12
Yasuhiro Shibata, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu, Youichiro Ohuchi, Hiroaki Okagawa, Kazuyuki Tadatomo, Tatsuya Nomura, Yutaka Hamamura, and Kazutoshi Fukui
Strain-Induced Effects on the Resonant Tunneling of Holes in Zinc-Blende AlyGa1-yN/AlxGa1-xN/AlyGa1-yN Heterostructures E3.13
C. Meguenni, K. Zitouni , N. Mokdad, and A. Kadri
Excitation Wavelength Dependent Raman Scattering in Low and Highly Degenerate InN Films E3.16
V.M. Naik, H. Dai, R. Naik, D.B. Haddad, J.S. Thakur, G.W. Auner, H. Lu, and W.J. Schaff
Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111) E3.17
M.B. Charles, M.J. Kappers, and C.J .Humphreys
Electrical Characterization of As and [As+Si] Doped GaN Grown by Metalorganic Chemical Vapor Deposition E3.19
M. Ahoujja, S. Elhamri , and R. Berney, Y.K. Yeo, and R. L. Hengehold
Polarity Control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates E3.20
Seiji Mita, Ramon Collazo, Raoul Schlesser, and Zlatko Sitar
Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall Effect in (Ga,Mn)As Dilute Magnetic Semiconductors E3.21
K. Ghosh, Mohammad Arif, T. Kehl, R.J. Patel, S.R. Mishra, and J.G. Broerman
Dependence of the E2 and A1(LO) Modes on InN Fraction in InGaN Epilayers E3.22
S. Hernández, R. Cuscó, L. Artús, K.P. O'Donnell, R.W. Martin, I.M. Watson, Y. Nanishi, M. Kurouchi, and W. Van der Stricht
Initial Stages of Growth of Gallium Nitride via Iodine Vapor Phase Epitaxy E3.23
W.J. Mecouch, B.J. Rodriguez, Z.J. Reitmeier, J-S. Park, R.F. Davis, and Z. Sitar
Characterization of the Carrier Confinement for InGaN/GaN Light Emitting Diode With Multiquantum Barriers E3.27
Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang
Structural Properties of Eu Doped GaN and its Relation With Luminescence Properties E3.28
Hyungjin Bang, Takahiro Maruyama, Shigeya Naritsuka, and Katsuhiro Akimoto
Extended X-ray Absorption Fine Structure Studies of InGaN Epilayers E3.30
V. Katchkanov, K.P. O'Donnell, J.F.W. Mosselmans, S. Hernandez, R.W. Martin, Y. Nanishi, M. Kurouchi, I. Watson, W. Van der Stricht, and E. Calleja
X-ray Excited Optical Luminescence Studies of InGaN and Rare-Earth Doped GaN Epilayers E3.31
V. Katchkanov, J.F.W. Mosselmans, K.P. O'Donnell, N.R.J. Poolton, and S. Hernandez
Growth and Characterization of InGaN/GaN LEDs on Corrugated Interface Substrate Using MOCVD E3.32
Sunwoon Kim, Jeong Tak Oh, Kyu Han Lee, Dong Joon Kim, Je Won Kim, Yong Chun Kim, and Jeong Wook Lee
The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates E3.33
K.Y. Zang, S.J. Chua, C.V. Thompson, L.S. Wang, S. Tripathy, and S.Y. Chow
Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111) E3.35
I. Gherasoiu, S. Nikishin, G. Kipshidze, B. Borisov, A. Chandolu, M. Holtz, and H. Temkin
Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures E3.38
Y. Xia, E. Williams, Y. Park, I. Yilmaz, J.M. Shah, E.F. Schubert, and C. Wetzel
Optimization of p-type AlGaN/GaN and GaN/InGaN Superlattice Design for Enhanced Vertical Transport E3.39
M.Z. Kauser, A. Osinsky, J.W. Dong, B. Hertog, A. Dabiran, and P.P. Chow
Influence of Mis-Orientation of C-Plane Sapphire Substrate on the Early Stages of MOCVD Growth of GaN Thin Films E3.40
Seong-woo Kim, Hideo Aida, and Toshimasa Suzuki
Thermally Stable Transparent Ru-Si-O Schottky Contacts for n-Type GaN and AlGaN E3.41
E. Kaminska, A. Piotrowska, K. Golaszewska, R. Lukasiewicz, A. Szczesny, E. Kowalczyk, P. Jagodzinski, M. Guziewicz, A. Kudla, A. Barcz, and R. Jakiela
Probing the Formation of Two-Dimensional Electron Gas in AlInGaN/ GaN Heterostructures by Photoluminescence Spectroscopy E3.43
C.B. Soh, W. Liu , S.J. Chua, S. Tripathy, and D.Z. Chi
MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Between N-Polarity and In-Polarity Growth Processes E4.1
Akihiko Yoshikawa, Yoshihiro Ishitani, Song-Bek Che, Ke Xu, Xinqiang Wang, Masayoshi Yoshitani, Wataru Terashima, and Naoki Hashimoto
Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE E4.2
Daisuke Muto, Ryotaro Yoneda, Hiroyuki Naoi, Masahito Kurouchi, Tsutomu Araki, and Yasushi Nanishi
RF-MBE Growth of InN Dots on N-Polar GaN Grown on Vicinal c-Plane Sapphire E4.4
Naoki Hashimoto, Naohiro Kikukawa, Song-Bek Che, Yoshihiro Ishitani, and Akihiko Yoshikawa
Mechanisms of Raman Scattering in Doped Indium Nitride E4.8
Claire Pinquier, François Demangeot, Jean Frandon, Miguel Gaio, Olivier Briot, Bénédicte Maleyre, Sandra Clur-Ruffenach, and Bernard Gil
Micro-Photoluminescence Studies of Excitonic and Multiexcitonic States of Quantum Dot-Like Localization Centers in InGaN/GaN Structures E5.3
K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt, C. Roder, and D. Hommel
Carbon-Related Deep States in Compensated n-Type and Semi-Insulating GaN:C and Their Influence on Yellow Luminescence E5.7
A. Armstrong, D. Green, A.R. Arehart, U.K. Mishra, J.S. Speck, and S.A. Ringel
Near Field Optical Spectroscopy of GaN/AlN Quantum Dots E5.8
A. Neogi, B.P. Gorman, H. Morkoç, T. Kawazoe, M. Ohtsu, and M. Kuball
Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells E5.9
D. Fuhrmann, T. Retzlaff, U. Rossow, and A. Hangleiter
Oxygen Related Shallow Acceptor in GaN E5.10
B. Monemar, P.P. Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama , H. Amano, I. Akasaki, and S. Kimura
Photoluminescence Study of Plastically Deformed GaN E5.11
I. Yonenaga, H. Makino, S. Itoh , T. Goto, and T. Yao
AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device E6.3
Seikoh Yoshida, Nariaki Ikeda, Jiang Li, Kohji Hataya, Takahiro Wada, and Hironari Takehara
AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF Stability E6.4
Alexei Koudymov, Salih Saygi, Naveen Tipirneni, Grigory Simin, Vinod Adivarahan, Jinwei Yang, and M. Asif Khan
Normally-Off Operation GaN HFET Using a Thin AlGaN Layer for Low Loss Switching Devices E6.5
Nariaki Ikeda, Kazuo Kato, Jiang Li, Kohji Hataya, and Seikoh Yoshida
Surface Stabilization for Higher Performance AlGaN/GaN HEMT With In Situ MOVPE SiN E6.7
M. Germain, M. Leys, J. Derluyn, S. Boeykens, S. Degroote, W. Ruythooren, J. Das, R. Vandersmissen, D.P. Xiao, W. Wang, and G. Borghs
The Ga-Nitride/Air Two-Dimensional Photonic Quasi-Crystals Fabricated on GaN-Based Light Emitters E7.4
Bei Zhang, ZhenSheng Zhang, Jun Xu, Qi Wang, ZhiJian Yang, WeiHua Chen, XiaoDong Hu, ZhiXin Qin, GuoYi Zhang, and DaPeng Yu
High Quality, Low Cost Continuous Poly-GaN Film on Si and Glass Substrates Produced by Spin Coating E8.2
Huaqiang Wu, Athanasios Bourlinos, Emmanuel P. Giannelis, and Michael G. Spencer
The Intrinsic Free Carrier Mobility in AlGaN/GaN Quantum Wells E8.6
F. Carosella, M.Germain, and J.-L. Farvacque
Reduction of Threading Dislocations in GaN Grown on ‘c' Plane Sapphire by MOVPE E8.8
R. Datta, M.J. Kappers, J.S. Barnard, and C.J. Humphreys
Microstructure of Highly p-Type Doped GaN Sub-Contact Layers for Low-Resistivity Contacts E8.10
R. Kröger, J. Dennemarck, T. Böttcher, S. Figge, and D. Hommel
Cathodoluminescence of Praseodymium Doped AlN, GaN and Turbo Static BN E8.12
Muhammad Maqbool, H.H. Richardson, and M.E. Kordesch
Strong Room Temperature 510 nm Emission From Cubic InGaN/GaN Multiple Quantum Wells E8.15
S.F. Li, D.J. As, K. Lischka, D.G. Pacheco-Salazar, L.M.R. Scolfaro, J.R. Leite, F. Cerdeira, and E.A. Meneses
High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress E8.18
T. Paskova, T. Suski, M. Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, and D. Hommel
Comparison of the Effect of Gate Dielectric Layer on 2DEG Carrier Concentration in Strained AlGaN/GaN Heterostructure E8.20
W. Wang, J. Derluyn, M. Germain, I. Dewolf, M. Leys, S. Boeykens , S. Degroote, W. Ruythooren, J. Das, D. Schreurs, B. Nauwelaers, and G. Borghs
X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds E8.23
Balaji Raghothamachar, Michael Dudley, Buguo Wang, Michael Callahan, David Bliss, Phanikumar Konkapaka, Huaqiang Wu, and Michael Spencer
Synchrotron White Beam X-ray Topography (SWBXT) and High Resolution Triple Axis Diffraction Studies on AlN layers Grown on 4H- and 6H-SiC Seeds E8.24
Balaji Raghothamachar, Michael Dudley, Rafael Dalmau, Raoul Schlesser, and Zlatko Sitar
P-Type GaN Epitaxial Layers and AlGaN/GaN Heterostructures With High Hole Concentration and Mobility Grown by HVPE E8.28
A. Usikov, O. Kovalenkov, V. Ivantsov, V. Sukhoveev, V. Dmitriev, N. Shmidt, D. Poloskin, V. Petrov, and V. Ratnikov
Impact of H2-Preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer E8.30
Michinobu Tsuda, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki
Low-Frequency Noise Characterization in AlGaN/GaN HEMTs With Varying Gate Recess Depths E8.31
Shrawan. K. Jha, Bun. H. Leung, Charles C. Surya, Heins Schweizer, and Manfred. H. Pilkhuhn
Influence of Substrate Misorientation Angle and Direction in Growth of GaN on Off-Axis SiC (0001) E8.34
Jun Suda, Yuki Nakano, and Tsunenobu Kimoto
Molecular Beam Epitaxy of GaN on Lattice-Matched ZrB2 Substrates Using Low-Temperature GaN and AlN Nucleation Layers E8.36
Rob Armitage, Kazuhiro Nishizono, Jun Suda, and Tsunenobu Kimoto
Self-Organized GaN/AlN Superlattice Nanocolumn Crystals Grown by RF-MBE E8.39
Kouji Yamano, Akihiko Kikuchi, and Katsumi Kishino
Spintronics in Nitrides E9.1
Tomasz Dietl
Evidence of Carrier Mediated Ferromagnetism in GaN:Mn/GaN:Mg Heterostructures E9.2
F. Erdem Arkun, Mason J. Reed, Erkan Acar Berkman, Nadia A. El-Masry, John M. Zavada, M. Oliver Luen, Meredith L. Reed, and Salah M. Bedair
Synthesis and Properties of GaxMn1-xN Films E9.3
R. Zhang, Y.Y. Yu, X.Q. Xiu, Z.L. Xie, S.L .Gu, B. Shen, Y. Shi, and Y.D. Zheng
Impact of Manganese Incorporation on the Structural and Magnetic Properties of MOCVDGrown Ga1-xMnxN E9.4
Matthew H. Kane, Ali Asghar, Martin Strassburg, Qing Song, Adam M. Payne, Christopher J. Summers, Z. John Zhang, Nikolaus Dietz, and Ian T. Ferguson
Optical and Structural Investigations on Mn-Ion States in MOCVD-Grown Ga1-xMnxN E9.5
Martain Strassburg, Jayantha Senawiratne, Christoph Hums, Nikolaus Dietz, Matthew H. Kane, Ali Asghar, Christopher J. Summers, Ute Haboeck, Axel Hoffmann, Dmitry Azamat, Wolfgang Gehlhoff, and Ian T. Ferguson
Aquamarine Luminescence Band in Undoped GaN E9.8
M.A. Reshchikov, L. He, R.J. Molnar, S.S. Park , K.Y. Lee, and H. Morkoç
Advances in AlGaN-based Deep UV LEDs E10.1
M.H. Crawford, A.A. Allerman, A.J. Fischer, K.H.A. Bogart, S.R. Lee, W.W. Chow, S. Wieczorek, R.J. Kaplar, and S.R. Kurtz
Development of Dual MQW Region LEDs for General Illumination E10.3
David Brackin Nicol, Ali Asghar, Martin Strassburg, My Tran, Ming Pan, Hun Kang, Ian T. Ferguson, Mustafa Alevi, Jayantha Senawiratne, Christoph Hums, Nikolaus Dietz, and Axel Hoffmann
Electro-Optic and Thermal Studies of Multi-Quantum Well Light Emitting Diodes in InGaN/GaN/Sapphire Structure E10.4
Jeong Park, Moo Whan Shin, and Chin C. Lee
Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2, (3038) 4H-SiC and r-Faced Sapphire E10.6
Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, and Isamu Akasaki
Efficient and Reliable Homoepitaxially-Grown InGaN-Based Light-Emitting Diodes E10.7
X.A. Cao, J.M. Teetsov, S.F. LeBoeuf, S.D. Arthur, and J. Kretchmer
Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes With Optical and Electrical Time-Resolved Techniques E10.9
R.J. Kaplar, S.R. Kurtz, D.D. Koleske, A.A. Allerman, A.J. Fischer, and M.H. Crawford
Grain Expansion and Subsequent Seeded Growth of AlN Single Crystals E11.1
Dejin Zhuang, Raoul Schlesser, and Zlatko Sitar
Optimization of Growth and Activation of Highly Doped p-Type GaN for Tunnel Junctions E11.2
David B. Nicol, Ali Asghar, My Tran, Dhairya Mehta, and Ian T. Ferguson
Sublimation Growth of AlN Bulk Crystals by Seeded and Spontaneous Nucleation Methods E11.3
Krishnan Balakrishnan, Masao Banno, Kiyotaka Nakano, Go Narita, Noritaka Tsuchiya, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Kenji Shimono, Tadashi Noro, Takashi Takagi, Hiroshi Amano, and Isamu Akasaki
Resonant-Raman Scattering of ZnO Crystallites: The Quasi Nature of the LO Mode E11.5
Xiang-Bai Chen, John L. Morrison, Jesse Huso, Jonathan G. Metzger, Leah Bergman, and Shlomo Efrima
Direct AFM Observation of Strain Effects on MOCVD-Grown GaN Epilayer Surface Morphology E11.6
D.I. Florescu, D.S. Lee, J.C. Ramer, V.N. Merai, A. Parekh, D. Lu, E.A. Armour, and W.E. Quinn
Optical Characteristics of Amorphous III-V Nitride Thin Films E11.7
Jebreel M. Khoshman and Martin E. Kordesch
High-Frequency Generation in Low-Mobility Superlattices E11.9
Vladimir Litvinov and Alexander Manasson
Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by MOVPE E11.11
S.M. Hubbard, G. Zhao, D. Pavlidis, E. Cho, and W. Sutton
Pressure Dependence of Elastic Constants in Wurtzite and Zinc-Blende Nitrides and Their Influence on the Optical Pressure Coefficients in Nitride Heterostructures E11.13
Slawomir P. Lepkowski and Jacek A. Majewski Modeling of Elastic, Piezoelectric and Optical Properties of Vertically Correlated GaN/AlN Quantum Dots E11.14
Slawomir P. Lepkowski, Grzegorz Jurczak, Pawel Dluzewski, and Tadeusz Suski
Compositional Ordering in InxGa1-xN and Its Influence on Optical Properties E11.19
Z. Liliental-Weber, D.N. Zakharov , K.M. Yu, J. Wu, S.X. Li, J.W. Ager III, W. Walukiewicz, E.E. Haller,H. Lu, and W. J. Schaff
Transmission Electron Microscopy Study of an Epitaxial Gate Oxide on III-N Semiconductor Structures E11.21
Yoga.N. Saripalli, X-Q Liu, D.W. Barlage, M.A.L. Johnson, D. Braddock, N.A. Stoddard, and A. Chugh
Fabrication of Silicon Nitride Film Using Pure Nitrogen Plasma Generated Near Atmospheric Pressure for III-V Semiconductor Fabrication E11.23
R. Hayakawa, T. Yoshimura, M. Nakae, T. Uehara, A. Ashida, and N. Fujimura
A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth E11.29
M.E. Twigg, N.D. Bassim, C.R. Eddy, R.L. Henry, R.T. Holm, and M.A. Mastro
Group III Nitrides Grown on 4H-SiC ( 3038 ) Substrate by Metal-Organic Vapor Phase Epitaxy E11.31
Akira Honshio, Tsukasa Kitano, Masataka Imura, Yasuto Miyake, Hideki Kasugai, Kazuyoshi Iida, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Hiroyuki Kinoshita, and Hiromu Shiomi
Electroluminescence From GaInN Quantum Wells Grown on Non-(0001) Facets on Selectively Grown GaN Stripes E11.32
Barbara Neubert, Frank Habel, Peter Brückner, Ferdinand Scholz, Till Riemann, and Jürgen Christen
Growth and Characterization of Bulk GaN by Ga Vapor Transport E11.33
Phanikumar Konkapaka, Huaqiang Wu, Yuri Makarov, and Michael G. Spencer
Self-Oriented Growth of GaN Films on Molten Gallium E11.34
Hongwei Li, Hari Chandrasekaran, Mahendra K Sunkara, Ramon Collazo, Zlatko Sitar, Michael Stukowski, and Krishna Rajan
Electrical and Optical Properties of 1 MeV-Electron Irradiated AlxGa1-xN E11.35
Michael R. Hogsed, Mo Ahoujja, Mee-Yi Ryu, Yung Kee Yeo, James C. Petrosky, and Robert L. Hengehold
Comparative Study of GaN Based Light Emitting Devices Grown on Sapphire and GaN Substrates E11.36
Stephan Figge, Jens Dennemarck, Gabriela Alexe, and Detlef Hommel
Relationship of Basal Plane and Prismatic Stacking Faults in GaN to Low Temperature Photoluminescence Peaks at ~3.4 eV and ~3.2 eV E11.37
J. Bai, M. Dudley, L. Chen, B.J. Skromme, P.J. Hartlieb, E. Michaels, J.W. Kolis, B. Wagner, R.F. Davis, U. Chowdhury, and R.D. Dupuis
Growth of GaN from Elemental Gallium and Ammonia via Modified Sandwich Growth Technique E11.38
E. Berkman, R. Collazo, R. Schlesser, and Z. Sitar
Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light Emitting Diode E11.41
Kristin L. Bunker, Roberto Garcia, and Phillip E. Russell
Non-Polar GaN/AlN Superlattices on A-Plane AlN (500nm) Buffer Layers Grown by RF-MBE E11.43
Takayuki Morita, Akihiko Kikuchi, and Katsumi Kishino
Optical Properties of II-IV-N2 Semiconductors E11.45
John Muth, Ailing Cai, Andrei Osinsky, Henry Everitt, Ben Cook, and Ivan Avrutsky
Vapor-Liquid-Solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition E12.4
J. Su, M. Gherasimova, G. Cui, J. Han, S. Lim, D. Ciuparu, L. Pfefferle, Y. He, A.V. Nurmikko, C. Broadbridge, A. Lehman, T. Onuma, M. Kurimoto, and S.F. Chichibu
A Nucleation Study of GaN Multifunctional Nanostructures E12.7
Shalini Gupta, Hun Kang, Martin Strassburg, Ali Asghar, Jayantha Senawiratne, Nikolaus Dietz, and Ian T. Ferguson
Effect of the Polar Surface on GaN Nanostructure Morphology and Growth Orientation E12.8
C.Y. Nam, D. Tham, and J.E. Fischer
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