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| Suggested format for citation of papers in this volume: |
| List all author names: Title of article, in Materials and Processes for Nonvolatile Memories, edited by A. Claverie, D. Tsoukalas, T-J. King, and J.M. Slaughter (Mater. Res. Soc. Symp. Proc. 830, Warrendale, PA , 2005), insert paper number. |
Future Directions of Non-Volatile Memory Technologies D1.1
Albert Fazio
Non Volatile Memory Technologies: Floating Gate Concept Evolution D1.2
Cesare Clementi and Roberto Bez
Lateral Distribution of Electrons Trapped in Nitride Layers D1.3
M. Lorenzini, M. Rosmeulen, L. Breuil, L. Haspeslagh, J. Van Houdt, and K. De Meyer
Integration and Performance Improvements of Silicon Nanocrystal Memories D1.5
T. Hiramoto, I. Kim, M. Saitoh, and K. Yanagidaira
Optimization and Simulation of an Alternative Nano-Flash Memory: The SASEM Device D1.6
C. Krzeminski, E. Dubois, X. Tang, N. Reckinger, A. Crahay, and V. Bayot
Influence of Thermal Treatments on the Chemistry and Self-Assembly of Ge Nanoparticles on SiO2 Surfaces D1.8
Scott K. Stanley, Shawn S. Coffee, and John G. Ekerdt
Low Voltage and High Speed Silicon Nanocrystal Memories D1.9
Josep Carreras, B. Garrido, J. Arbiol, and J.R. Morante
Ferroelectric Thin Film Depositions for Various Types of FeRAMs (Ferroelectric Random Access Memories) D2.1
Yoshihisa Fujisaki and Hiroshi Ishiwara
Step Coverage and Composition of Pb(Zr,Ti)O3 Capacitors Prepared on Sub-Micron Three-Dimensional Trench Structure by Metalorganic Chemical Vapor Deposition D2.2
Atsushi Nagai, Gouji Asano, Jun Minamidate, Chel Jong Choi, Choong-Rae Cho, Youngsoo Park, and Hiroshi Funakubo
d-Nb-Doping Effect to The Interface Between IrO2 Top Electrode and Pb(Zr,Ti)O3 by Metal Organic Chemical Vapor Deposition D2.3
Osamu Matsuura, Hideki Yamawaki, Masaki Nakabayashi, Yoshimasa Horii, and Yoshihiro Sugiyama
Quantifying the Role of Electronic Charge Trap States on Imprint Behavior in Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) Thin Films D2.4
Connie Lew and Michael O. Thompson
Ferroelectric 1-T Memory Device-Will It be Viable for Nonvolatile Memory Applications? D2.5
Jin-Ping Han
Non-Volatile Thin Film Transistors Using Ferroelectric/ITO Structures D2.6
Eisuke Tokumitsu, Takaaki Miyasako, and Masaru Senoo
Long Time Data Retention and a Mechanism in Ferroelectric-Gate Field Effect Transistors With HfO2 Buffer Layer D2.9
Koji Aizawa, Yoshihito Kawashima, and Hiroshi Ishiwara
Device Structures and Charicterization of One Transistor Ferroelectric Memory Devices D2.10
Tingkai Li, Sheng Teng Hsu, Bruce Ulrich, and Dave Evans
Improvement of Ferroelectric and Electrical Properties of Sol-Gel Deposited Bi4Ti3O12 Thin Films by Multiple Rapid Thermal Annealing Techniques D3.1
Hua Wang and Minfang Ren
Characterization of MFMIS and MFIS Structures for Non-Volatile Memory Applications D3.2
Mosiur Rahman, T.S. Kalkur, Shunming Sun, Fred P. Gnadinger, David Dalton, Daesig Kim, Viorel Olariu, and David Klingensmith
Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-Substitution Using Rare-Earth Cations D3.3
Hiroshi Nakaki, Hiroshi Uchida, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo, and Seiichiro Koda
Perfectly c-Axis Oriented Epitaxial Lead Titanate Thin Film Deposited by a Hydrothermal Method for a Data Storage Medium D3.4
Takeshi Morita and Yasuo Cho
Switching Properties of PST Ferroelectric Films for Memory Applications Using Conductive Oxide LSCO Electrodes D3.5
E. Martínez, O. Blanco, and J.M. Siqueiros
Excimer (XeCl) Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature for TFT FeRAM Application D3.6
W.X. Xianyu, H.S. Cho, J.Y. Kwon, H.X. Yin, and T. Noguchi
Development of Nonvolatile Memory Using Well-Ordered Ferroelectric Linear Molecules D3.9
Kenji Ishida, Kazunari Katsumoto, Shuichiro Kuwajima, Toshihisa Horiuchi, Hirofumi Yamada, and Kazumi Matsushige
Dielectric and Fatigue Properties of Pb(Zr0.53Ti0.47)O3 Thin Films Prepared From Oxide Precursors Method D3.12
Silvia T. Shibatta-Kagesawa, C.A. Guarany, E.B. Araújo, and N. Oki
UV Assisted Rapid Thermal Processing of Strontium Bismuth Tantalate (SBT) Thin Films D3.18
S. O'Brien, P.K. Hurley, G.M. Crean, J. Johnson, C. Caputa, and D. Wouters
Thin Ferroelectric Film Between Double Schottky Barriers D3.19
Lyuba A. Delimova, Igor V. Grekhov, Dmitri V. Mashovets, Sangmin Shin, June-Mo Koo, Suk-Pil Kim, and Youngsoo Park
Reliability of 4-Mbit Toggle MRAM D4.1/I7.1
Johan Åkerman, Philip Brown, Brian Butcher, Renu Dave, Mark DeHerrera, Mark Durlam, Brad Engel, Earl Fuchs, Mark Griswold, Greg Grynkewich, Jason Janesky, John Martin, Joseph Nahas, Srinivas Pietambaram, Nick Rizzo, Jon Slaughter, Ken Smith, Ji-Jun Sun, and Saied Tehrani
Semiconductor Nanocrystal Floating-Gate Memory Devices D5.1
P. Dimitrakis and P. Normand
Manipulation of 2D Arrays of Si Nanocrystals by Ultra-Low-Energy Ion Beam-Synthesis for Nonvolatile Memories Applications D5.2
C. Bonafos, N. Cherkashin, M. Carrada, H. Coffin, G. Ben Assayag, S. Schamm, P. Dimitrakis, P. Normand, M. Perego, M. Fanciulli, T. Muller, K.H. Heinig, A. Argawal, and A. Claverie
Characterization of Number Fluctuations in Gate-Last Metal Nanocrystal Nonvolatile Memory Array Beyond 90 nm CMOS Technology D5.4
Chungho Lee, Udayan Ganguly, and Edwin C. Kan
Reliable, Fast and Long Retention Si Nanocrystal Non-Volatile Memories D5.5
Josep Carreras, B. Garrido, J. Arbiol, and J. R. Morante
Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories D5.6
Rosaria A. Puglisi, Giuseppe Nicotra, Salvatore Lombardo, Barbara De Salvo, and Cosimo Gerardi
A Model of Silicon Nanocrystal Nucleation and Growth on SiO2 by CVD D5.7
M.W. Stoker, T.P. Merchant, R. Rao, R. Muralidhar, S. Straub, and B.E. White Jr.
Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures D5.9
Seiichi Miyazaki, Taku Shibaguchi, and Mitsuhisa Ikeda
Improved Size Dispersion of Silicon Nanocrystals Grown in a Batch LPCVD Reactor D6.1
Y.M. Wan, K.van der Jeugd, T.Baron, B. De Salvo, and P.Mur
Ge Nanocrystals in MOS-Memory Structures Produced by Molecular-Beam Epitaxy and Rapid-Thermal Processing D6.2
A. Nylandsted Larsen, A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, P. Normand, P. Dimitrakis, D. Tsoukalas, N. Cherkashin, and A. Claverie
Chemical Vapor Deposition of Germanium Nanocrystals on Hafnium Oxide for Non-Volatile Memory Applications D6.3
Ying Qian Wang, Jing Hao Chen, Won Jong Yoo, and Yee-Chia Yeo
Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface D6.4
Ch. Sargentis, K. Giannakopoulos, A. Travlos, and D. Tsamakis
Oxidation of Si Nanocrystals Fabricated by Ultra-Low Energy Ion Implantation in Thin SiO2 Layers D6.6
H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin , M. Respaud, G. Ben Assayag, P. Dimitrakis, P. Normand, M. Tencé, C. Colliex, and A. Claverie
Gold Langmuir-Blodgett Deposited Nanoparticles for Non-Volatile Memories D6.7
S. Kolliopoulou, D. Tsoukalas, P. Dimitrakis, P. Normand, S. Paul, C. Pearson, A. Molloy, and M.C. Petty
Small "Magnetic" Clusters of Ga and In With As and V D6.12
Liudmila A. Pozhar, Alan T. Yeates, Frank Szmulowicz, and William C. Mitchel
Search for Magnetism in Co and Fe-Doped HfO2 Thin Films for Potential Spintronic Applications D6.13
M.S.R. Rao, Darshan C. Kundaliya, S. Dhar, C.A. Cardoso, A. Curtin, S.J. Welz, R. Erni, N.D. Browning, S.E. Lofland, C.J. Metting, S.B. Ogale, and T. Venkatesan
Growth Temperature and Properties of Ge4Sb3Te3 Films D6.14
W.D. Song , L.P. Shi, X.S. Miao, X. Hu, H.K. Lee, R. Zhao, J.F. Chong, and T.C. Chong
Preparation of Strontium Bismuth Tantalate Thin Film by Liquid-Delivery Metalorganic Chemical Vapor Deposition D6.17
M. Silinskas, M. Lisker, B. Kalkofen, S. Matichyn, B. Garke, and E. Burte
All-Organic Single-Transistor Permanent Memory Device D6.19
Raoul Schroeder, Leszek A. Majewski, Monika Voigt, and Martin Grell
Enhanced Spontaneous Polarization of Dysprosium-Substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method D6.21
Hiroshi Uchida, Hiroshi Nakaki, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo, and Seiichiro Koda
Polymer Electrical Bistable Device and Memory Cells D7.1
Jianyong Ouyang, Chih-Wei Chu, Ankita Prakash, and Yang Yang
Prospect of Emerging Nonvolatile Memories D7.6
Hongsik Jeong and Kinam Kim
Effect of the Bottom Electrode Contact (BEC) on the Phase Transformation of N2 Doped Ge2Sb2Te5 (N-GST) in a Phase-Change Random Access Memory D7.9
Suyoun Lee, Y.J. Song, Y.N. Hwang, S.H. Lee, J.H. Park, K.C. Ryoo, S.J. Ahn, C.W. Jeong, J.H. Oh, J.M. Shin, F. Yeung, W.C. Jeong, Y.T. Kim, J.B. Park, K.H. Koh, G.T. Jeong, H.S. Jeong, and Kinam Kim
Non-Volatile Giant Resistance Switching in Metal-Insulator-Manganite Junctions D7.10
Rickard Fors, Sergey I. Khartsev, and Alexander M. Grishin
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