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2004 FALL MEETING PROCEEDINGS
Symposium B
Progress in Compound Semiconductor Materials IV—Electronic and Optoelectronic Applications
Editors: Gail J. Brown, Robert M. Biefeld, Claire Gmachl, M. Omar Manasreh, Karl Unterrainer
MRS Proceedings Volume 829
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| List all author names: Title of article, in Progress in Compound Semiconductor Materials IV—Electronic and Optoelectronic Applications, edited by Gail J. Brown, Robert M. Biefeld, Claire Gmachl, M. Omar Manasreh, and Karl Unterrainer (Mater. Res. Soc. Symp. Proc. 829, Warrendale, PA , 2005), insert paper number. |
Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots Grown on InP Substrates by MOCVD B1.2
Yongkun Sin, Hyun I. Kim, Gary W. Stupian, and Yueming Qiu
Quantum-Dot Molecules for Potential Applications in Terahertz Devices B1.3
Valeria Gabriela Stoleru, Elias Towe, Chaoying Ni, and Debdas Pal
(110) InAs Quantum Dots: Growth, Single-Dot Luminescence and Cleaved Edge Alignment B1.5
D. Wasserman, E.A. Shaner, S.A. Lyon, M. Hadjipanayi, A.C. Maciel, and J.F. Ryan
The Definition of Multiple Bandgaps in Quantum-Dot Material by Intermixing B1.6
A. Catrina Bryce, John H. Marsh, Dan A. Yanson, Olek P. Kowalski, and Shin-Sung Kim
Optical Characterization of Hierarchically Self-Assembled GaAs/AlGaAs Quantum Dots B1.7
F.Marabelli, A.Rastelli, O.G. Schmidt, G.Beaurin, M.Geddo, and G.Guizzetti
Thermal Stability of InGaAs Quantum Dots Under Large Temperature Transients B1.9
R. Rangarajan, V.C. Elarde, and J.J. Coleman
Structural and Optical Effects of Capping Layer Material and Growth Rate on the Properties of Self-Assembled InAs Quantum Dot Structures B2.1
Gabriel Agnello, Vadim Tokranov, Michael Yakimov, Matthew Lamberti, Yuegui Zheng, and Serge Oktyabrsky
Vertical and In-Plane Electrical Transport in InAs/InP Semiconductor Nanostructures B2.3
K.O. Vicaro, J.R.R. Bortoleto, H.R. Gutiérrez, L. Nieto, A.A.G. von Zuben, A.C. Seabra, P.A. Schulz, and M.A. Cotta
Structural Investigation of InAs/InGaAs/InP Nanostructures: Origin and Stability of Nanowires B2.4
L. Nieto, H.R. Gutiérrez, J.R.R. Bortoleto, R. Magalhães-Paniago, and M.A. Cotta
Electric Field Enhancement of Dark Current Generation in Detectors B2.7
James P. Lavine
Longitudinal Modes in InAlGaAs/AlGaAs High-Power Laser Diodes B2.8
B.S. Passmore, Y.C. Chua, M.O. Manasreh, and J.W. Tomm
Heterostructures With Strained InGaAs Quantum Wells for RCE Photodiode Applications in the 1.8-2 µm Spectral Range B2.9
Jadwiga Zynek, Agata Jasik, Jaroslaw Gaca, Marek Wojcik, Wlodzimierz Strupinski, Jaroslaw Rutkowski, Artur Wnuk, and Krzysztof Klima
Good Temperature Performances of 870 nm Resonant Cavity Light Emitting Diode (RCLED) B2.10
Lih-Wen Laih, Yi-Hao Wu, Li-Hong Laih, Rong-Moo Hong, Hao-Chung Guo, Jung-Lung Yu, Yu-Hsiang Huang,Yi-An Chang, Ren-Jiun Chang, Chun-Hui Yang, and I-Tsung Wu
Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes B2.11
M.A. Awaah, R. Nana, and K. Das
Application of Low Temperature InP Wafer Bonding Towards Optical Add/Drop Multiplexer Realization B2.14
J. Arokiaraj, S. Vicknesh, and A. Ramam
Short-Period Strain-Balanced GaAs1-x Nx/InAs(N) Superlattices Lattice-Matched to InP(001): A New Material for 0.4-0.6 eV Mid IR Applications B2.18
L. Bhusal, A. Alemu, and A. Freundlich
The Er3+ and Yb3+-Related Emission From Er,Yb Co-Implanted Al0.70Ga0.30As/GaAs Substrates Prepared MOCVD Method B2.19
Tomoyuki.Arai and Shin-ichiro Uekusa
Annealing Effects of ZnO Nanorods on DC Inorganic Electroluminescent Device Characteristics B2.20
Shinya Sasaki, Hiroshi Miyashita, Takashi Kimpara, Tomomasa Satoh, and Takashi Hirate
Zinc Oxide Nanocluster Formation by Low Energy Ion Implantation B2.21
I. Muntele, P. Thevenard, C. Muntele, B. Chhay, and D. Ila
Fabrication of ZnO Coated ZnS:Mn2+ Nanoparticles B2.22
Shinji Ishizaki, Yusuke Kusakari, and Masakazu Kobayashi
Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition B2.25
S.P. Heluani, G. Simonelli, M. Villafuerte, G. Juarez, A. Tirpak, G. Braunstein, and F. Vignolo
Growth and Characterization of ZnO Nanonail B2.26
H.W. Seo, D. Wang, Y. Tzeng, N. Sathitsuksanoh, C.C. Tin, M.J. Bozack, J.R. Williams, and M. Park
Synthesis and Characterization of ZnO Nanoparticles B2.27
I.U. Abhulimen, X.B. Chen, J.L. Morrison, V.K. Rangari, L. Bergman, and K. Das
Intersubband Transitions in GaN/AlxGa1-xN Multi Quantum Wells B2.29
E.A. DeCuir Jr., Y.C. Chua, B.S. Passmore, J. Liang,, M.O. Manasreh, J. Xie, H. Morkoc, A. Asghar, I.T. Ferguson, and A. Payne
Electrical and Dielectric Behavior of Pb(Mg1/4Ni1/4W1/2)O3 Ceramics B2.32
Adolfo Franco Júnior
Preparation and Luminescent Properties of SrS:Ce by Addition of Sulphur as a Co-Activator in SrSO4:Ce(SO4)2.4H2O by Carbothermal Reduction B2.33
P.Thiyagarajan, M.Kottaisamy, K.Sethupathi, and M.S.R. Rao
InAs Quantum Dots for Optoelectronic Device Applications B3.4
K. Stewart, S. Barik, M. Buda, H.H. Tan, and C. Jagadish
Superfluorescence of Ion Beam Synthesized Dense-Packed Embedded CdSe Nanoclusters B3.5
H. Karl, I. Großhans, P. Huber, and B. Stritzker
Synthesis of Highly Photoluminescent CdTe Nanocrystals and Their Incorporation Into Glass Matrices B3.6
Norio Murase and Chunliang Li
The General Synthesis of Nanostructured V/VI Semiconductors B3.8
Paul Christian and Paul O'Brien
Ultrashort Pulse Generation With Semiconductor Modelocked Lasers Using Saturable Absorbers Based on Intersubband Transitions in GaN/AlGaN Quantum Wells B4.1
Faisal R. Ahmad, Paul George, Jahan Dawlaty, Fahan Rana, and William J. Shaff
Spectroscopic Analysis of External Stresses in Semiconductor Quantum-Well Materials B4.4
Jens W. Tomm, Mark L. Biermann, B.S. Passmore, M.O. Manasreh, A. Gerhardt, and Tran Q. Tien
Processing of Deeply Etched GaAs/AlGaAs Quantum Cascade Lasers With Grating Structures B5.2
S. Golka, M. Austerer, C. Pflügl, W. Schrenk, and G. Strasser
Zener Tunneling of Light in an Optical Superlattice B5.8
Mher Ghulinyan, Zeno Gaburro, Lorenzo Pavesi, Claudio J. Oton, Costanza Toninelli, and Diederik S. Wiersma
Correlation Between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors B6.2
Hiroki Sugiyama, Yasuhiro Oda, Haruki Yokoyama, Takashi Kobayashi, Masahiro Uchida, and Noriyuki Watanabe
Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates B6.3
K. Krishnaswami, D.B. Fenner, S.R. Vangala, C. Santeufemio, M. Grzesik, L.P. Allen, G. Dallas, and W.D. Goodhue
Improved Performance of GaSb-Based MIR Photodetectors Through Electrochemical Passivation in Sulphur Containing Solutions B6.8
A. Piotrowska, E. Papis, K. Golaszewska, R. Lukasiewicz, E. Kaminska, T.T. Piotrowski, R. Kruszka, A. Kudla, J. Rutkowski, J. Szade, A. Winiarski, A. Wawro, and M. Aleszkiewicz
High Speed Ge Photodetectors on Si Platform for GHz Optical Communications in C+L Bands B6.9
Jifeng Liu, Jurgen Michel, Douglas D. Cannon, Wojciech Giziewicz, D. Pan, David T. Danielson, Samerkhae Jongthammanurak, John Yasaitis, Kazumi Wada, Clifton G. Fonstad, and Lionel C. Kimerling
High Quality MPCVD Epitaxial Diamond Film for Power Device Application B7.2
Jie Yang, Weixiao Huang, T.P. Chow, and James E. Butler
Prospect for III-Nitride Heterojunction MOSFET Structures and Devices B7.7
M.A.L. Johnson, D.W. Barlage, and Dave Braddock
First-Principles Calculation of Electron Mobilities in Ultrathin SOI MOSFETs B7.10
Matthew H. Evans, Xiaoguang Zhang, John D. Joannopoulos, and Sokrates T. Pantelides
Nickel Silicide Work Function Tuning Study in Metal-Gate CMOS Applications B7.11
Jun Yuan, Grant Z. Pan, Yu-Lin Chao, and Jason C.S.Woo
Metal-Sxide Semiconductor Field-Effect Transistors using Single ZnO Nanowire B8.1
Young-Woo Heo, B.S. Kang, L.C. Tien, Y. Kwon, J.R. La Roche, B.P. Gila, F. Ren, S. J. Pearton, and D.P. Norton
Preparation of Ultraviolet Light Emitting ZnO Nanoparticles Via a Novel Synthesis Route B8.4
Yuntao Li, Richard D. Yang, S.Tripathy, H.-J. Sue, N. Miyatake, and R. Nishimura
ZnO Spintronics and Nanowire Devices B8.5
David P. Norton, Young-Woo Heo, L.C. Tien, M.P. Ivill, Y. Li, B.S. Kang, Fan Ren, J Kelly, A.F. Hebard, and Stephen Pearton
Electrical and Optical Properties of n-Type and p-Type ZnO B8.6
D.C. Look and B. Claflin
New Routes to Metal Chalcogenide Nanostructures B9.2
Paul Christian and Paul O'Brien
Properties of Gallium Selenide Doped With Sulfur B9.3
Valeriy G. Voevodin, Svetlana A. Bereznaya, Zoya V. Korotchenko, Aleksandr N. Morozov, Sergey Yu. Sarkisov, Nils C. Fernelius, and Jonathan T. Goldstein
Nominal PbSe Nano-Islands on PbTe: Grown by MBE, Analyzed by AFM and TEM B9.4
Peter Moeck, Mukes Kapilashrami, Arvind Rao, Kirill Aldushin, Jeahuck Lee, James E. Morris, Nigel D. Browning, and Patrick J. McCann
Optical Properties of CdSe and CdTe Nanoparticles Embedded in SiO2 Films B9.5
P. Babu Dayal, B.R. Mehta, and P.D. Paulson
New Electroluminescence Spectrum From Co-Doped ZnS:(Mn,Si) Films Prepared by Chemical Vapor Deposition With Laser Ablation B9.9
Makoto Ozawa, Tomomasa Satoh, and Takashi Hirate
Composition Dependence of the Judd-Ofelt Intensity Parameters in TeO2-PbF2 : Tm3+ Glasses B9.10
Idris Kabalci, GonulOzen, Adnan Kurt, and Alphan Sennaroglu
Growth and Crystal Structure of Alq3 Single Crystals . A New Structure Showing p-p and CH-p Interactions B9.11
Ali N. Rashid and Donald C. Craig
Preparation of Carbon Nano-Materials Using Arc Discharge in Liquid B9.17
Y. Suda, H. Kawasaki, T. Ohshima, S. Nakashima, S. Kawazoe, and T. Toma
Dopant Activation in Bulk Germanium and Germanium-on-Insulator B9.18
Y.-L. Chao, S. Prussin , J.C.S. Woo, and R. Scholz
Electronic and Optical Properties of SiGe Alloys Within First-Principles Schemes B9.20
G. Cappellini, G. Satta, M. Palummo, and G. Onida
Ab-Initio Calculations for the Electronic Spectra of Cubic and Hexagonal Boron Nitride B9.21
Guido Satta, Giancarlo Cappellini, Valerio Olevano, and Lucia Reining
Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO2 B9.22
Minoru Mitsui, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Yasuhiro Shiraki
Study of Germanium Diffusion in HfO2 Gate Dielectric of MOS Device Application B9.26
Qingchun Zhang, Nan Wu, L.K. Bera, and Chunxiang Zhu
Site-Specific Formation of Nanoporous Silicon on Micro-Fabricated Silicon Surfaces B9.27
Fung Suong Ou, Laxmikant V. Saraf, and Donald R. Baer
Beam Induced Lateral Epitaxy of GaAs on a GaAs/Si Template B9.30
Shigeya Naritsuka, Koji Saitoh, Toshiyuki Kondo, and Takahiro Maruyama
Novel Noncontact Thickness Metrology for Partially Transparent and Nontransparent Wafers for Backend Semiconductor Manufacturing B9.31
Wojciech J. Walecki, Vitali Souchkov, Kevin Lai, Phuc Van, Manuel Santos, Alexander Pravdivtsev, S. H. Lau, and Ann Koo
Dielectric Properties of Semiconductors by TDDFT in Real-Space and Real-Time Approach B9.33
Yasunari Zempo and Nobuhiko Akino
Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO B10.1
Kelly Ip, Brent Gila, Andrea Onstine, Eric Lambers, Young-Woo Heo, David Norton, Stephen Pearton, Jeffrey LaRoche, and Fan Ren
Preparation of SrS:Ce/ZnO Core-Shell Nanoparticles Using Reverse Micelle Method B10.2
Yusuke Kusakari, Shinji Ishizaki, and Masakazu Kobayashi
ZnO/GaN Heteroepitaxy B10.3
K.W. Jang, D.C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M.W. Cho, and T. Yao
Near Band-Edge and Excitonic Behavior of GaAsN Epilayers Grown by Chemical Beam Epitaxy B11.3
J.A.H Coaquira, L. Bhusal, W. Zhu, A. Fotkatzikis, M.-A. Pinault, A.P. Litvinchuk, and A. Freundlich
Charge Coupled Cyclotron Motion of Electrons and Holes in InGaAsN Epitaxial Layers B11.4
H.E. Porteanu, O. Loginenko, F. Koch, G. Dumitras, L. Geelhaar, and H. Riechert
Nitrogen Induced Optical Phonon Shift in GaNyAs1-y Studied by Raman Scattering B11.5
Li-Lin Tay, David J. Lockwood, and James A. Gupta
MBE-Grown GaNAsBi Matched to GaAs With 1.3-µm Emission Wavelength B11.6
Masahiro Yoshimoto, Wei Huang, and Kunishige Oe
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