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2003
FALL MEETING PROCEEDINGS
Symposium Z
Progress in Compound
Semiconductor Materials III--Electronic and Optoelectronic Applications
Editors: Daniel J. Friedman, Omar Manasreh,
Irina A. Buyanova, Anneli Munkholm, F. Danie Auret,
MRS Proceedings Volume 799
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The Effects of Atmosphere, Temperature, and Bandgap on the Annealing of GaInNAs for Solar Cell Applications Z1.3
A.J. Ptak, Sarah Kurtz, M. Young, and C. Kramer
Analysis of Emission Rate Measurements in a Material Showing a Meyer-Neldel- Rule Z1.6
Richard S. Crandall
MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells Z1.9
Liangjin Wu, Shanthi Iyer, Kalyan Nunna, Jia Li, Sudhakar Bharatan, Ward Collis, and Kevin Matney
Growth and Characterization of GaPNAs on Si Z1.10
John Geisz, J.M. Olson, W.E. McMahon, T. Hannappel, K. Jones, H. Moutinho, and M.M. Al-Jassim
HVPE-Based Orientation-Patterned GaAs : Added-Value for Non-Linear Applications Z2.2
D. Faye, E. Lallier, A. Grisard, B. Gérard, and E. Gil-Lafon
Submicrometer Scale Growth Morphology Control for the Making of Photonic Crystal Structures Z2.3
E. Gil-Lafon, A. Trassoudaine, D. Castelluci, A. Pimpinelli, R. Saoudi, O. Parriaux, A. Muravaud, C. Darraud
Beam Induced Lateral Epitaxy: A New Way to Lateral Growth in Molecular Beam Epitaxy Z2.4
Shigeya Naritsuka, Koji Saitoh, Takashi Suzuki , and Takahiro Maruyama
A Study of Anion Exchange Reactions at GaAs Surfaces for Heterojunction Interface Control Z2.5
Maria Losurdo, Danilo Giuva, Pio Capezzuto, Giovanni Bruno, Terence Brown, Greg Triplett, Gary May, and April S. Brown
Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AlGaAs Z2.6
P.N.K. Deenapanray, M. Krispin, W.E. Meyer, H.H. Tan, C. Jagadish, and F.D. Auret
Pulsed Laser Deposition of Bi- And Sb-Based Solid Solutions and Multilayer Structures Z2.9
Arik G. Alexanian, Hovsep N. Avetisyan, Karapet E. Avjyan, Nikolay S. Aramyan, Garegin A. Aleksanyan, Romen P. Grigoryan, Ashot M. Khachatryan, and Arsham S. Yeremyan
Growth of Rhombohedral B12P2 Thin Films on 6H-SiC(0001) by Chemical Vapor Deposition Z2.10
Peng Lu, J.H. Edgar, J.Pomeroy, M. Kuball, H.M. Meyer, and T. Aselage
Estimates of Impact Ionization Coefficients in Superlattice-Based Mid-Wavelength Infrared Avalanche Photodiodes Z3.1
C.H. Grein, K. Abu El-Rub , M.E. Flatté, and H. Ehrenreich
Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs) on Ge/SiGe/Si Substrates Z3.4
O. Kwon, J. Boeckl, M.L. Lee, A.J. Pitera, E.A. Fitzgerald, and S.A. Ringel
Non-Contact Determination of Free Carrier Concentration in n-GaInAsSb Z3.5
James E. Maslar, Wilbur S. Hurst, Christine A. Wang, and Daniel A. Shiau
A New Class of Solar Cells: Isomeric Boron Carbide Semiconductors With Fourth Quadrant Conductivity Z3.10
Ravi B. Billa, A.N. Caruso, and J.I. Brand
MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications Z4.3
Haruki Yokoyama, Hiroki Sugiyama, Yasuhiro Oda, Michio Sato, Noriyuki Watanabe, and Takashi Kobayashi
Evidence for Localization Effects in Gaassb/InP Heterostructures From Optical Spectroscopy Z4.4
Houssam Chouaib, Catherine Bru-Chevallier, Taha Benyattou, Hacene Lahreche, and Philippe Bove
Modeling of Recombination Lifetimes in Charge-Separation Device Structures Z4.5
Jamiyanaa Dashdorj, Richard Ahrenkiel, and Wyatt Metzger
Observation of Retarded Recombination in Charge-Separation Structures Z4.6
R.K. Ahrenkiel, D. Friedman, W. K. Metzger, M. Page, and J. Dashdorj
Pump Wavelength Tuning of Optical Pumping Injection Cavity Lasers for Enhancing Mid-Infrared Operation Z4.7
Todd C. McAlpine, Katherine R. Greene, Michael R. Santilli, Linda J. Olafsen, William W. Bewley, Christopher L. Felix, Igor Vurgaftman, Jerry R. Meyer, M.J. Yang, Hao Lee, and Ramon U. Martinelli
Feature Size and Density Effects in Wet Selective Etching of GaAs/AlAs p-HEMT Structures With Organic Acid-Peroxide Solutions Z4.10
Vinay S. Kulkarni, Kanti Prasad, William Quinn, Frank Spooner, and Changmo Sung
Electronic Structure of Native Point Defects in ZnGeP2 Z5.3
Xiaoshu Jiang, M.S. Miao, and Walter R.L. Lambrecht
Fabrication of Side-Illuminated p-i-n Photodiode With Waveguide Layers Z5.4
Byungok Jeon , Seungkee Yang, Hwayoung Kang, and Doyoung Rhee
3C-SiC Modulator for High-Speed Integrated Photonics Z5.12
Carlos Angulo Barrios, Christopher Ian Thomas, Michael Spencer, and Michal Lipson
Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy Z5.13
Zhang Rong, Yoon Soon Fatt, Tan Kianhua, Sun Zhongzhe, and Huang Qingfeng
Analysis of Photoluminescence Efficiency of Annealed GaInNAs Quantum Well Grown by Solid Source Molecular Beam Epitaxy Z5.14
Ng Tien Khee, Yoon Soon Fatt, and Fan Weijun
Laser Power and Temperature Dependent Photoluminescence Characteristics of Annealed GaInNAs/GaAs Quantum Well Z5.15
Ng Tien Khee, Yoon Soon Fatt, and Fan Weijun
Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy Z5.16
T. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura, and S. Yamaguchi
Electrical Properties of ß-FeSi2/Si Hetero-Diode Improved by Pulsed Laser Annealing Z5.20
Keiichi Tsuchiya, Noboru Miura, Hironaga Matsumoto, Ryotaro Nakano, and Shin-ichiro Uekusa Electrostatic Force Microscopy and Secondary Electron Imaging of Double Stacking Faults in Heavily n-Type 4H-SiC After Oxidation Z5.21
M.K. Mikhov, B.J. Skromme, R. Wang, C. Li, and I. Bhat
Infrared Dielectric Properties of In1-xG xAs Epilayers on InP (100) Z5.25
N.L. Rowell, G. Yu, D.J. Lockwood, and P.J. Poole
Defects and Surfactant Action of Antimony on GaAs and GaAs1-xNx on GaAs [100] by Molecular Beam Epitaxy Z5.26
W.K. Cheah, W.J. Fan, S.F. Yoon, S. Wicaksono, R. Liu, and A.T.S. Wee
Acceptors in Undoped Gallium Antimonide Z5.29
M.K. Lui, C.C. Ling, X.D. Chen, K.W. Cheah, and K.F. Li
Undoped Gallium Antimonide Studied by Positron Annihilation Spectroscopy Z5.30
S.K. Ma, C.C. Ling, H.M. Weng, and D.S. Hang
The Influence of GaSb Layer Thickness on the Band Gap of InAs/GaSb Type-II Superlattices for Mid-Infrared Detection Z5.31
Heather J. Haugan, Frank Szmulowicz, and Gail J. Brown
Deep Levels in Multilayer Structures of Si/Si0.8Ge0.2 Grown by Low-Pressure Chemical Vapor Deposition Z5.34
Yutaka Tokuda and Kenichi Shirai
Room-Temperature Defect Tolerance of Shape Engineered Quantum Dot Structures Z5.36
Matthew Lamberti, Alex Katsnelson, Michael Yakimov, Gabriel Agnello, Vadim Tokranov, and Serge Oktyabrsky Synthesis of Aligned ZnO Hexagonal Nanorods and Its Application to ZnS Based DC Electroluminescent Devices Z5.38
Takashi Hirate, Hironori Tanaka, Shinya Sasaki, Makoto Ozawa, Weichi Li, and Tomomasa Satoh
Characterization of Zinc Oxide Single Crystals for Epitaxial Wafer Applications Z5.40
Naoki Ohashi, Takeshi Ohgaki, Shigeaki Sugimura, Katsumi Maeda, Isao Sakaguchi, Haruki Ryoken, Ikuo Niikura, Mitsuru Sato, and Hajime Haneda
Determination of the Nitrogen Acceptor Ionization Energy in Zinc Oxide by Photoluminescence Spectroscopy Z5.43
Lijun Wang, N.Y. Garces, L.E. Halliburton, and N.C. Giles
Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots Z6.3/N8.3/T6.3
Morgan E. Ware, Allan Bracker, Daniel Gammon, and David Gershoni
Growth Structure, and Optical Properties of III-Nitride Quantum Dots Z6.5/N8.5/T6.5
Hadis Morkoç, Arup Neogi, and Martin Kuball
Diffuse X-ray Scattering From InGaAs/GaAs Quantum Dots Z6.6/N8.6/T6.6
Rolf Köhler, Daniil Grigoriev, Michael Hanke, Martin Schmidbauer, Peter Schäfer, Stanislav Besedin, Udo W. Pohl , Roman L. Sellin, Dieter Bimberg, Nikolai D. Zakharov, and Peter Werner
Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots Z6.8/N8.8/T6.8
A.M. Mintairov, A.S. Vlasov, and J.L.Merz
Quantum Dot Lasers and Amplifiers Z7.1/T7.1
Udo W. Pohl and Dieter Bimberg
1.5 Micron InAs quantum Dot Lasers Based on Metamorphic InGaAs/GaAs Heterostructures Z7.2/T7.2
V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.P. Vasil'ev, E.V. Nikitina, E.S. Semenova, N.V. Kryzhanovskaya, Yu.G. Musikhin, Yu.M. Shernyakov, M.V. Maximov, N.N. Ledentsov, D. Bimberg, and Zh.I. Alferov
Nanoengineered Quantum Dot Active Medium for Thermally-Stable Laser Diodes Z7.3/T7.3
V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, G. Agnello, and S. Oktyabrsky
First Electrically Injected QD-MCLED Emitting at 1.3 µm, Grown by Metal Organic Chemical Vapor Deposition Z7.4/T7.4
V. Tasco, M.T. Todaro, M. De Giorgi, M. De Vittorio, R. Cingolani, and A. Passaseo
Growth and Characterization of InAs Quantum Dots on GaAs (100) Emitting at 1.31µm Z7.8/T7.8
V. Celibert, B. Salem, G. Guillot , C. Bru-Chevallier, L. Grenouillet, P. Duvaut, P. Gilet, and A. Million
Characterization of Bulk Crystals Of Transition Metal Doped ZnO for Spintronic Applications Z8.6
M. H. Kane, R. Varatharajan, Z.C. Feng, S. Kandoor, J. Nause, C. Summers, I. T. Ferguson
Optical Properties of Bulk and Epitaxial ZnO for Waveguide Applications Z8.10
S. Ganesan, Z.C. Feng, D. Mehta, S. Kandoor, E.J. Wornyo, J. Nause, and I. Ferguson
Spin-Dependent Optical Processes in II-VI Diluted Magnetic Semiconductor Nanostructures Z9.1
Yasuo Oka, Kentaro Kayanuma, Mio Sakuma, Ayahito Uetake, Izuru Souma, Zhanghai Chen, and Akihiro Murayama
Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and MnGaN Z9.5
Costel Constantin, Hamad Al-Brithen, Muhammad B. Haider, David Ingram, and Arthur R. Smith
Wide Bandgap Materials for Semiconductor Spintronics Z9.6
S.J. Pearton,C.R. Abernathy,G.T. Thaler, R. Frazier, D.P. Norton,J. Kelly, R. Rairigh, A.F. Hebard, Y.D. Park, and J.M. Zavada
CdZnSe/Zn(Be)Se Quantum Dot Structures: Size, Chemical Composition and Phonons Z9.7
Y. Gu, Igor L. Kuskovsky, J. Fung, R. Robinson, I.P. Herman, G.F. Neumark, X. Zhou, S.P. Guo, and M.C. Tamargo
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