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High Current Injection to a UV-LED Grown on a Bulk AlN Substrate Y1.3
Toshio Nishida, Tomoyuki Ban, Hisao Saito, and Toshiki Makimoto
GaN Quantum Dot UV Light Emitting Diode Y1.4
Jeong-Sik Lee, Satoru Tanaka, Peter Ramvall, and Hiroaki Okagawa
High Power 330 nm AlInGaN UV LEDs in the High Injection Regime Y1.8
M. Gherasimova, J. Su, G. Cui, J. Han, H. Peng, E. Makarona, Y. He, Y.-K.Song, A.V. Nurmikko
Optical Properties of AlN/AlGa(In)N Short Period Superlattices--Deep UV Light Emitting Diodes Y1.9
M. Holtz, I. Ahmad, V.V. Kuryatkov, B.A. Borisov, G.D. Kipshidze, A. Chandolu, S.A. Nikishin, and H. Temkin
High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD Y1.10
Jean-Yves Duboz, Jean-Luc Reverchon, Mauro Mosca, Nicolas Grandjean, and Franck Omnes
Growth and Fabrication of 2 Inch Free-Standing GaN Substrates via the Boule Growth Method Y2.1
Drew Hanser, Lianghong Liu, Edward A. Preble, Darin Thomas, and Mark Williams
Growth and Characterization of Bulk GaN Crystals at High Pressure and High Temperature Y2.3
M.P. D'Evelyn, K.J. Narang, D.-S. Park, H.C. Hong, M. Barber, S.A. Tysoe, J. Leman, J. Balch, V.L. Lou, S.F. LeBoeuf, Y. Gao, J.A. Teetsov, P.J. Codella, P.R. Tavernier, D.R. Clarke, and R.J. Molnar
Vapor Phase Transport of AlN in an RF Heated Reactor: Low and High Temperature Studies Y2.8
V. Noveski, R. Schlesser, J. Freitas Jr, S. Mahajan, S. Beaudoin, and Z. Sitar
Crucible Selection in AlN Bulk Crystal Growth Y2.9
Rafael Dalmau, Balaji Raghothamachar, Michael Dudley, Raoul Schlesser, and Zlatko Sitar
Growth of GaN Crystals Under Ammonothermal Conditions Y2.10
Michael J. Callahan, Buguo Wang, Lionel O. Bouthillette, Sheng-Qi Wang, Joseph W. Kolis, and David F. Bliss
Curvature and Strain inThick HVPE-GaN for Quasi-Substrate Applications Y2.11
Claudia Roder, Tim Böttcher, Tanya Paskova, Bo Monemar, and Detlef Hommel
HNO3 Treatment of Sapphire for Management of GaN Polarity in MOCVD Method: Comparison of the Properties of +c and –c GaN Region Y3.3
Motoki Takabe, Masatomo Sumiya, and Shunro Fuke
Either Step-Flow or Layer-by-Layer Growth for AlN on SiC (0001) Substrates Y3.4
Jun Suda, Norio Onojima, Tsunenobu Kimoto, and Hiroyuki Matsunami
Growth and Surface Reconstructions of AlN(0001) Films Y3.5
C.D. Lee, Y. Dong, R.M. Feenstra, J.E. Northrup, and J. Neugebauer
Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces Y3.7
Charles R. Eddy Jr., James C. Culbertson, Nabil D. Bassim, Mark E. Twigg, Ronald T. Holm, Robert E. Stahlbush, Richard L. Henry, Philip G. Neudeck, Andrew J. Trunek, and J.Anthony Powell
ZnO/AlGaN Ultraviolet Light Emitting Diodes Y3.9
D.M. Bagnall, Ya.I. Alivov, E.V. Kalinina, D.C. Look, B.M. Ataev, M.V. Chukichev, A.E. Cherenkov, and A.K. Omaev
Electrical and Optical Characteristics of Delta Doped AlGaN Cladding Layer Materials for Highly Efficient 340nm Ultra Violet LEDs Y3.10
H.P. Xin, J.S. Flynn, J.A. Dion, E.L. Hutchins, H. Antunes, L. Fieschi-Corso, R.Van Egas, and G.R. Brandes
Effects of Growth Interruption on the Structural and Optical Properties of GaN Self-Assembled Quantum Dots Y4.1
K. Hoshino, S. Kako, and Y. Arakawa
Electron Field Emission from GaN Nanotip Pyramids Y4.2
Hock M. Ng, Jonathan Shaw, Aref Chowdhury, and Nils G. Weimann
Influence of AlN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy Y4.4
N. Gogneau, E. Monroy, D. Jalabert, E. Sarigiannidou, J. L. Rouvière, and B. Daudin
Intersubband Absorptions in Doped and Undoped GaN/AlN Quantum Wells at Telecommunication Wavelengths Grown on Sapphire and 6H-SiC Substrates Y4.5
A. Helman, M. Tchernycheva, A. Lusson, E. Warde, F.H. Julien, E. Monroy, F. Fossard, Le Si Dang, and B. Daudin
III-Nitride Photonic Crystals for Blue and UV Emitters Y4.6
J. Shakya, K.H. Kim, J. Li, J. Y. Lin, H. X. Jiang, and T.N. Oder
Structural and Optical Properties of GaN Quantum Dots Y4.7
B. Daudin, N. Gogneau, C. Adelmann, , E. Sarigiannidou, T. Andreev, F. Enjalbert, E. Monroy, F. Fossard, J.L. Rouvière, Y. Hori, X. Biquard, D. Jalabert,Le Si Dang, M. Tanaka, and O. Oda
Optimization of GaN/AlGaN Quantum Wells for Ultraviolet Emitters Y4.8
A. Hangleiter, D. Fuhrmann, M. Greve, and U. Rossow
InN Nanostructures: Strain and Morphology Y4.9
Francois Demangeot, Jean Frandon, Claire Pinquier, Michel Caumont, Olivier Briot, Benedicte Maleyre, Sandra Clur-Ruffenach, and Bernard Gil
Electron Micro-Probe Analysis and Cathodoluminescence Spectroscopy of Rare Earth - Implanted GaN Y5.2
S. Dalmasso , R.W. Martin , P.R. Edwards, V. Katchkanov, K.P. O'Donnell, K. Lorenz , E. Alves , U. Wahl, B. Pipeleers, V. Matias , A. Vantomme,, Y. Nakanishi , A. Wakahara, and A. Yoshida
Structure and Electrical Activity of Rare-Earth Dopants in Selected III-Vs Y5.3
J.-S. Filhol, S. Petit, R. Jones, B. Hourahine, Th. Frauenheim, H. Overhof, J. Coutinho, M.J. Shaw, P.R. Briddon, and S. Öberg
High Temperature Implantation of Tm in GaN Y5.4
K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R.W. Martin, and K.P. O`Donnell
Processing of Rare Earth Doped GaN With Ion Beams Y5.5
K. Lorenz, U. Wahl, E. Alves, T. Wojtowicz, P. Ruterana, S. Dalmasso, R.W. Martin, K.P. O`Donnell, S. Ruffenach, O. Briot, and A. Vantomme
Structure and Photoluminescence Investigations of Er Doped GaN Layers Grown by MBE Y5.6
T. Wojtowicz, H.M. Ng, and P. Ruterana
Luminescence Properties of Eu Ion-Implanted GaN Y5.7
Shin-ichiro Uekusa and Isao Tanaka
Luminescent Holmium Doped Amorphous AlN Thin Films for Use as Waveguides and Laser Cavities Y5.8
Muhammad Maqbool, H.H. Richardson, P.G. Van Patten, and M.E. Kordesch
Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped In Situ With Er and Eu During Molecular Beam Epitaxy Y5.10
V. Katchkanov, J.F.W. Mosselmans, S. Dalmasso , K. P. O'Donnell, R.W. Martin, O. Briot, N. Rousseau, and G. Halambalakis
Hydrogen-Related Local Vibrational Modes in GaN:Mg Grown by Molecular Beam Epitaxy Y5.15
D. Pastor, R. Cuscó, L. Artús, F. Naranjo, and E. Calleja
Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition Y5.16
Y. Gong, Y. Gu, Igor L. Kuskovsky, G.F. Neumark, J. Li, J.Y. Lin, H.X. Jiang, and I. Ferguson
Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals Y5.17
A. Sarua 1 , S. Rajasingam, M. Kuball, N. Garro, O. Sancho, A. Cros, A. Cantarero, D. Olguin, B. Liu, D. Zhuang, and J.H. Edgar
Surface Potential Measurements of Doping and Defects in p-GaN Y5.18
M. Losurdo, M.M. Giangregorio, G. Bruno, A.S. Brown, W.A. Doolittle, Gon Namkoong, A.J. Ptak, and T.H. Myers
Formation and Dissociation of Hydrogen-Related Defect Centers in Mg-Doped GaN Y5.20
O. Gelhausen, M.R. Phillips,E.M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. Hoffmann
Platelet Inversion Domains Induced by Mg-Doping in ELOG AlGaN Films Y5.21
R. Liu, F.A. Ponce, D. Cherns, H. Amano, and I. Akasaki
TEM Investigation of Defect Reduction and Etch Pit Formation in GaN Y5.22
Angelika Vennemann, Jens Dennemarck, Roland Kroger, Tim Bottcher, Detlef Hommel and Peter Ryder
Thermally Stimulated Current Spectroscopy of Carbon-Doped GaN Grown by Molecular
Beam Epitaxy Y5.27
Z-Q. Fang, D.C. Look, R. Armitage, Q. Yang, and E.R. Weber
Microstructure of Nonpolar a-Plane GaN Grown on (1120) 4H-SiC Investigated by TEM Y5.28
D.N. Zakharov, Z. Liliental-Weber, B. Wagner, Z.J. Reitmeier, E.A. Preble, and R.F. Davis
Structural Study of V-like Columnar Inversion Domains in AlN Grown on Sapphire Y5.29
J. Jasinski, T. Tomaszewicz, Z. Liliental-Weber, Q. S. Paduano, D. W. Weyburne
The Microstructure of GaN Nucleation Layers Grown by MOCVD on (11 2 0) Sapphire Versus Pressure and Temperature Y5.32
T. Wojtowicz, P. Ruterana, M.E. Twigg, R.L. Henry, D.D. Koleske, A.E. Wickenden
Effects of Si-Doping on the Microstructure of AlGaN/GaN Multiple-Quantum-Well Y5.33
R. Liu, F.A. Ponce, S-L. Sahonta, D. Cherns, H. Amano, and I. Akasaki
Structural Units and Energy of Grain Boundaries in GaN Y5.34
Jun Chen, Pierre Ruterana, and Gerard Nouet
Analysis of InGaN-GaN Quantum Well Chemistry and Interfaces by Transmission Electron Microscopy and X-ray Scattering Y5.36
T.M. Smeeton, M.J. Kappers, J.S. Barnard, and C.J. Humphreys
Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods Y5.37
H. Witte, K. Fluegge, A. Dadgar, A. Krtschil, A. Krost, and J. Christen
Identification of Carbon-related Bandgap States in GaN Grown by MOCVD Y5.38
A. Armstrong, A.R. Arehart, S.A. Ringel, B. Moran, S.P. DenBaars, U.K. Mishra, and J.S. Speck
Band Bending Near the Surface in GaN as Detected by a Charge Sensitive Probe Y5.39
S. Sabuktagin, M.A. Reshchikov, D.K. Johnstone, and H. Morkoç
Reciprocal Space Mapping of X-ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates Y5.40
K. Tachibana, Y. Harada, S. Saito, S. Nunoue, H. Katsuno, C. Hongo, G. Hatakoshi, and M. Onomura
Time Resolved Photoluminescence of Si-Doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy Y5.45
Madalina Furis, Alexander N. Cartwright, Jeonghyun Hwang, and William J. Schaff
Anomalous Composition Dependence of Optical Energies of MBE-Grown InGaN Y5.47
I. Fernandez-Torrente, D. Amabile, R.W. Martin, K.P. O'Donnell, J.F.W. Mosselmans, E. Calleja, and F.B. Naranjo
Anisotropic Dielectric Properties of GaN Epilayers on Sapphire Y5.48
N.L. Rowell, G. Yu, and D.J. Lockwood
Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots Y5.51
Ana Helman, Khalid Moumanis, Maria Tchernycheva, Alain Lusson, Francois Julien, Benjamin Damilano, Nicolas Grandjean, Jean Massies, Christophe Adelmann, Frederic Fossard, Daniel Le Si Dang, and Bruno Daudin
Optical and Microstructural Properties of N- and Ga-Polarity GaN Y5.52
A. Bell, J.L. Smit, R. Liu, J. Mei, F.A. Ponce, H.M. Ng, A. Chowdhury, and N.G. Weimann
Photoluminescence From Freestanding GaN With ( 0 1 10 ) Orientation Y5.53
M.A. Reshchikov, A. Teke, H.P. Maruska, D.W. Hill, and H. Morkoç
Structural Defect-Related Photoluminescence in GaN Y5.55
L. Chen, B.J. Skromme, M.K. Mikhov, H. Yamane, M. Aoki, F.J. DiSalvo, B. Wagner, R.F. Davis, P.A. Grudowski, and R.D. Dupuis
Optical Evaluation of Pretreated InGaN Quantum Well Structures Y5.59
T. Böttcher, F. Bertram, P. Bergman, A. Ueta, J. Christen, and D. Hommel
Strain Evolution and Phonons in AlN/GaN Superlattices Y5.60
V. Darakchieva, P. P. Paskov, M. Schuber, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano , and I. Akasaki
Confocal Photoluminescence and Cathodoluminescence Studies of AlGaN Y5.64
V. Dierolf, O. Svitelskiy, G.S. Cargill III, A. Yu. Nikiforov, J. Redwing, and J. Acord
Manifestation of Structural Defects in Photoluminescence From GaN Y5.66
M.A. Reshchikov, J. Jasinski, F. Yun, L. He, Z. Liliental-Weber, and H. Morkoç
Raman Characterization of Strained GaNyAs1-y and InxGa1-xNyAs1-y Epilayers Y5.67
Li-Lin Tay, David J. Lockwood, James A. Gupta, and Zbig R. Wasilewski
Optical Study of Localized and Delocalized States in GaAsN/GaAs Y5.68
Z.Y. Xu, X.D. Luo, X.D. Yang, P.H. Tan, C. L. Yang, W.K. Ge, Y. Zhang, A. Mascarenhas, H.P. Xin, and C.W. Tu
Strong Dependence of the Fundamental Band Gap on the Alloy Composition in Cubic InxGa1-xN and InxAl1-xN Alloys Y5.69
Z. Dridi, B. Bouhafs, and P. Ruterana
Reduction of Threading Dislocation Density in AlGaN by Indium Incorporation Y5.71
H. Kang, Z.C. Feng, I. Ferguson , S.P. Guo, and M. Pophristic
Origins of Light Emission and Efficiency Saturation of the Photoluminescence of GaN Nanocrystallites Y5.73
Xiang-Bai Chen, John L. Morrison, Margaret K. Penner, Jennifer Elle, and Leah Bergman
Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN Y6.1
P.P. Paskov, T. Paskova, P.O. Holtz, and B. Monemar
Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature Y6.5
F. Semond, D. Byrne, F. Natali. M. Leroux, J. Massies, N. Antoine-Vincent, A. Vasson, P. Disseix, and J. Leymarie
Characterization of III-Nitride Based Schottky UV Detectors With Wide Detectable Wavelength Range (360-10 nm) Using Synchrotron Radiation Y6.6
Atsushi Motogaito, Kazumasa Hiramatsu, Yasuhiro Shibata, Hironobu Watanabe, Hideto Miyake, Kazutoshi Fukui, Youichiro Ohuchi, Kazuyuki Tadatomo, and Yutaka Hamamura
Time-Resolved Reflectivity Studies of Electric Field Effects in III-Nitride Semiconductors Y6.10
M. Wraback, H. Shen, A.V. Sampath, C.J. Collins, G.A. Garrett, W.L. Sarney, Y. Fedyunin, J. Cabalu, and T.D. Moustakas
MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues Y7.2
Pradeep Rajagopal, John C. Roberts, J.W. Cook Jr., J.D. Brown, Edwin L. Piner, and Kevin J. Linthicum
High Temperature Operation of A New Normally-Off AlGaN/GaN HFET on Si Substrate Y7.3
Seikoh Yoshida, Jiang Li, Takahiro Wada, and Hironari Takehara
High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors With a Regrown p-InGaN Base Layer Y7.4
Toshiki Makimoto, Yoshiharu Yamauchi, and Kazuhide Kumakura
Design of Composite Channels for Optimized Transport in Nitride Devices Y7.9
Madhusudan Singh, Jasprit Singh, and Umesh K. Mishra
Experimental Analysis and a New Theoretical Model for Anomalously High Ideality Factors (n >> 2.0) in GaN-Based p-n Junction Diodes Y7.11
Jay M. Shah, Yunli Li, Thomas Gessmann, and E. Fred Schubert
Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess Y8.2
D.J. As, D.G. Pacheco-Salazar, S. Potthast, and K. Lischka
Above and Below Bandgap Excitation of Er-Defect Complexes and Isolated Er in Er-Implanted GaN Y8.3
A. Braud, M. Abouzaid, M. Wojdak, J.L. Doualan, R. Moncorge, B. Pipeleers, and A. Vantomme
Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy Y8.4
S.V. Novikov, L.X. Zhao, C.T. Foxon, B.Ja. Ber, A.P. Kovarsky, I. Harrison, M.W. Fay, and P.D. Brown
Optical Properties of Mn-Doped GaN Y8.5
O. Gelhausen, E. Malguth, M.R. Phillips, E.M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, and M. Stutzmann
Magnetic Properties of Mn-Doped GaN, InGaN, and AlGaN Y8.6
M.L. Reed, E.A. Berkman, M.J. Reed, F.E. Arkun, T. Chikyow, S.M. Bedair, J.M. Zavada, and N.A. El-Masry
Mg Doped GaN Using a Valved, Thermally Energetic Source: Enhanced Incorporation, Control and Quantitative Optimization Y8.11
Shawn D. Burnham, W. Alan Doolittle, Gon Namkoong, and Walter Henderson
Epitaxy of Highly Optical Efficient GaN on O and Zn Face ZnO Y9.1
Xing Gu, Michael A. Reshchikov, Lei He, Ali Teke, Feng Yun, Daniel K. Johnstone, Bill Nemeth, Jeff Nause, and Hadis Morkoç
Structural and Optical Characterization of InGaN Layers Grown by MOMBE Y9.2
P. Singh, J. Aderhold, J. Graul, V.Yu. Davydov, F. Gourbilleau, and P. Ruterana
The Structure of Dislocations in GaN Grown by MBE as a Function of the Gallium to Nitrogen Ratio Y9.3
Marcus Q. Baines, David Cherns, Sergei V. Novikov, Michael J. Manfra, and C. Thomas Foxon
Combined MOCVD and MBE Growth of GaN on Porous SiC Y9.6
Ashutosh Sagar, R.M. Feenstra, C.K. Inoki, T.S. Kuan, and D.D. Koleske
Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity Y9.7
Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov, J. Jasinski, M.A. O'Keefe, S. Hautakangasa, A. Laaksoa, and K. Saarinena
Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN Y9.8
A.R. Arehart, C. Poblenz, B. Heying, J.S. Speck, U.K. Mishra, S.P. DenBaars, and S.A. Ringel
Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures Y10.5
Madalina Furis, Alexander N. Cartwright, Hong Wu, and William J. Schaff
Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer Y10.11
G.C. Chi, J.K. Sheu, M. L. Lee, C.J. Kao, Y.K. Su, S.J. Chang,and W.C. Lai
Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells Y10.12
Mitsuru Funato, Yoshinobu Kawaguchi, and Shigeo Fujita
Wafer-Fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor With uid-GaAs Base-Collector Setback Y10.20
Sarah Estradai, James Champlain, Chad Wang, Andreas Stonas, Larry Coldren, Steven DenBaars, Umesh Mishra, and Evelyn Hu
Design and Fabrication of GaN-Based Permeable-Base Transistors Y10.21
Jasper S. Cabalu, Liberty L. Gunter, Ian Friel, Anirban Bhattacharyya, Yuri Fedyunin, Kanin Chu, Enrico Bellotti, Charles Eddy, and Theodore D. Moustakas
High Electron Mobility in AlGaN/GaN HEMT Grown On Sapphire: Strain Modification By Means of AlN Interlayers Y10.22
Marianne Germain, Maarten Leys, Steven Boeykens, Stefan Degroote, Wenfei Wang, Dominique Schreurs, Wouter Ruythooren, Kang-Hoon Choi, Benny Van Daele, Gustaaf Van Tendeloo, and Gustaaf Borghs
Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AlN Epilayers Y10.23
Z.Y. Fan, M.L. Nakarmi, J.Y. Lin, and H.X. Jiang
LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices Y10.26
M-A. di Forte Poisson, M. Magis, M. Tordjman, R. Aubry, M. Peschang, S.L. Delage, J. di Persio, B. Grimbert, V. Hoel, E. Delos, D. Ducatteau, and C. Gaquiere
Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates Y10.34
Brian P. Wagner, E.A. Preble, Z.J. Reitmeier, R.F. Davis, D.N. Zakharov, and Z. Liliental-Weber Thermal Conductivity of GaN Grown on Silicon Substrates Y10.35
C. Mion, Y.C. Chang, J.F. Muth, P. Rajagopal, and J.D. Brown
Growth of Crack-Free GaN on AlN Quantum Dots on Si(111) Substrates by MOCVD Y10.36
W.H. Sun, J.L. Chen, L.S. Wang, and S.J. Chua
MOCVD AlGaN/GaN HFET's Material Optimization and Devices Characterization Y10.39
Alexander Demchuk, Don Olson, Dan Olson, Minseub Shin, and Gordon Munns
Arsenic Incorporation Behavior in Nitrogen-rich GaNAs Alloys Synthesized by Metalorganic Chemical Vapor Deposition (MOCVD) Y10.41
M. Gherasimova, R.G. Wheeler, L.J. Guido, K.L. Chang, and K.C. Hsieh
A Study of Elemental Interdiffusion in GaN/Si Wafer Grown by Metalorganic Vapor Phase Epitaxy Y10.42
X. Chen, M. Ishiko, Y. Kuroiwa, and N. Sawaki
Growth and Characterization of AlN and GaN Thin Films Deposited on Si(111) Substrates Containing a Very Thin Al Layer Y10.43
Zachary J. Reitmeier and Robert F. Davis
Investigation of Molecular Co-Doping for Low Ionization Energy P-Type Centers in (Ga,Al)N Y10.44
Zhe Chuan Feng, Adam M. Payne, David Nicol, Paul D. Helm, and Ian Ferguson
Real-Time Optical Monitoring of Gas Phase Dynamics for the Growth of InN at Elevated Pressures Y10.45
N. Dietz, H. Born, M. Strassburg, and V. Woods
Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied With Picosecond Time-Resolved Photoluminescence Y10.47
Qing Yang, Rob Armitage, Eicke R. Weber, Ronald Birkhahn, David Gotthold, Shiping Guo, and Brian Albert
Novel Method for the Activation of Acceptor Dopant in AlN Introducing Localized Band by Isoelectronic Dopant Y10.49
Toshiyuki Takizawa
Evidence of Strong Indium Segregation in MOCVD In x Ga 1-x N/GaN Quantum Layers Y10.55
Grzegorz Maciejewski, Grzegorz Jurczak, Slawomir Kret, Pawel Dlu z ewski , and Pierre Ruterana
Fabrication of Thermoelectric Devices Using AlInN and InON Films Prepared by Reactive Radio-Frequency Sputtering Y10.56
S. Yamaguchi, R. Izaki, N. Kaiwa, S. Sugimura, and A. Yamamoto
Synthesis and Characterization of High Quality Ferromagnetic Cr-Doped GaN and AlN Thin Films With Curie Temperatures Above 900K Y10.57
Stephen Y. Wu, H.X. Liu, Lin Gu, R.K. Singh, M. van Schilfgaarde, David J. Smith, N.R. Dilley, L. Montes, M.B. Simmonds, and N. Newman
Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy Y10.59
B.L. VanMil, Kyoungnae Lee, Lijun Wang, N.C. Giles, and T.H. Myers
MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors Y10.61
Dharanipal Doppalapudi, Richard Mlcak, Jeffrey Chan, Harry Tuller, Anirban Bhattacharya, and Theodore Moustakas
Effect of Buffer Design on AlGaN/AlN/GaN Heterostrucutres by MBE Y10.62
Gon Namkoong, W. Alan Doolittle, A.S. Brown, M. Losurdo, M.M. Giangregorio, and G. Bruno
GaN Layers Re-Grown on Etched GaN Templates by Plasma Assisted Molecular Beam Epitaxy Y10.64
L. He, X. Gu, J. Xie, F. Yun, A.A. Baski, and H. Morkoç
Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN Y10.65
Jun Suda, Hiroyasu Yamashita, Robert Armitage, Tsunenobu Kimoto, and Hiroyuki Matsunami
The Influence of Substrate Polarity on the Blue Emission From As-Doped GaN Layers Grown by Molecular Beam Epitaxy Y10.66
S.V. Novikov, L.X. Zhao, C.T. Foxon, I. Harrison, R.P. Campion, C.R. Staddon, S.W. Kang, O. Kryliouk, and T. Anderson
GaN Epitaxial Growth Process at High Growth Temperature by NH3 Source Molecular Beam Epitaxy Y10.67
Naoki Ohshima, Akihiro Sugihara, Naoya Yoshida, and Naohiko Okabe
Structural Characterization of Low-Temperature InN Buffer Layer Grown by RF-MBE Y10.68
T. Araki and Y. Nanishi
Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE Y10.71
Chiharu Morioka, Tomohiro Yamaguchi, Hiroyuki Naoi, Tsutomu Araki, Akira Suzuki, and Yasushi Nanishi
Properties of Crucible Materials for Bulk Growth of AlN Y10.74
Glen A. Slack, Jon Whitlock, Ken Morgan, and Leo J. Schowalter
Synthesis, Structure and Luminescence of High Brightness Gallium Nitride Powder Y10.75
R. Garcia, A. Thomas, A. Bell, M. Stevens, and F.A. Ponce
Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures Y11.1
Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh
Influence of Metal Thickness to Sensitivity of Pt/GaN Schottky Diodes for Gas Sensing Applications Y11.5
V. Tilak, M. Ali, V. Cimalla, V. Manivannan, P. Sandvik, J. Fedison, O. Ambacher, D. Merfeld
Laser Diode Facet Degradation Study Y11.10
Ulrich T. Schwarz, Thomas Schoedl, V. Kümmler, A. Lell, and V. Härle
Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy Y12.1
Yasushi Nanishi, Yoshiki Saito, Tomohiro Yamaguchi, Fumie Matsuda, Tsutomu Araki, Hiroyuki Naoi, Akira Suzuki, Hiroshi Harima, and Takao Miyajima
Optical and Microstructural Characterisation of InN Grown by PAMBE on (0001) Sapphire and (001) YSZ Y12.3
P.A. Anderson, C.E. Kendrick, T.E. Lee, W. Diehl, R.J. Reeves, V.J. Kennedy, A. Markwitz, R.J. Kinsey , and S.M. Durbin
Temperature Dependence of the Optical Properties for InN Films Grown by RF-MBE Y12.5
Y. Ishitani, K. Xu, W. Terashima, H. Masuyama, M. Yoshitani, N. Hashimoto, S.B. Che, and A. Yoshikawa
Growth of Non-Polar a-Plane and Cubic InN on r-Plane Sapphire by Molecular Beam Epitaxy Y12.6
Hai Lu, William J. Schaff, Lester F. Eastman, Volker Cimalla, Joerg Pezoldt, Oliver Ambacher, J. Wu, and Wladek Walukiewicz
Optical and Electrical Properties of Low to Highly-Degenerate InN Films Y12.7
D.B. Haddad, H. Dai, R. Naik, C. Morgan, V.M. Naik, J.S. Thakur, G.W. Auner, L.E. Wenger, H. Lu, and W.J. Schaff
Study of the Growth Mechanism and Properties of InN Films Grown by MOCVD Y12.8
Abhishek Jain and Joan M. Redwing
Pressure Dependence of Optical Transitions in In-Rich Group III-Nitride Alloys Y12.9
S.X. Li, J. Wu, W. Walukiewicz, W. Shan, E.E. Haller, Hai Lu, and William J. Schaff
N-Rich GaNAs With High As Content Grown by Metalorganic Vapor Phase Epitaxy Y12.10
Akitaka Kimura, H.F. Tang, C.A. Paulson, and T.F. Kuech
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