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Germanium Island Size Distribution by Atomistic Simulation T1.6
Richard J. Wagner and Erdogan Gulari
Fabrication of Two-Dimensional Si/Ge Nanowires and Nanorings T1.7
Midori Kawamura, Bert Voigtländer, Neelima Paul, and Vasily Cherepanov
Epitaxial Metallic Islands: Charge Confinement and Templates for Atomic Wires T3.5
A.M. Mazzone and G.L. Savini
Facile Fabrication of Nanoparticles in the Nanospace of Ultrathin TiO2-Gel Films: Composition, Morphology and Catalytic Activity T3.6
Junhui He and Toyoki Kunitake
Synthesis and Characterization of WOx Nanowires and their Conversion to WS2 Nanotubes T3.11
Lifeng Dong, Aitor Maiz, and Jun Jiao
TEM Analysis of Stress in GaInAs/(001)InP Epitaxial Systems T3.19
André Rocher, Martiane Cabié, Anne Ponchet, and Nicolas Bertru
Pit Nucleation in Compound Semiconductor Thin Films T3.24
Mathieu Bouville, Michael L. Falk, and Joanna Mirecki Millunchick
Optical Properties of Quantum-Wires Grown Using Lateral Composition Modulation Induced by (InP)1/(GaP)1 Short-Period Superlattices T3.25
J.D. Song, J.M. Kim, and Y.T. Lee
Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy T3.26
J.D. Song, Y.M. Park, J.C. Shin, J.G. Lim, Y.J. Park, W.J. Choi, I.K. Han, W.J. Cho, J.I. Lee, H.S. Kim, and C.G. Park
Site-Control Technology for InAs Quantum Dot Formation by Direct Deposition of Indium Nano-Dots With a Nano-Jet Probe T3.29
Shunsuke Ohkouchi, Yusui Nakamura, Hitoshi Nakamura, and Kiyoshi Asakawa
InNAs and GaInNAs Self-Assembled Quantum Dots and Lasers Grown by Solid Source Molecular Beam Epitaxy T3.31
Z.Z. Sun, S.F.Yoon, K.C. Yew, and B.X. Bo
Preparation of Ge (100) Substrates for High-Quality Epitaxial Growth of Group IV Materials T3.34
Mark Nowakowski, Jordana Bandaru, L.D. Bell, and Shouleh Nikzad
Controlled Fabrication by LPCVD of Luminescent SiGe/SiO2 (LTO) Very Thin Multilayers T3.35
A. Rodríguez, J. Sangrador, T. Rodríguez, M. Avella, A.C. Prieto, J. Jiménez , M.I. Ortiz, and C. Ballesteros
Self Organized Compound Semiconductor Nanocrystallite Distributions in SiO2 on Silicon Synthesized by Ion Implantation T3.36
H. Karl, I. Großhans, and B. Stritzker
Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2 Barriers T3.42
L.C. Wu, K.J. Chen, M. Dai, W. Li, L.W. Yu, and X.F. Huang
Charging Effects in Si Quantum Dots for Non Volatile Memories Applications Monitored by Electrostatic Force Microscopy T3.43
R.A. Puglisi, G. Nicotra, S. Lombardo, C. Spinella, G. Ammendola, and C. Gerardi
(In,Ga)As Quantum Dot Array Formation by Self-Organized Anisotropic Strain Engineering of an (In,Ga)As/GaAs Quantum Wire Template: Shallow-Pattern Effects T4.5
T. Mano, R. Nötzel, G. J. Hamhuis, T. J. Eijkemans, E. Smalbrugge, and J. H. Wolter
Systematic Studies of SiGe/Si Islands Nucleated via Separate In Situ, or Ex Situ, Ga+ Focused Ion Beam-Guided Growth Techniques T4.7
T.E. Vandervelde, S. Atha, T.L. Pernell, R. Hull, and J.C. Bean
Size and Critical Thickness Evolution During Growth of Stacked Layers of InAs/InP(001) Quantum Wires Studied by In Situ Stress Measurements T5.3
David Fuster, María Ujué González, Luisa González, Yolanda González, Teresa Ben, Arturo Ponce, and Sergio I. Molina
Microanalysis of Self-assembled InAs Quantum Dot Structures Grown for Infrared Detector Applications T5.5
W.L. Sarney, J.W. Little, and S. Svensson
Optical Properties of InGaAs QDs Grown in a GaAs Matrix by MOCVD, Emitting at 1300 nm at Room Temperature T5.8
M.T. Todaro, M. De Giorgi, V. Tasco, M. DeVittorio, A. Passaseo, and R. Cingolani
Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots T6.3/N8.3/Z6.3
Morgan E. Ware, Allan Bracker, Daniel Gammon, and David Gershoni
Growth Structure, and Optical Properties of III-Nitride Quantum Dots T6.5/N8.5/Z6.5
Hadis Morkoç, Arup Neogi, and Martin Kuball
Diffuse X-ray Scattering From InGaAs/GaAs Quantum Dots T6.6/N8.6/Z6.6
Rolf Köhler, Daniil Grigoriev, Michael Hanke, Martin Schmidbauer, Peter Schäfer, Stanislav Besedin, Udo W. Pohl, Roman L. Sellin, Dieter Bimberg, Nikolai D. Zakharov, and Peter Werner
Near-Field Magneto-Photoluminescence of Single Self-Organized Quantum Dots T6.8/N8.8/Z6.8
A.M. Mintairov, A.S. Vlasov, and J.L. Merz
Quantum Dot Lasers and Amplifiers T7.1/Z7.1
Udo W. Pohl and Dieter Bimberg
1.5 micron InAs Quantum Dot Lasers Based on Metamorphic InGaAs/GaAs Heterostructures T7.2/Z7.2
V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.P. Vasil'ev, E.V. Nikitina, E.S. Semenova, N.V. Kryzhanovskaya, Yu.G. Musikhin, Yu.M. Shernyakov, M.V. Maximov, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov
Nanoengineered Quantum Dot Active Medium for Thermally-Stable Laser Diodes T7.3/Z7.3
V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, G. Agnello, and S. Oktyabrsky
First Electrically Injected QD-MCLED Emitting at 1.3 µm, Grown by Metal Organic Chemical Vapor Deposition T7.4/Z7.4
V. Tasco, M.T. Todaro, M. De Giorgi, M. De Vittorio, R. Cingolani, and A. Passaseo
Growth and Characterization of InAs Quantum Dots on GaAs (100) Emitting at 1.31 µm T7.8/Z7.8
V. Celibert, B. Salem, G. Guillot, C. Bru-Chevallier. L. Grenouillet, P. Duvaut, P. Gilet, and A. Million
Application of Diluted Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources T8.1
Pallab Bhattacharya, Sasan Fathpour, Subhananda Chakrabarti, Michael Holub, and Siddhartha Ghosh
Effects of Clustering and Dimensionality on the Magnetic Properties of Diluted Magnetic Semiconductors T8.8
R.N. Bhatt, Malcolm P. Kennett, Mona Berciu, and Adel Kassaian
Instabilities, Elasticity, and Wetting Effect in Multilayer Heteroepitaxial Growth T9.2
Zhi-Feng Huang and Rashmi C. Desai
On the Manipulation of Nanoscale Self-Assembly by Elastic Field T9.3
Y.F. Gao
Self-Organized Superlattices in GaInAsSb Grown on Vicinal Substrates T9.6
C.A. Wang, C.J. Vineis, and D.R. Calawa
Optical and Structural Properties of InAs/GaSb Nanostructures T9.9
D.W. Stokes, J.H Li, R.L. Forrest, S.L. Ammu, J.C. Lenzi, S.C. Moss, B.Z. Nosho, E.H. Aifer, B.R. Bennett, and L.J. Whitman
Effects Due to and Derived From Spontaneous Ordering in III-V Semiconductor Alloys T10.1
Yong Zhang and A. Mascarenhas
Effects of Surfactants N and Br on Ordering in GaInP T10.4
D.C. Chapman, A.D. Howard, L. Rieth, R.R. Wixom, and G.B Stringfellow
Quadruple-Period Ordering in MBE GaAsSb Alloys T10.5
Iskander G. Batyrev, Andrew G. Norman, Shengbai Zhang, and Su-Huai Wei
Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy T10.6
Brian P. Gorman, Andrew G. Norman, Reiko Lukic-Zrnic, Terry D. Golding, Chris L. Littler
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