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Innovation Providing New Multiple Functions in Phase-Change Materials To Achieve Cognitive Computing HH1.1
Stanford R. Ovshinsky and Boil Pashmakov
Understanding the Electro-Thermal and Phase-Transformation Processes in Phase-Change Materials for Data Storage Applications HH1.2
C.D. Wright, M. Armand, M.M. Aziz, S. Senkader, and W. Yu
Conductive Transparent Probes and Their Application to High-Density Phase-Change Data Storage by Using Current Injection HH1.3
Tooru Murashita
Amorphous-to-Polycrystal Transition in GeSbTe Thin Films HH1.4
S. Privitera, C. Bongiorno, E. Rimini , R. Zonca, A. Pirovano, and R. Bez
Study of the Structural Transformation of Ge2Sb2Te5 Induced by Current Pulse in Phase Change Memory HH1.5
Rong Zhao, Tow Chong Chong, Lu Ping Shi, Pik Kie Tan, Hao Meng, Xiang, Hu, Ke Bin Li, and An Yan Du
Thermal Analysis of Nonvolatile and Non Rotation Phase Change Memory Cell HH1.8
L.P. Shi, T.C. Chong, J.M. Li, H.X. Yang, and J.Q. Mou
Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications HH2.1
Tyler A. Lowrey, Stephen J. Hudgens, Wally Czubatyj, Charles H. Dennison, Sergey A. Kostylev, and Guy C. Wicker
Application of High Throughput Methods to the Development of Materials For Non-Magnetic Storage HH2.4
C. Eric Ramberg, Y. Wang, Q. Fan, E. McDermott, J. Wang, K. Kenyon, M. Field, M. Hornbostel, S. Guan, and S. Nguyen
Local Surface Modification of ECR Sputtered Carbon Film and Its Application to Ultra High Density Data Storage HH2.5
S. Tsuchitani, M. Isozaki, and R. Kaneko, I. Tanaka, and S. Hirono
Room Temperature Dielectric Function of Low Dimensional TlMeX2 HH2.7
Nazim Mamedov, Kazuki Wakita, Seiji Akita, and Yoshikazu Nakayama
Effect of As-Deposited Residual Stress on Transition Temperature of VO2 Films HH2.8
Kuang Yue Tsai, Tsung-Shune Chin, Han-Ping D. Shieh, and Cheng Hsin Ma
Memory Effects in Manganese Perovskites HH2.9
N. Noginova, G. Chelule, and G.B. Loutts
Optical Properties and Phase Transformation Kinetics of Ge-Sb-Te-(N) Alloy Thin Films Investigated by Ellipsometry HH3.2
Sang Youl Kim
Simulation of Crystallization Processes in Phase Change Optical Discs HH3.3
Bérangère Hyot, Ludovic Poupinet, and Pierre Desré
TEM Study of InSbTe Crystal Morphology as a Function of Crystallization Conditions HH3.5
Marcel A. Verheijen, Andrei Mijiritskii, and Bart J. Kooi
In Situ TEM Study of the Crystallization of Thin Films Composed of Sb3.6Te With Ge HH3.6
Bart J. Kooi, Willemijn M.G. Groot, and Jeff Th.M. De Hosson
Modeling InSe Phase-Change Materials HH3.7
K. Kohary, V.M. Burlakov, D. Nguyen-Manh, and D.G. Pettifor
Kinetics of Crystal Nucleation and Growth in Thin Films of Amorphous Te Alloys Measured by Atomic Force Microscopy HH3.8
J. Kalb, F. Spaepen, and M. Wuttig
Effect of Ionic Bond in Recording Materials on Characteristics of Phase-Change Optical Disk HH4.1
Motoyasu Terao
Media Technologies for 20 GB Single Layer and 36 GB Dual Layer Phase Change Rewritable Disc “HD DVD-ARW” HH4.2
Sumio Ashida, Keiichiro Yusu, Tsukasa Nakai, Takayuki Tsukamoto, Katsutaro Ichihara, Noritake Ohmachi, Naoki Morishita, Akihito Ogawa, and Naomasa Nakamura
Key Technology for Ultra Density Optical HH4.5
Robert E. Somekh and Clare E. Davies
Mechanisms of Initialization of Doped Sb-Te Phase-Change Media HH4.6
Samantha J. Towlson, Clifford A. Elwell, Clare E. Davies, and A. Lindsay Greer
Optical Properties of Multi-Layer Chalcogenide Thin Film for Optical Recording Media HH4.7
Myung-Jin Kang, Chan-Gyung Park, and Se-Young Choi
Explosive Crystallization in Eutectic Materials of Phase Change Optical Memory HH5.1
Masahiro Okuda, Hirokazu Inaba, and Shouji Usuda
Characterization of Ultra-Fast Phase Change Optical Disk With GaSb Material HH5.2
Kazunori Ito, Hiroko Tashiro, Makoto Harigaya, Eiko Suzuki, Katsuhiko Tani, Noriyuki Yiwata, Nobuaki Toyoshima, Akiko Kitano, and Kenichi Kato
Femtosecond Laser-Induced Crystallization in As-Deposited Ge1Sb2Te4 Films HH5.7
Qin F. Wang, Lu P. Shi, Su M. Huang, Xiang S. Miao, Kai P. Wong, and Tow C. Chong
Structure Analysis of Amorphous Thin Films of GeSbTe Compounds by Grazing Incidence X-ray Scattering HH5.8
Masugu Sato, Toshiyuki Matsunaga, Takashi Kouzaki, and Noboru Yamada
Multi Layer Disk Design for Near Field Phase-Change Recording HH6.1
Koichiro Kishima, Isao Ichimura, Kimihiro Saito, Kenji Yamamoto, Atsushi Iida, and Kiyoshi Osato
Nonlinear Characteristics of Super Resolution Chalcogenide Thin Film HH6.6
Se-Young Kim, Myung-Jin Kang, and Se-Young Choi
Design of Holographic Recording Conditions With Optical Densities of Thick Azopolymer Films HH6.8
Shin Yasuda, Katsunori Kawano, Jiro Minabe, Tatsuya Maruyama, Kazuhiro Hayashi and Yasuhiro Ogasawara
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