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Point Eefects in Thin HfAlOx Films Probed by Monoenergetic Positron Beams E1.2
Akira Uedono, Riichiro Mitsuhashi, Atsushi Horiuchi, Kazuyoshi Torii, Kikuo Yamabe, Keisaku Yamada, Ryouichi Suzuki, Toshiyuki Ohdaira, and Tomohisa Mikado
Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-k Dielectric Layers on Silicon E1.4
A.L. Stesmans and V.V. Afanas'ev
Influence of Nitrogen Bonds on Electrical Properties of HfAlOx(N) Films Fabricated Through LL-D&A Process Using NH3 E1.6
Kunihiko Iwamaoto, Tomoaki Nishimura, Koji Tominaga, Tetsuji Yasuda, Koji Kimoto, Toshihide Nabatame, and Akira Toriumi
Characterization of the Electronic Structure and Optical Properties of Al2O3, ZrO2 and SrTiO3 From Analysis of Reflection Electron Energy Loss Spectroscopy in the Valence Region E1.9
G.L. Tan, L.K. Denoyer, R.H. French, A. Ramos, M. Gautier-Soyer, and Y.M. Chiang
Properties of Ultra-Thin Thermal Silicon Nitride E2.2
Katherine M. Buchheit, Hideki Takeuchi, and Tsu-Jae King
Stability of Nitrogen and Hydrogen in High-k Dielectrics E2.4
K.P. Bastos, R.P. Pezzi, L. Miotti, G.V. Soares, C. Driemeier, J. Morais, and I.J.R. Baumvol
Study of HfAlOx Films Deposited by Layer-by-Layer Growth for CMOS High-k Gate Dielectrics E2.5
Akira Toriumi, Toshihide Nabatame, and Tsuyoshi Horikawa
Disorder Characterization of Oxide/Silicon Interfaces From I-V Curves E3.1
Louis Nemzer and Fredy R. Zypman
Oxide-Semiconductor Interface Characterization Using Kelvin Probe-AFM in Combination With Corona-Charge Deposition E3.2
Bert Lägel, Maria D. Ayala, Elena Oborina, and Rudy Schlaf
Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces E3.3
L. Tsetseris, X. Zhou, D.M. Fleetwood, R.D. Schrimpf, and S.T. Pantelides
Ultra Shallow Incorporation of Nitrogen Into Gate Dielectrics by Pulse Time Modulated Plasma E3.9
Seiichi Fukuda, Yoshimune Suzuki, Tomoyuki Hirano, Takayoshi Kato, Akihide Kashiwagi, Masaki Saito, Shingo Kadomura, Youichi Minemura, and Seiji Samukawa
Conductance Transient Comparative Analysis of ECR-PECVD Deposited SiNx, SiO2/SiNx and SiOxNy Dielectric Films on Silicon Substrates E3.12
H. Castán, S. Dueñas, J. Barbolla, A. Del Prado, E. San Andrés, I. Mártil and G. González-Díaz
Thermally Grown and Reoxidized Nitrides as Alternative Gate Dielectrics E3.14
Alexandra Ludsteck, Waltraud Dietl, Hinyiu Chung, Joerg Schulze, Zsolt Nenyei, and Ignaz Eisele
Low-Temperature Growth of HfO2 Dielectric Layers by Plasma-Enhanced CVD E3.15
M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, D. Barreca, A. Gasparotto, and E. Tondello
On the Thermal Re-Oxidation of Silicon Oxynitride E3.17
Arturo Morales-Acevedo and G. Francisco Pérez-Sánchez
On the Interface Quality of MIS Structures Fabricated From Atomic Layer Deposition of HfO2 , Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films E3.18
S. Dueñas, H. Castán, H. García, J. Barbolla, K. Kukli, M. Ritala , and M. Leskelä
Crystallinity and Wet Etch Behavior of HfO2 Films Grown by MOCVD E3.19
Katherine L. Saenger, Cyril Cabral Jr., Paul C. Jamison, Edward Preisler, and Andrew J. Kellock
Determination of Nano Fluctuations in Surface Oxides of GaSb With Br-IBAE E3.20
K. Krishnaswami, B. Krejca, S.R. Vangala, C. Santeufemio, L.P. Allen, M. Ospina, X. Liu, C. Sung, K. Vaccaro, and W.D. Goodhue
High-k ZrO2 Gate Dielectric on Strained-Si E3.22
S. Bhattacharya, S. K. Samanta, S. Chatterjee, John McCarthy, B.M. Armstrong, H.S. Gamble, C.K. Maiti, T. Perova, and A. Moore
Silicide Formation at HfO2/Si and ZrO2/Si Interfaces Induced by Ar+ Ion Bombardment E3.25
Yu. Lebedinskii, A. Zenkevich, D. Filatov, D. Antonov, J. Gushina, and G. Maximov
Characterization of High-k Dielectrics by Combined Spectroscopic Ellipsometry (SE) and X-Ray Reflectometry (XRR) E3.29
L. Sun, C. Defranoux, J.L. Stehle, P. Boher, P. Evrard, E. Bellandi, and H. Bend
Optical and Dielectric Properties of Eu- and Y-Polytantalate Thin Films E3.31
Vladimir Vasilyev, Alvin Drehman, Helen Dauplaise, Lionel Bouthillette , Mark Roland, Alex Volinsky, Stefan Zollner, and Wentao Qin
Study of Metal Gate Work Function Modulation Using Plasma and SiH4 Treated TiN Thin Films E4.5
F. Fillot, S. Maîtrejean, T. Farjot, B. Guillaumot, B. Chenevier , and G. Passemard
Structural Comparisons of SiOx and Si/SiOx Formed by Passivation of Single-Crystal Silicon by Atomic and Molecular Oxygen E4.7
Maja Kisa, Ray D. Twesten, and Judith C. Yang
Nitrided Hafnium Silicate Film Formation by Sequential Process Using a Hot Wall Batch System and Its Application to MOS Transistor E4.9
Tomonori Aoyama, Kazuyoshi Torii, Riichirou Mitsuhashi, Takeshi Maeda, Satoshi Kamiyama, Atsushi Horiuchi, Hiroshi Kitajima, and Tsunetoshi Arikado
Atomic-Scale Investigation of the Dielectric Screening at the Interface Between Silicon and Its Oxide E5.1
Feliciano Giustino and Alfredo Pasquarello
Ab Iinitio Study on the gamma-Al2O3 Surfaces and Interfaces E5.2
Henry P. Pinto and Simon D. Elliott
Theoretical Analysis of Oxygen Diffusion in Monoclinic HfO2 E5.4
Minoru Ikeda, Georg Kresse, Toshihide Nabatame, and Akira Toriumi
Bonding and Epitaxial Relationships at High-k Oxide:Si Interfaces E5.5
J. Robertson and P.W. Peacock
The Band Alignment Problem at the Si-High-k Dielectric Interface E5.6
A.A. Demkov, L.R.C. Fonseca, J. Tomfohr, and O.F. Sankey
p-Type in ZnO:N by Codoping With Cr E6.1
E. Kaminska, A. Piotrowska, J. Kossut, R. Butkute, W. Dobrowolski, K. Golaszewska, A. Barcz, R. Jakiela, E. Dynowska, E. Przezdziecka, and D. Wawer
Microstructure and Electrical Properties of Zinc Oxide Thin Film Varistors Prepared by RF Sputtering E6.2
Keng-Ming Chang, Chuan-Pu Liu, and Chon-Ming Tsai
Electronic Structure of Zn(Mn)O Surface Alloy—A Resonant Photoemission Study E6.4
E. Guziewicz, K. Kopalko, J. Sadowski, M. Guziewicz, and Z. Golacki
Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox/CeO2/YSZ–Buffered Si Substrates by Pulsed Laser Deposition E6.5
Takamitsu Higuchi, Koichi Morozumi, Setsuya Iwashita, Masaya Ishida, and Tatsuya Shimoda
Elementary Processes During the Epitaxial Growth of Metal Oxides: MgO/MgO(001) E6.7
Gregory Geneste; Joseph Morillo; Fabio Finocchi, and Marc Hayoun
Precise Characterization of Silicon on Insulator (SOI) and Strained Silicon on Si 1-x Ge x on Insulator (SSOI) Stacks With Spectroscopic Ellipsometry E6.9
Lianchao Sun, Jean-Claude Fouere, Christophe Defranoux, Patrice Heinrich, Christine Dos Reis, Thierry Emeraud, Jean-Philippe Piel, and Jean-Louis Stehle
AlON Thin Films Formed by ECR Plasma Oxidation for High-K Gate Insulator Application E6.10
Go Yamanaka, Takafumi Uchikawa, Shun-ichiro Ohmi, and Tetsushi Sakai
Substrate/Oxide Interface Interaction in LaAlO3/Si Structures E6.12
T. Busani and R.A.B. Devine
Structural and Electrical Properties of HfO 2 Films Grown by Atomic Layer Deposition on Si, Ge, GaAs and GaN E6.14
Marco Fanciulli, Sabina Spiga, Giovanna Scarel, Grazia Tallarida, Claudia Wiemer, and Gabriele Seguini
Silicate Interface Formation During the Deposition of Y2O3 on Si E6.15
C. Durand, C. Vallée, C. Dubourdieu, M. Bonvalot, E. Gautier, and O. Joubert
Atomic Layer Deposition of Silica and Group IV Metal Oxides Nanolaminates E6.24
Lijuan Zhong, Fang Chen, Stephen A. Campbell, and Wayne L. Gladfelter
Improved Structural Properties of Sputtered Hafnium Dioxide on Silicon and Silicon Oxide for Semiconductor and Sensor Applications E6.25
H. Grüger , Ch. Kunath, E. Kurth, W. Pufe, and S. Sorge
Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing E6.27
M. Kadoshima, K. Yamamoto, H. Fujiwara, K. Akiyama, K. Tominaga, N. Yamagishi, K. Iwamoto, M. Ohno, T. Yasuda, T. Nabatame , and A. Toriumi
Atomic Scale Modeling of ZrO2 and HfO2 Atomic Layer Deposition on Silicon: Linking Density Functional Theory and Kinetic Monte Carlo E6.28
A. Estève, L. Jeloaica, G. Mazaleyrat, A. Dkhissi, M. Djafari Rouhani, A. Ali Messaoud, and N. Fazouan
Transparent Transistors Based on Semiconducting Oxides E6.30
Y.W. Kwon, Y. Li, Y.W. Heo, M. Jones, Vijay, B.S. Jeong, J. Zhou, S. Li, P. Holloway, and D.P. Norton
Study of Work Function of CVD WSix Thin Film on High-k Eielectric E6.32
S. Maîtrejean, S. Allégret, F. Fillot, T. Farjot, B. Guillaumot, and G. Passemard
Oxide Reduction in Advanced Metal Stacks for Microelectronic Applications E6.33
Wentao Qin, Alex A. Volinsky, Dennis Werho, and N. David Theodore
Growth of Perovskites with Crystalline Interfaces on Si(100) E7.3
G.J. Norga, A. Guiller, C. Marchiori, J.P. Locquet, H. Siegwart, D. Halley, C. Rossel, D. Caimi, J.W. Seo, and J. Fompeyrine
Electrical Characteristics of Metal-(La0.27Y0.73)2O3-Silicon Capacitors E7.7
E.J. Preisler, N.A. Bojarczuk, and S. Guha
Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen E8.1
J.R. Williams, T. Isaacs-Smith, S. Wang , C. Ahyi, R.M. Lawless, C.C. Tin, S. Dhar, A. Franceschetti, S.T. Pantelides, L.C. Feldman G. Chung, and M. Chisholm
Hetero-Epitaxy of Crystalline Perovskite Oxides on GaAs(001) E8.4
Y. Liang, J. Kulik, Y. Wei, T. Eschrich, J. Curless, B. Craigo, and S. Smith
The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation E8.5
B.P. Gila, B. Luo, J. Kim, R. Mehandru, J.R. LaRoche, A.H. Onstine, E. Lambers, K. Siebein, C.R. Abernathy, F. Ren, and S.J. Pearton
Growth of Scandium Magnesium Oxide on GaN E8.6
A.H. Onstine, A. Herrero, B.P. Gila, J. Kim, R. Mehandru, C.R. Abernathy, F. Ren, and S.J. Pearton
Liquid Injection MOCVD of Rare-Earth Oxides Using New Alkoxide Precursors E9.2/C9.2
Paul A. Williams, Anthony C. Jones, Helen C. Aspinall, Jeffrey M. Gaskell, Paul R Chalker, Paul A. Marshall, Yim F. Loo, and Lesley M. Smith
Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al2O3/Si3N4/Si Buffer Layer E9.6/C9.6
Yoshihisa Fujisaki, Kunie Iseki, and Hiroshi Ishiwara
Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors E9.7/C9.7
T. Yoshimura, D. Ito, H. Sakata, N. Shigemitsu, K. Haratake, A. Ashida, and N. Fujimura
Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) FETs Using (Sr,Sm)0.8Bi2.2Ta2O9 (SSBT) Thin Films E9.8/C9.8
Hirokazu Saiki and Eisuke Tokumitsu
Selective Deposition of C-axis Oriented Pb5Ge3O11 on the Patterned High k Gate Oxide by MOCVD Processes E9.9/C9.9
Tingkai Li, Sheng Teng Hsu, Bruce Ulrich, and Dave Evans
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