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2003 FALL MEETING PROCEEDINGS

Symposium B
Materials, Integration and Packaging Issues for High-Frequency Devices

Editors: P. Muralt, Y.S. Cho, M. Klee, J-P. Maria, C.A. Randall, C. Hoffmann

MRS Proceedings Volume 783
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Low Sintering Temperature of CuO-Fluxed Ag(Nb,Ta)O3 Dielectric Ceramics B1.3
Chiping Wang, Thomas Shrout, Gaiying Yang, Hyo-Tae Kim, Do-Kyun Kwon, and Michael T. Lanagan

Wireless and RF Module Packaging Using Low Loss Ceramic and Low Loss Organic Materials B1.4
James J. Logothetis, Daniel I. Amey, and Timothy P. Mobley

Material Issues of Low Temperature Co-Fired Ceramic (LTCC) Fine Pitch Chip Scale Package (CSP) Designs B1.6
Megan M. Owens, Joseph W. Soucy, Thomas F. Marinis, Kevin A. Bruff, and Henry G. Clausen

Techniques for Assessing the Performance of Circuit Materials at Microwave and Millimeter-Wave Frequencies B1.7
Charles E. Free

In-Plane Ferroelectricity in Strontium Titanate Thin Films B2.2
K.F. Astafiev, V.O. Sherman, M. Cantoni, A.K. Tagantsev, N. Setter, P.K. Petrov, T. Kaydanova, and D.S. Ginley

High-Q Integrated RF Passives and RF-MEMS on Silicon B3.1
Joost T.M. van Beek, Marc H.W.M. van Delden, Auke van Dijken, Patrick van Eerd, Andre B.M. Jansman, Anton L.A.M. Kemmeren, Theo G.S.M. Rijks, Peter G. Steeneken, Jaap den Toonder, Mathieu J.E. Ulenaers, Arnold den Dekker, Pieter Lok, Nick Pulsford, Freek van Straten, Lenhard van Teeffelen, Jeroen de Coster, and Robert Puers

Cu-Compatible Ultra-High Permittivity Dielectrics for Embedded Passive Components B3.2
Jon F. Ihlefeld, Angus I. Kingon, William Borland, and Jon-Paul Maria

Design and Performance of Polymeric Ultra-Thin Substrates for Use as Embedded Capacitors: Comparison of Unfilled and Filled Systems With Ferroelectric Particles B3.3
John Andresakis, Takuya Yamamoto, Pranabes Pramanik, and Nick Buinno

High Frequency Loss Mechanism in Polymers Filled with Dielectric Modifiers B3.5
J. Obrzut, A. Anopchenko, K. Kano, and H. Wang

Passive Isolators Based on Barium Ferrite Sputtered Films B3.8
M. Le Berre, S. Capraro , J.P. Chatelon, H. Joisten, T. Rouiller, B. Bayard, D. Barbier, and J.J. Rousseau

Solidly Mounted Bulk Acoustic Wave Filters B4.1
H.P. Loebl, C. Metzmacher, R.F. Milsom, A. Tuinhout, P.Lok, and F.van Straten

Investigation of Highly c-Axis Oriented AlN Thin Film Re-Growth B4.2
F. Martin, P. Muralt, and M.-A. Dubois

Theoretical and Experimental Study of Barium Zinc-Cadmium Tantalate-Based Microwave Dielectrics B4.7
Shaojun Liu, Mark Van Schilfgaarde, Jian Sun, Louisa Badd, David Smith, Novak S. Petrovixc, R. Taylor, and N. Newman

Tunability of Bi-Rich BZN Cubic Pyrochlore Thin Films by Reactive Sputtering B5.3
Dong Hyuk Back, Yoon Seop Lee, Young Pyo Hong, Joong Ho Moon, and Kyung Hyun Ko

Dielectric Properties of BaTiO3 Based Ceramics Prepared From Nano-Powders B5.5
Xiao-Hui Wang, Ren-Zheng Chen, Zhi-Lun Gui, and Long-Tu Li

The Microstructures and Grain Boundary Segregations of Ceramic Barium Titanate Processed in Microwave Field B5.7
Hanxing Liu, Zhongqin Tian, Jian Zhou, Hongtao Yu, Long Zou, and Shixi Ouyang

Pulsed DC Reactive Magnetron Sputtering of AlN Thin Films on High Frequency LTCC Substrates B5.10
Jung W. Lee, Jerome J. Cuomo, Baxter F. Moody, Yong S. Cho, and Roupen L. Keusseyan

A New Dielectric Material System of xLa(Mg1/2Ti1/2)O3-(1-x)CaTiO3 at Microwave Frequency B5.11
Yuan-Bin Chen, Cheng-Liang Huang, and Che-Win Row

Ordered Structures in Ba(Cd1/3Ta2/3)O3 Microwave Ceramics: A Transmission Electron Microscopy Study B5.12
J. Sun, S.J. Liu, N. Newman, and David. J. Smith

Microwave Dielectric Proper ties of (1-x)CaTiO3-xNd(Mg1/2Ti1/2)O3 Ceramics System B5.13
Cheng-Liang Huang, Yuan-Bin Chen, and Ching-Wen Lo

Microwave Dielectric Properties of LaScO3-TiO2 Materials B5.14
Do-Kyun Kwon, Michael T. Lanagan, and Thomas R. Shrout

Rapid Prototype Fabrication of Custom Chip Scale Packages B5.16
Megan M. Owens, Joseph W. Soucy, Thomas F. Marinis, and Henry G. Clausen

High Frequency, High Density Interconnect Using AC Coupling B6.1
Paul Franzon, Angus Kingon, Stephen Mick, John Wilson, Lei Luo, Karthik Chandrasakhar, Jian Xu, Salvatore Bonafede, Alan Huffman, Chad Statler, and Richard LaBennett

High-Density, Low-Loss MOS Decoupling Capacitors Integrated in a GSM Power Amplifier B6.3
F. Roozeboom, A. Kemmeren, J. Verhoeven, E. van den Heuvel, H. Kretschman, and T. Fric

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates B6.5
Samuel A. Alterovitz, Carl H. Mueller, Edward T. Croke, and George E. Ponchak

RF-MEMS: Materials and Technology, Integration and Packaging B6.6
Harrie A. C. Tilmans

Photodefinable Metal Oxide Dielectrics: A Novel Method for Fabricating Low Cost RF Capacitive MEMS Switches B6.7
Guoan Wang, Augustin Jeyakumar, John Papapolymerou, and Clifford L. Henderson

Microstructural Evolution of Cu/Ta/GaAs Multilayers With Thermal Annealing B7.2
Wei-Cheng Wu, Chang-You Chen, Chen-Shih Lee, Edward Yi Chang, and Li Chang

Integration of III-V Optoelectronic Components on Si Platform B7.4
Alex Katsnelson, Vadim Tokranov, Michael Yakimov, and Serge Oktyabrsky

Improvement of Tantalum Pentoxide Metal-Insulator-Metal Capacitors for SiGe RFBiCMOS Technology B7.6
Hongjiang Sun, Ka Man Lau, Eyup Aksen, and Nancy Bell

Preparation and Use of Chip Capacitors in Ultra-Dense Multi-Chip Modules B7.8
D. Pryputniewicz, C. Kondoleon, J. Haley, and T. Marinis

Surface Oxide Evolution on Al-Si Bond Wires B7.11
Wentao Qin, Ray Doyle, Tom Scharr, Mahesh Shah, Mike Kottke, Dennis Werho, and N. David Theodore



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