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A Publication of the Materials Research Society
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SPECIAL FEATURES
From Transistors to Lasers and Light-Emitting Diodes
2004 Von Hippel Award Address, 509
N. Holonyak Jr.
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Addressing Grand Energy Challenges through Advanced Materials
2004 MRS Fall Meeting Plenary Address, 518
M.S. Dresselhaus, G.W. Crabtree, and M.V. Buchanan
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TECHNICAL FEATURES
Network Phases in Block Copolymer Melts
2004 David Turnbull Lecture, 525
F.S. Bates
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Importance of Pico-Scale Topography of Surfaces for Adhesion,
Friction, and Failure
2004 MRS Medalist Presentation, 533
J.N. Israelachvili
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Innovations in Biomaterials: Achievements and Opportunities,
540
R.M. Bergman
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Biomaterials for Regenerative Medicine, 546
S.I. Stupp
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Barbour, Drzaic, Higashi, and Vogel to Chair 2006 MRS Spring Meeting, 555
MRS Selects Outstanding Symposium Papers, 556

Abstracts for August 2005 Journal of Materials Research, 558

Research/Researchers, 500
Technology
Advances, 505
Metal Rubber; SMART Layer
Science
Policy, 507
Report on DoD Basic Research Seeks to Redress Imbalances in Unfettered
Research Efforts, J. Ouellette
Advertisers in This Issue, 532
Conference
Reports, 557
NDSI 2005
Library,
561
Fundamentals of Polymer Engineering, 2nd Ed., Revised and Expanded,
A. Kumar and R.K. Gupta, reviewed by D. Martin
Silicon: Evolution and Future of a Technology, P. Siffert and E. Krimmel,
reviewed by D.V. Singh
Field Mathematics for Electromagnetics, Photonics, and Materials Science:
A Guide for the Scientist and Engineer, B.J. Maxum, reviewed by S.M.
Black
Calendar, 562
Classified, 564
Posterminaries,
568
Growing Up with Popular Culture, A. King
Volume 30, No. 7
July 2005
Masthead
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ON THE COVER: Photographs in the foreground are from Von Hippel Award recipient Nick Holonyak Jr.'s 40 years of seminal research stretching from the earliest days of III–V epitaxial crystal growth to today's advanced high-brightness light-emitting diodes. (far left) Halide GaAsP crystal (1960–1962) grown by vapor phase epitaxy (VPE), shown with the first (1962) GaAsP visible-spectrum laser. (center) Holonyak, left, and John Bardeen examine prototype red–orange–yellow InGaP LEDs. Photograph dates from around 1972. (right, top) Page from Holonyak's patent for closed-tube halide VPE crystal growth (1960–1962) of III–V crystals, including GaAsP and various heterojunctions. (right, bottom) First visible-spectrum diode laser (1962, GaAsP III–V alloy), photographed by its own light. Horizontal arrows delineate the diode; the other arrow points out a diffraction spot. (See the article by Holonyak on p. 509.) (background) Colored micrograph of a highly porous polyurethane scaffold developed for tissue engineering. (See the article by Bergman on p. 540.)
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