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ADVANCES IN SILICON CARBIDE ELECTRONICS

Advances in Silicon Carbide Electronics, 273
J.C. Zolper and M. Skowronski, Guest Editors
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Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices, 280
J.J. Sumakeris, J.R. Jenny, and A.R. Powell
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Interface Passivation for Silicon Dioxide Layers on Silicon Carbide, 288
S. Dhar, S. Wang, J.R. Williams, S.T. Pantelides, and L.C. Feldman
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Silicon Carbide Power Field-Effect Transistors, 293
J.H. Zhao
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SiC Bipolar Power Devices, 299
T.P. Chow
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Degradation of SiC High-Voltage pin Diodes, 305
S. Ha and J.P. Bergman
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SiC MESFETs for High-Frequency Applications, 308
S. Sriram, A. Ward, J. Henning, and S.T. Allen
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IUMRS Seeks Nominations for Somiya Award, 312
XIV International Materials Research Congress to be Held in Cancun in August 2005, 312

Abstracts for May 2005 Journal of Materials Research

John Bravman Receives 2004 Woody Award, 313
MRS Invites Nominations for the Von Hippel Award, Turnbull Lectureship, and MRS Medal, 313
Visitors Encounter Strange Matter from Boston and Halifax to Toledo and Boise, 316

Letter from the President, 260
The Nano Age?, D.J. Eaglesham

Research/Researchers, 262

Science Policy, 269

Advertisers in This Issue, 307

Upcoming Conferences, 318
PLMCN5

Library, 318
Thermally Activated Mechanisms in Crystal Plasticity, D. Caillard and J.L. Martin, reviewed by F.R.N. Nabarro
Novel Nanocrystalline Alloys and Magnetic Nanomaterials, B. Cantor, ed., reviewed by R.W. Cahn
Handbook of Thick- and Thin-Film Hybrid Microelectronics, T.K. Gupta, reviewed by S. Burkett
Optical Applications of Liquid Crystals, L. Vicari, ed., reviewed by D.A. Higgins

Classified, 324

Volume 30, No. 4
April 2005
Masthead

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ON THE COVER: Advances in Silicon Carbide Electronics. (background) Growth surface of a silicon carbide crystal grown at 2050°C. The center of the 2 mm x 1.5 mm image contains an open-core superscrew dislocation referred to as micropipe. This defect (along with other screw dislocations) serves as the source of growth steps for step-flow growth. (upper right) Atomic force microscopy image of a micropipe defect intersecting the SiC growth surface. The step height in this image is 1.5 nm and corresponds to one unit cell of 6H-SiC. The black area in the middle of the image is an open core of a superscrew dislocation (Courtesy of G.S. Rohrer). (lower left) Cross-polarized images of 3-in.-diameter SiC wafers, (left) grown in 2001 and (right) grown in 2003, detailing the improving quality of SiC wafers. The wafer on the right shows no evidence of low-angle grain boundaries, which are readily visible in the wafer on the left. See the technical theme that begins on p. 273.