Volume 28, Number 5
May 2003
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A Publication of the Materials Research Society

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PHOTONIC MATERIALS FOR OPTICAL COMMUNICATIONS

Photonic Materials for Optical Communications, 340
H. Hillmer and R. Germann, Guest Editors
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Material Properties of III-V Semiconductors for Lasers and Detectors, 345
C.W. Tu and P.K.L. Yu
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III-V Nitrides: A New Age for Optoelectronics, 350
A. Hangleiter
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Organic Materials for Photonic Devices, 354
T. Fuhrmann and J. Salbeck
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Material Aspects of Standard Transmission Optical Fibers, 360
P. Guenot
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Silica-Based Planar Lightwave Circuits and Their Applications, 365
Y. Hibino
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Dielectric Materials for Thin-Film-Based Optical Communications Filters, 372
R.B. Sargent and N.A. O'Brien
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E-MRS Celebrates 20th Anniversary , 378

Materials Science Students Visit MRS Headquarters, 382

Hendrik Schön Removed as Recipient of MRS's Outstanding Young Investigator Award, 382

Abstracts for June 2003 Journal of Materials Research, 390

Research/Researchers, 332

Science Policy, 338
OSTP Guidelines Receive High Marks in Wake of Misconduct Cases in 2002
J. Ouellette

Advertisers in This Issue, 376

Conference Reports, 383
MATFORUM 2002; [NA]PMRC 2003

Library, 388
Jack: Straight from the Gut, J. Welch with J.A. Byrne, reviewed by J.H. Westbrook; Damage Tolerance and Durability of Material Systems, K.L. Reifsnider and S.W. Case, reviewed by M.G. Bader; Polymer Analysis, B. Stuart, reviewed by J. Mark; and Fundamental Aspects of Electrometallurgy, K.I. Popov, S.S. Djokic, and B.N. Grgur, reviewed by D. Fray

Calendar, 393

Classified, 396

Posterminaries, 400
Bottleneck Science
A. King

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ON THE COVER: Photonic Materials for Optical Communications. (left, top) Scanning electron microscope image of a 1.55 micrometer AlGaInAs/InP in-plane laser, including a tunable three-section bent-waveguide chirped distributed-feedback grating. (left, bottom) Closer view of the active layers: 10 strain-compensated quantum wells with tensile-strained AlGaInAs barriers and compressively strained AlGaInAs wells. (center, top) Photoluminescence spectrum (blue curve) and amplified spontaneous-emission spectrum (red curve) of the molecular glass 4-Spiro² with the steric molecular structure (schematic illustration), obtained for thin amorphous films. (center, middle) Near-field microscope image of a laterally grown GaN structure. (center, bottom) Blue-emitting GaInN/GaN wafer. (right, top) SEM image of a surface-micromachined 1.55 micrometer GaInAsP vertical-cavity surface-emitting laser composed of multiple membranes, each positioned by four suspensions connected to square supporting posts. (right, bottom) Closer view of the vertical resonator, consisting of a centered GaInAsP multiple-quantum-well laser active region embedded with two distributed Bragg reflector mirrors consisting of (Ga)In(As)P/air-gap periods. The structure at the bottom far left represents an electron wave resonator; the structure at the bottom far right represents a photon wave resonator. See the technical theme that begins on p. 340.