Volume 28, No. 2
February 2003
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A Publication of the Materials Research Society

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SINGLE-EVENT UPSETS IN MICROELECTRONICS

Single-Event Upsets in Microelectronics, 107
H.H.K. Tang and N. Olsson, Guest Editors
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Single-Event Upsets in Microelectronics: Fundamental Physics and Issues, 111
H.H.K. Tang and K.P. Rodbell
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Impact of Single-Event Upsets in Deep-Submicron Silicon Technology, 117
R. Baumann
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Relations Between Basic Nuclear Data and Single-Event Upsets Phenomena, 121
J. Blomgren, B. Granbom, T. Granlund, and N. Olsson
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Circuit Responses to Radiation-Induced Upsets, 126
K. Bernstein
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Cosmic-Ray Neutrons on the Ground and in the Atmosphere, 131
P. Goldhagen
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Total Ionizing Dose and Displacement-Damage Effects in Microelectronics, 136
C.C. Foster
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MRS-Japan Will Host IUMRS-ICAM 2003 in October, 141

MRS-Singapore Will Host ICMAT 2003/IUMRS-ICA 2003, 141

IUMRS Seeks Nominees for 2003 Somiya Award on International Collaboration, 141

Hammond, Noufi, Roozeboom, and Trolier-McKinstry to Chair 2003 MRS Fall Meeting, 142

Abstracts for March 2003 Journal of Materials Research, 145

Letter from the President, 91
MRS FAQs
M.J. Mayo

Material Matters, 92
Materials and Nanotechnology
A. Navrotsky

Research/Researchers, 94

Technology Advances, 100
Thermochromic Materials
Low-Temperature Spray Process
Smart Textiles

Science Policy, 103

Public Affairs Forum, 105
The Story of the National Materials Advisory Board in the United States
J.M. Phillips and T. Marechaux

Advertisers in This Issue, 135

Conference Reports, 143
MRS-Africa

Library, 144

Classified, 148

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ON THE COVER: Single-Event Upsets in Microelectronics. Schematic illustration of the field-assisted funneling mechanism in a metal-oxide-semiconductor device hit by an ion. ILD is interlayer dielectric. M1 and M2 are metal levels produced by separate processes during fabrication. See the technical theme that begins on page 107.