Volume 26, No. 2
February 2001
A Publication of the Materials Research Society
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© Copyright 2001
Materials Research Society
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TECHNICAL FEATURES
Dynamic Studies of Semiconductor Growth Processes
Using In Situ Electron Microscopy, 94
2000 MRS Spring Meeting
Outstanding Young Investigator Presentation
F.M. Ross
Progress in the Atomic-Scale Analysis of Materials
with the
Three-Dimensional Atom Probe, 102
A. Cerezo, D.J. Larson, and G.D.W. Smith
Science and Technology at the Nanometer Scale
Using Vacuum-Deposited Organic Thin Films, 108
1999 MRS Fall Meeting
MRS Medal Presentation
S. Forrest
Prospects for Molecular-Scale Electronics,
113
M.A. Reed
Advances in Bi-Based High-Tc Superconducting
Tapes and Wires, 121
H. Kitaguchi and H. Kumakura
MATERIALS CHALLENGES FOR THE NEXT CENTURY
Yashoda's Vision:
Microscopy at All Levels, 127
S. Ranganathan
MRS NEWS
Preview: 2001 MRS Spring Meeting, 128
Kristi S. Anseth Named Outstanding Young Investigator for Work in Polymeric Biomaterials, 129
Nobel Laureate Alan J. Heeger to Give Plenary Address on Conducting Polymers at 2001 MRS Spring Meeting, 133
Clemens, Floro, Kornfield, and Suzuki to Chair 2001 MRS Fall Meeting, 143
Katz, Moll, and Nemanich Serve on the MRS Workshop Subcommittee for 2001, 144
MRS Bulletin Volume Organizers Guide Technical Theme Topics for 2002, 145
ABSTRACTS
Abstracts for March 2000 Journal of Materials Research, 146
DEPARTMENTS
Research/Researchers, 85
Advertisers
in This Issue, 89
Washington News, 90
Public Affairs Forum, 91
Support for Physical Sciences
and Engineering
M.S. Dresselhaus
2000 MRS Fall Meeting
Resources,
93
Classified,
149
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ON THE COVER: Dynamic
Studies of Semiconductor Growth Processes Using
In Situ Electron Microscopy. (top left) Strain-sensitive transmission
electron microscopy (TEM) image of small Ge islands grown on
a Si(001) specimen. Each island is around 50 nm in diameter;
the surrounding strain field exhibits bright and dark contrast.
(top right) Low-energy electron microscopy (LEEM) image of alloyed
GeSi islands grown on Si(001). The two possible island shapes
have distinctive contrast: pyramids appear as dark squares with
a white cross, while domes exhibit four bright pairs of facets.
(bottom left) Surface-sensitive TEM image of a thin Si(111) specimen.
Changes in intensity indicate the positions of steps. Steps on
the two surfaces of the specimen can be seen running in different
directions. (bottom right) Strain-sensitive TEM image of a dislocated
CoSi2 island grown on Si(111). Three sets of dislocations with
different Burgers vectors are visible. See the technical feature
that begins on p. 94.
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