Volume 25, No. 9 September 2000
A Publication of the Materials Research Society
© Copyright 2000
Materials Research Society
All rights reserved
SOFT PROCESSING FOR ADVANCED INORGANIC MATERIALS
Soft Processing for Advanced Inorganic Materials,
12
M. Yoshimura and J. Livage, Guest Editors
Soft Solution Processing: A Strategy for One-Step
Processing of Advanced Inorganic Materials, 17
M. Yoshimura, W. L. Suchanek, and K. Byrappa
The Synthesis of Photocatalysts Using the
Polymerizable-Complex Method, 27
M. Kakihana and K. Domen
Soft Chemical Routes to Heterostructured High-Tc
Superconducting Materials, 32
J.-H. Choy, S.-J. Kwon, S.-J. Hwang, and E.-S. Jang
Rectifying Self-Assembled Ultrathin Films,
40
T. P. Cassagneua, B. Sweryda-Krawiec, and J. H. Fendler
Electrochemical and Photoelectrochemical Processing
for Oxide Films, 47
Y. Matsumoto
A Soft Solution Processing Technique for Preparing
Ferrite Films and Their Applications, 51
M. Abe
MATERIALS CHALLENGES FOR THE NEXT CENTURY
Materials Science
2100? 57
R.R. Chianelli
MRS NEWS
MRS Seeks Nominees for Outstanding Young Investigator Award, 2001, 62
High-k Gate Dielectric and Transparent Conducting Oxide Explored in MRS Workshops, 64
ABSTRACTS
Abstracts for October 2000 Journal of Materials Research, 69
DEPARTMENTS
Editorial, 3
Research/Researchers, 4
Washington News, 10
Resources,
11
Advertisers
in This Issue, 50
Calendar, 72
Classified, 76
Posterminaries, 80
[Information from the Table of Contents may be reproduced]
|
Full Text of this issue is available to MRS Members in Acrobat PDF format If you are not a Member, you can join now by filling out the online Membership Application |
|
ON THE COVER: Images representing the background concept, process, and result of soft solution processing for advanced inorganic materials. Upper right: Energy diagram for the formation of BaTIO3. A huge amount of energy is necessary to create vapor, gas, or ion plasma from the solid as compared with the creation of aqueous solutions at the same temperature. This is the thermodynamic explanation for why processing of advanced materials using aqueous solutions consumes less energy in contrast to vapor/plasma processing. See the article that begins on p. 17. Upper left: Model of photoelectrochemical epitaxial growth (PEEG) on a single-crystal n-type oxide semiconductor. In the initial step, a hole created in the valence band under illumination moves to the surface and reacts with water to produce OH and/or an O- radical. The radicals immediately react with metal cations to form metal-oxide nuclei on the electrode surface. In the subsequent step, tunneling anodic current flows via surface states formed in the interface between the electrode surface and the deposited oxide nuclei, leading to epitaxial growth of the oxide. See the article that begins on p. 47. Lower left: Scanning electron microscopy observations of polyacrylate microspheres (4.5 um in diameter) that have been ferrite-coated with sonication (left) and without sonication (right), respectively, for the same time of 30 min. See the article that begins on p. 51. Images courtesy of Dr. T. Fujiwara, Tokyo Institute of Technology, Japan.
