March 1997
A Publication of the Materials Research Society
SILICON CARBIDE ELECTRONIC MATERIALS AND DEVICES
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Silicon Carbide Electronic Materials and Devices
M.A. Capano and R.J. Trew, Guest Editors
Physical Properties of SiC
W.J. Choyke and G. Pensl
SiC-Seeded Crystal Growth
R.C. Glass, D. Henshall, V.F. Tsvetkov, and C.H. Carter, Jr.
An Overview of SiC Epitaxial Growth
D.J. Larkin
Fundamentals of SiC-Based Device Processing
M.R. Melloch and J.A. Cooper, Jr.
Radio-Frequency Power Transistors Based on 6H- and 4H-SiC
K. Moore and R.J. Trew
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• ICEM-96 Joins 1996 MRS Fall Meeting
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• Julia Phillips Receives 1996 Woody Award
• MRS Council Approves Headquarters Building
• Graduate Student Award Finalists to Compete at the 1997 MRS Spring Meeting
• MRS Invites Nominations for the Von Hippel Award, MRS Medal, and Turnbull Lectureship
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• Abstracts for May 1997 Journal of Materials Research
• Abstracts of MRS Internet Journal of Nitride Semiconductor Research, Volume 1, Articles 15-25
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