February 1997
A Publication of the Materials Research Society
GaN AND RELATED MATERIALS FOR DEVICE APPLICATIONS
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GaN and Related Materials for Device Applications
S.J. Pearton and C. Kuo, Guest Editors
Reactive Molecular-Beam Epitaxy for Wurtzite GaN
S.N. Mohammad, W. Kim, A. Salvador, and H. Morkoç
Blue-Green Light-Emitting Diodes and Violet Laser Diodes
S. Nakamura
Implantation and Dry Etching of Group-III-Nitride Semiconductors
J.C. Zolper and R.J. Shul
GaN/AlGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
M.S. Shur and M.A. Khan
Defects and Interfaces in GaN Epitaxy
F.A. Ponce
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• ICAM'97/E-MRS'97 to Be Held in Strasbourg, France
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• Preview: 1997 MRS Spring Meeting
• Peercy to Give Plenary Speech on the Future of Semiconductor Materials Research
• Bowman Receives OYI Award for Work on Polymers
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• Abstracts for April 1997 Journal of Materials Research
• Abstracts of MRS Internet Journal of Nitride Semiconductor Research, Volume 1, Articles 1-14
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