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Volume 21, No. 7 July 1996 |
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A Publication of the Materials Research Society ELECTROCERAMIC THIN FILMS PART II: DEVICE APPLICATIONS
Part II: Device Applications O. Auciello and R. Ramesh, Guest Editors Structure and Device Characteristics of SrBi2Ta2O9-Based Nonvolatile Random-Access Memories J.F. Scott, F.M. Ross, C.A. Paz de Araujo, M.C. Scott, and M. Huffman Degradation Mechanisms in Ferroelectric and High-Permittivity Perovskites W.L. Warren, D. Dimos, and R.M. Waser High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories A.I. Kingon, S.K. Streiffer, C. Basceri, and S.R. Summerfelt Application of Electroceramic Thin Films to Optical Waveguide Devices D.K. Fork, F. Armani-Leplingard, and J.J. Kingston Ferroelectric Thin Films in Microelectromechanical Systems Applications D.L. Polla and L.F. Francis
C.A. Fleischer, C.L. Bauer, D.J. Massa, and J.F. Taylor Remarks on the Evolution of Materials Science W.W. Mullins
Resources Facts & Figures Washington News Public Affairs Forum Advertisers in This Issue Education Exchange Historical Note Library Calendar Classified Posterminaries |
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