MRS Bulletin

 

Volume 20, No. 5 May 1995


A Publication of the Materials Research Society

IN SITU, REAL TIME CHARACTERIZATION OF THIN-FILM GROWTH PROCESSES


  • Why In-Situ, Real Time Characterization of Thin-Film Growth Processes?, p. 14
    O. Auciello and A.R. Krauss, Guest Editors
  • Time-of-Flight, Ion-Beam Surface Analysis for In Situ Characterization of Thin-Film Growth Processes, p. 18
    A.R. Krauss, O. Auciello, and J.A. Schultz
  • In Situ Ellipsometry in Microelectronics,p. 24
    E.A. Irene and J.A. Woollam
  • Laser-Reflectance Interferometry Measurements of Diamond-Film Growth, p. 29
    C.D. Zuiker, D.M. Gruen, and A.R. Krauss
  • Analysis of Growing Films of Complex Oxides by RHEED, p. 32
    I. Bozovic and J.N. Eckstein
  • Total-Reflection X-Ray Fluorescence Spectroscopy for In Situ, Real-Time Analysis of Growing Films, p. 43
    T.A. Roberts and K.E. Gray
  • Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy, p. 49
    N. Dietz and K.J. Bachman

IUMRS


  • IUMRS General Assembly Meeting Held in Taiwan, p. 58

MRS NEWS


  • Journal of Materials Research Editor's Report, p. 60

ABSTRACTS


DEPARTMENTS


  • Letter from the President, p. 3
  • Research/Researchers, p. 5
  • Washington News, p. 10
  • Public Affairs Forum, p. 12
  • Resources, p. 13
  • Advertisers in this Issue, p. 57
  • Historical Note, p. 67
  • Calendar, p. 75
  • Classified, p. 78
  • Posterminaries, p. 80

 

 

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