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8th
Wide-Bandgap III-Nitride Workshop
September
29 – October 1, 2003
Omni Richmond Hotel
Richmond, Virginia, USA
Registration
(Online registration is now closed -- On-Site registration only)
Final Program Schedule
Topical Areas
Lodging and Travel
Poster
Session
View
the final list of participants
(opens an Excel spread sheet)
The
Wide-Bandgap III-Nitride Workshop is the 8th in a series that began
in St. Louis in 1992. Participation of the entire GaN materials
and device communities is encouraged. The program includes short
oral presentations on specific topics (listed
below) as well as poster sessions. Generous time for questions
has been scheduled, and no parallel sessions are planned. Participants
are encouraged to submit abstracts of short (15 minute) papers under
the following topical areas:
Topical
Areas:
| Topic
1: |
Nitride Substrate Development
Including Bulk Growth
of AlN, GaN, InN and their Alloys, Compliant & HVPE Substrates,
Stand-Alone GaN Substrate Templates, GaN ELO Templates, SiC,
ZnO and Other Novel Substrate Materials.
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| Topic
2: |
III-Nitride
Epitaxial Growth
MBE, MOCVD and HVPE techniques
|
| Topic
3: |
Properties
and Applications of Narrow Gap III-Nitrides
InN, InGaN, InGaAsN and related dilute Alloys.
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| Topic
4: |
Structural
Characterization of III-Nitrides
X-ray, TEM and AFM detection of misfit threading dislocations,
stacking disorders, inversion domain boundries, etc.
|
| Topic
5: |
Optical
and Electrical Characterization of III-Nitrides
PL and CL of free and bound excitons, D-A pair recombination,
micro PL and Raman; temp. depend. Hall transport, DLTS, thermally
stimulated current meas. of deep traps, electro-chemical CV
profiling, etc.
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| Topic
6: |
Defects,
Doping and Compensation of III-Nitrides
Native point defect formation, p and n-dopant activation,
and compensation mechanisms in GaN and related III-N's and
alloys.
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| Topic
7: |
Polarity
and Polarization Fields in Wurtizic GaN and Related III-Nitrides
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| Topic
8: |
Compositional
Stability of III-Nitride Alloys and Heterostructures
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| Topic
9: |
III-Nitride
Nanostructures
Quantum dots, quantum wires, and related low dimensional structures.
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| Topic
10: |
Advances
in Dry and Wet Etch Processing of III-Nitrides
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| Topic
11: |
UV
Optical Sources and Detectors
Based on AlGaN/GaN heterostructures and superlattices at high
Al-composition for short wave UV emitters and detectors.
|
| Topic
12: |
III-Nitride
Optoelectronic Devices
InGaN/GaN-based blue and visible spectrum LED's, laser diodes,
waveguides, white phosphor light sources, etc.
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| Topic
13: |
III-Nitride
Electronic Devices
AlGaN/GaN and InGaN/GaN-based heterojunction FET's, HBT's,
for high power microwave and high temperature applications.
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| Topic
14: |
III-Nitride Spintronic Materials Growth, Characterization, and
Theory of Magnetic Semiconductor Alloys
GaMnN, Hall Effect in magnetic nitride films, transition-metal
implanted wide-bandgap materials. |
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