Home > Meetings > Workshops > 2001 Workshops > Crystalline Oxides in Semiconductors

Organizers Rodney McKee Oak Ridge National Laboratory (mckeera@ornl.gov) Kurt Eisenbeiser Motorola (kurt.eisenbeiser@motorola.com) Darrell Schlom Penn State University (schlom@pangaea.ems.psu.edu) Charles Ahn Yale University (charles.ahn@yale.edu)

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Dielectric Science and New Functionality in Device Physics for Crystalline Oxides on Semiconductors (COS)
September 11-12, 2001; Chattanooga, Tennessee, USA

Crystalline oxides grown commensurately to a semiconductor are emerging as a new physical system for MOS-based device physics. A 2-day MRS Workshop will focus discussion on new opportunities and functionality in semiconductor device physics utilizing crystalline oxides on semiconductors (COS).

COS in a MOS capacitor is a physical system based on dielectric epitaxy in a monolithic thin-film with a semiconductor. Examples of the diverse characteristics of crystalline oxides include ferroelectricity, piezoelectricity and ferromagnetism. A primary example for new functionality comes via the coupling of the anisotropy of Curie phenomena in an oxide to the charge state in the underlying semiconductor. Issues of dielectric science and electron and hole scattering at a crystalline oxide interface with a semiconductor underpin the device physics opportunities. The purpose of the workshop is to bring together scientists and engineers who are interested in both the fundamental science opportunities and device functionality in this new physical system.

Registration Includes:
Workshop Participation
Reception
2 Breakfasts . 2 Lunches . 1 Dinner . Daily Coffee Breaks

Meeting Venue:

We have planned a 2-day meeting to be held in Chattanooga, TN, on September 11-12 of this year. The organization of the meeting is for an overview talk with discussion (1-1/2 hours) followed by 16 all invited talks (each 30 minutes with 15 minutes for discussion), a poster session on the evening of the first day. The tentative plan is as follows:

Tuesday Morning, September 11
8:15 am	Rodney McKee (Chair)	"Introductions and Overview of COS and the Physical System of a Crystalline Oxide in a MOS Capacitor"
Plenary Session - Crystalline Oxides on Semiconductors - Enabling Introduction of New Functionality in Semiconductors Devices
8:30 am	John Harding	"Crystalline Oxides on Semiconductors; the view from the oxide"
9:30 am	Jean-Pierre Locquet	"The Nucleation and Control of Dielectric and Magnetic Functionality in Crystalline Oxides"
10:30 - 10:45 am		Break
Molecular Beam Epitaxy Concepts and Methodologies Relative to COS Linda Horton, Session Chair
10:45 am	Fred Walker	"Methodologies and Consequences of a Layer-Sequencing Approach to Interface Physics for an Oxide/Semiconductor Structure"
11:30 am	Bill Ooms	"Challenges and Opportunities for Epitaxial Oxides on Silicon"
12:30 - 1:30 pm		Lunch
Tuesday Afternoon, September 11
Interface Electrical Structure -- Experiment Kurt Eisenbeiser, Session Chair
1:30 pm	Scott Chambers	"Band Discontinuity Measurement and Control at Epitaxial Oxide/Si Interfaces"
2:15 pm	Curt Billman	"Electrical Characteristics of Crystalline Alkaline Earth Oxides on Semiconductors"
3:00 - 3:15 pm		Break
Piezoelectric Phenomena and Ferroelectric Device Issues Charles Ahn, Session Chair
3:15 pm	Karin Rabe	"Ferroelectricity and Piezoelectricity in Ultrathin Films and Superlattices from First Principles"
4:00 pm	T.P. Ma	"Why Is A Nonvolatile Ferroelectric Memory Transistor Still Elusive?"
Tuesday Evening, September 11
6:00 - 8:30 pm		Poster Session and Dinner
	R. Ramesh	"Crystalline Oxides on Semiconductors: Enablers of Next Generation Functional Electronics"
Wednesday Morning, September 12
Interface Electrical Structure -- Theory Annabella Selloni, Session Chair
8:30 am	Malcolm Stocks	"First Principles Studies of the Atomistic and Electronic Structure of Crystalline Oxides on Silicon"
9:15 am	Raymond Tung	"Chemical Aspects Of Band-Offset Formation At Interfaces"
10:00-10:15 am		Break
COS Structures and Semiconductors on Insulator Architectures Darrell Schlom, Session Chair
10:15 am	Jerry Woodall	"Growth and Interface Structure of InAs on GaP"
11:00 am	Jasprit Singh	"Oxide Semiconductor Heterostructures for Novel Devices"
12:00-1:00pm		Lunch
Wednesday Afternoon, September 12
Novel Materials and COS Len Feldman, Session Chair
1:00 pm	Antoine Kahn	"Structural and Electronic Aspects of Organic Molecular Film/Crystalline Oxide Interfaces"
1:45 pm	Raynien Kwo	"Advances in Surface Passivation for Si and III-V Semiconductors with Novel Oxides"
2:30-2:45 pm		Break
Quantum Computing Physics on Semiconductors R. Ramesh, Session Chair
2:45 pm	Bruce Kane	"Silicon-based Quantum Computation"
3:30 pm	Jeremy Levy	"Quantum Information Processing with Ferroelectrically Coupled Quantum Dots"
4:15 pm	Rodney McKee	Summary and Close Workshop

Plenary Address:

John Harding	University College, London	jhh@cmmp.phys.ucl.ac.uk
Jean-Pierre Locquet	IBM	ioc@zurich.ibm.com

Invited Speakers:

Fred Walker	University of Tennessee	walkerfj@ornl.gov
Bill Ooms	Motorola Labs	bill.ooms@motorola.com
Scott Chambers	Pacific Northwest National Laboratory	sa.chambers@pnl.gov
Curt Billman	Penn State University	billmanca@ornl.gov
Karin Rabe	Rutgers University	karin@physics.rutgers.edu
T.P. Ma	Yale University	T.Ma@yale.edu
Malcolm Stocks	Oak Ridge National Laboratory	stocksgm@ornl.gov
Raymond Tung	Bell Labs, Lucent Technologies	rtt@lucent.com
Jerry Woodall	Yale University	jerry.woodall@yale.edu
Jasprit Singh	University of Michigan	singh@engin.umich.edu
Antoine Kahn	Princeton University	kahn@ee.princeton.edu
Raynien Kwo	Bell Labs, Lucent Technologies	raynien@lucent.com
Bruce Kane	University of Maryland	kane@lps.umd.edu
Jeremy Levy	University of Pittsburgh	jlevy@pitt.edu

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