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WORKSHOP PROGRAM
Workshop Chair:
Glen Wilk, Lucent Technologies
Co-Organizers: Veena Misra, North Carolina State University;
Eric Vogel, NIST
Note:
Online registration is closed. Attendees can register directly at the Workshop
site in New Orleans
Purpose and Description
The scaling of the gate oxide in CMOS technology has rapidly
accelerated over the past several years. This rate of scaling
is manifested by the 1999 ITRS timeline, which now calls for
an SiO2 gate oxide thickness less than
2.0 nm for sub-0.13 µm technology nodes. This extremely
aggressive march toward ultrathin oxide layers has placed a very
high priority on finding a high-k replacement for SiO2 that will
allow CMOS scaling to continue at this remarkable pace.
This MRS workshop will span two days of invited
presentations to create a focused meeting on the topic of high-k
gate dielectrics. It is intended to bring together all of the
leading researchers in this field for discussion on the critical
issues which must be addressed and solved in order for high-k
materials to successfully replace SiO2. Along these lines, there
will be only minimal discussion on issues related to ultrathin
SiO2. The critical issues will include interface stability, physical
and electrical analysis, and CMOS process
integration compatibility.
Invited presentation will be 30-45 minutes
with appropriate time for in depth discussion. Two panel discussions
will address the key roadblocks facing high-k gate dielectrics.
Representatives from major tool vendors will be present at the
workshop and in the panel discussions to provide essential information
for understanding the requirements of process capability and
tool development timelines.
This workshop will be the first of its kind
for high-k dielectrics, and will set the course for the integration
of high-k gate dielectrics into CMOS technology. We look forward
to seeing you there.
Speakers (partial list):
Prasad Alluri, Motorola; Steve Campbell, Univ. Minnesota; Ravi
Droopad, Motorola; D.L. Kwong, Univ. Texas-Austin; Jack Lee,
Univ. Texas-Austin; Gerry Lucovsky, North Carolina State Univ.;
Yanjun Ma, Sharp; Veena Misra, North Carolina State Univ.; Greg
Parsons, North Carolina State Univ.; Eric Vogel, NIST; Glen Wilk,
Lucent Technologies.
Workshop Topics
Scaling/Integration
· SiO2 Limitations/Overview alternate
approaches
· High-k Reliability Issues
· High-k Integration/Metal Gates
Binary Oxides
· RTCVD Ta2O5, ZrO2, HfO2
· UHV CVD TiO2, TiSixOy, ZrO2
· Sputtering ZrO2, HfO2
· plus additional presentations
Complex Oxides
· Zr-Al-O Sputtering
· SrTiO3 MBE
· plus additional presentations
· Panel Discussion on Metal
· Gates, Integration, Manufacturability (with Tool Vendor
Input)
Silicates
· Sputtering of Silicates/Overview
· Sputtering/CVD Hf-Si-O
· RTCVD of Zr(Hf)-Si-O
· RPECVD of Zr-Si-O, etc.
· MBE approaches
Panel Discussion on Critical Issues to be
Resolved/Wrap up
Registration Includes:
Workshop participation
2 continental breakfasts
2 lunches
Workshop reception
Daily coffee breaks
- Special Airfare
- No Saturday Night Stay Required
- Exclusive Fares with Delta, American and
US Airways
- Attendees using Passport To Travel will receive:
- · Special Fares on Delta Airlines,
American Airlines and US Airways with no Saturday night stay
required.*
- Minimum two-night stay or 5-10% discounts
on published fares on Delta Airlines, American Airlines and US
Airways.
- These Discounted Fares will be applied when
the Special Fare is not available.
- Special Fares and Discounted Fares cannot
be combined.
- · Lowest available air fares on other
airlines.
- · Fax service at 412-835-5333.
- · Dedicated toll-free number at 877-835-1200,
answered 8:30 am to 5:30 pm Eastern time, Monday through Friday.
- · Maximum 72-hour response to mail,
phone, fax and email requests.
- *
The no-Saturday-night-stay policy applies to continental US,
Canada, and Caribbean bookings only.
Contact:
MRS/Passport To Travel
1665 Washington Road
Pittsburgh, PA 15228-1622
Tel: 877-835-1200 or
412-835-1200
Fax: 412-835-5333
E-mail: sales@passporttotravel.net
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