The Ferroelectric Thin Films V Symposium will present the latest developments in basic material studies, device and materials process integration issues, growth of complex, multicomponent ferroelectric thin films and advanced characterization techniques. Thus, the technical background of this symposium emphasizes the use of advanced materials science approaches for the solution of next-generation ferroelectric thin-film device fabrication and performance issues. The ever-growing sophistication of the ferroelectric thin-film community is marked by recent developments in new materials, electrode systems, high-density optical and electrical device process integration, and novel film deposition procedures. The piezoelectric, electro-optic, dielectric, pyroelectric, and ferroelectric properties of these films are being exploited in applications ranging from ULSI DRAMs to piezoelectric micromotors.
Technical topics for the symposium are:
*Fundamental properties of ferroelectric thin films
* Structure-property-processing relationships
* Reliability issues as they relate to interfaces, defects, and degradation phenomena
* Processing and integration with semiconductor technologies
* Vapor-phase deposition techniques
* Solution-based deposition technologies
* Pulsed laser deposition
* ULSI DRAM materials
* Microsensors and actuators ("smart" materials)
* Decoupling capacitor technology
* Electro-optic materials and devices
* Pyroelectric materials and devices
* New materials and processes
A tutorial complementing this symposium is tentatively planned to precede the symposium. Further information will be included in the program book scheduled for mailing February 1996.
Partial list of invited speakers: Eric Cross (Pennsylvania State University); R.M. White (University of California, Berkeley); Michael Sayer (Queen's University); Robert Pohanka (Office of Naval Research); Rainer Waser (University of Aachen); Angus Kingon (North Carolina State University); Duane Dimos (Sandia National Laboratories); N.S. Kang (Samsung Electronics); Sandwip Dey (Arizona State University); Y. Mihara (Olympus); William Warren (Sandia National Laboratories); K.S. No (KAIST); Scott Summerfelt (Texas Instruments); James Speck (University of California, Santa Barbara); and D.J. Taylor (Motorola)
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Symposium Organizers
R. Ramesh
Department of Materials Science
and Center for Superconductivity
Research
University of Maryland
College Park, MD 20742
Phone (301) 405-7364
Fax (301) 314-2029
Bruce A. Tuttle
Department 1845/MS 0607
Sandia National Laboratories
P.O. Box 5800
Albuquerque, NM 87185
Phone (505) 845-8026
Fax (505) 844-2974
Seshu B. Desu
Department of Materials Science
and Engineering
Virginia Tech
203 Holden Hall
Blacksburg, VA 24061
Phone (703) 231-6820
Fax (703) 231-8919
In K. Yoo
New Materials and Devices Center
Samsung Advanced Institute of Technology
P.O. Box 111
Suwon, Kyongki 440-600
Korea
Phone (82) 331-280-9389
Fax (82) 331-280-9308
Robert E. Jones
MD/K10
Motorola
3501 Ed Bluestein Blvd.
Austin, TX 78721
Phone (512) 933-7237
Fax (512) 933-5497
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