The symposium on materials reliability in microelectronics continues to provide a forum for the reliability issues concerning metallic and dielectric thin films and the IC features and devices produced from them. Reduced feature size (interconnect line widths, oxide thicknesses, and transistor channel lengths), increased speed, and larger area (more devices/chip) are all key factors contributing to the continual performance and functionality improvements in integrated circuit (IC) technology. These same factors place growing demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how materials may be tailored to enable future reliability improvements.
The broad, thematic areas of the symposium seek to foster this improved understanding. They include: experimental and theoretical work on electromigration, stress migration, mechanical stress, and oxide reliability; the physics of failure mechanisms; microstructural influences on interconnect and device reliability; designing for reliability through novel materials properties and processing; and reliability simulations and modeling. The symposium focuses on materials and physics issues rather than the traditional, statistical, accelerated electrical testing aspects of IC reliability. Papers exploring the proactive, materials aspects of designing for reliability are particularly encouraged.
A special part of this year's symposium will be a historical session on electromigration, featuring James Black, Ilan Blech, Paul Ho, Rolf Hummel, and Robert Rosenberg, and moderated by James Lloyd (Digital Equipment Corporation).
Contributed papers are solicited in the following and related areas:
* Electromigration in interconnects, contacts, and vias
* Stress relaxation and stress migration
* Stress measurements in films and interconnects, microfocused stress measurements
* Stress and electromigration interactions
* Dielectric breakdown; physics, chemistry, and processing issues in developing reliable ultrathin dielectrics
* Analytical and electronic characterization of oxide traps and oxide/silicon interface traps involved in time-dependent dielectric breakdown, hot-carrier damage, and radiation damage of dielectric thin films
* Metal/dielectric interactions; film adhesion
* Metal microstructure in films and interconnects: grain growth, texture, precipitate formation, evolution during processing and stressing, influence on electromigration and stress migration
* Intermetallic formation and properties; diffusion barriers
* Designing and processing materials and microstructures for reliable devices
* Reliability of copper and novel aluminum-alloy metallizations
* Novel analytical techniques for studying degradation mechanisms and materials properties; noise and resistance measurements
* Reliability modeling and simulations: atomistic, mesoscopic, and microstructural
Joint sessions are planned with Symposium G: Semiconductors on Insulators - Fundamentals and Technology; Symposium K: Advanced Metallization for Future ULSI; and Symposium CC: Thin Films - Stresses and Mechanical Properties VI.
Partial list of invited speakers: John E. Sanchez, Jr. (Advanced Micro Devices); Robert A. Buhrman (Cornell University); Eduard Arzt (Max-Planck-Institut für Metallforschung); C.K. Hu (IBM T.J. Watson Research Center); Timothy Oldham (Army Research Laboratory); Kenneth P. Rodbell (IBM T.J. Watson Research Center); William A. Lanford (SUNY-Albany); and John F. Conley, Jr. (Pennsylvania State University).
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Symposium Organizers
William F. Filter
Sandia National Laboratories
P.O. Box 5800 - MS 1081
Albuquerque, NM 87185-1081
Phone (505) 844-3971
Fax (505) 844-2991
wfilter@sandia.gov
Anthony S. Oates
AT&T Bell Laboratories
9333 South John Young Parkway
Orlando, FL 32819
Phone (407) 345-7536
Fax (407) 345-7639
a.s.oates@att.com
J. Joseph Clement
Digital Equipment Corporation
77 Reed Road, HL02-3/J9
Hudson, MA 01749
Phone (508) 568-7379
Fax (508) 568-4681
clement@asdg.enet.dec.com
Robert Rosenberg
IBM T.J. Watson Research Center
P.O. Box 218
Yorktown Heights, NY 10598
Phone (914) 945-1888
Fax (914) 945-4581
rros@watson.ibm.com
Patrick M. Lenahan
Department of Engineering Science
and Mechanics
The Pennsylvania State University
#8 Hammond
University Park, PA 16802
Phone (814) 863-4630
Fax (814) 863-7967
pmlesm@engr.psu.edu
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