Fundamentals and Technology
Semiconductors on insulators are now the subject of great interest owing to both a new array of methods for fabrication of single-crystal and polycrystalline semiconductor thin films on insulating substrates and growing technological demand for electronic and optoelectronic devices on insulating substrates. In addition, to progress on growth of vapor-deposited thin films and separation by ion implantation, new fabrication methods involving pulsed laser crystallization and transfer of single-crystal films to other substrates have emerged, suggesting a wide array of new possibilities for integration of elemental (primarily Si) and compound semiconductor (primarily III-V) materials to a single substrate that may enable new applications in low-power electronics, flat displays, optoelectronic integrated circuits, and photovoltaics. Reports of both new and existing approaches to semiconductor-on-insulator materials are welcomed, especially those that clarify the fundamental scientific and technological issues that define the method studied. A significant feature of the symposium will be a panel discussion on A Critical Assessment of Silicon-on-Insulator: Technologies and Prospects for Applications . Joint sessions with other symposia are planned.
Papers are solicited in the following areas:
* All Silicon-on-insulator technologies, including:
* SIMOX
* Wafer bonding and epitaxial film transfer techniques
* Laser crystallization of polycrystalline films
* Solid-state growth processes for polycrystalline films
* Issues for large-grain polycrystalline semiconductors on amorphous insulators
* Epitaxial growth of semiconductor/insulator/semiconductor heterostructures
* Semiconductor-insulator interfaces: structural and electronic characterization
* Thin-film electronic and optoelectronic device applications (e.g., low-power CMOS, displays, OEICs, solar cells, etc.)
Partial list of invited speakers: E. Yablonovitch (University of California, Los Angeles); T. Noguchi (SONY); P. Pitner (SiBond); J. Im (Columbia University); S. Nakashima (NTT); J. Boyce (Xerox); K. Sakaguchi (Canon); G. Cullen (Sarnoff Labs); and K. Sukegawa (Fujitsu)
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Symposium Organizers
Harry A. Atwater
Applied Physics/MS 128-95
Caltech
Pasadena, CA 91125
Phone (818) 395-2197
Fax (818) 795-7258
haa@daedalus.caltech.edu
James Comfort
IBM T.J. Watson Research Center
P.O. Box 218
Yorktown Heights, NY 10598
Phone (914) 945-2848
Fax (914) 945-3623
comfort@watson.ibm.com
Takao Yonehara
Canon R&D Center
6770 Tamura
Hiratsuka, Kanagawa 254
Japan
Phone (81) 463-54-2211
Fax (81) 463-55-8626
yonehara@cau1.crc.canon.co.jp
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