In the last few years, high-performance heterojunction devices have been demonstrated in pseudomorphic GeSi/Si films. As a result, work in this area has rapidly expanded. Growth techniques include molecular beam epitaxy and conventional, rapid-thermal, and ultrahigh-vacuum chemical vapor deposition. The critical layer thickness, as well as defect formation and propagation mechanisms, have been the subject of considerable scrutiny. New characterization techniques have been developed to measure layer and interfacial properties. The application of etching, oxidation, diffusion, and other processing techniques to these layers has been extensively studied. Epitaxial, strained GeSi has been applied to large-scale integrated circuits, motivating further work on defect formation and thermal and electrical stability. In another class of applications, the strain is purposely relaxed to allow growth of overlying layers with different lattice constants. Polycrystalline GeSi layers are being investigated as the gate electrodes of MOS transistors and as the active layers of thin-film transistors. For gate electrodes and low-resistance ohmic contacts, silicide formation on GeSi is being studied. In yet another direction, carbon-silicon-germanium alloys provide the device designer independent control of strain and bandgap and may allow GeSi to be used in a broader range of applications. Finally, new techniques, such as growth on compliant substrates, have allowed independent control of the strain state with very low threading dislocation densities.
Please note that this symposium is planned for two-and-a-half days and will be run in conjunction with Symposium B: Defects and Interfaces in Lattice-Mismatched Semiconductor Heterostructures, and Symposium N: Rapid Thermal and Integrated Processing V.
Original papers are requested dealing with, or related to, the following topics:
* Growth and characterization of GeSi and Group IV terneries
* Thermal and electrical stability of pseudomorphic layers
* Defect formation and control; interfacial properties and characterization
* Compliant substrates and other techniques for the formation of low-defect, relaxed GeSi layers
* Diffusion in strained and unstrained GeSi layers
* Silicidation of GeSi layers
* Novel applications of GeSi layers
Please be sure to indicate your preference for poster or regular session.
Yes, Tell Me How To Submit an Abstract
Symposium Organizers
Stephen A. Campbell
Department of Electrical Engineering
University of Minnesota
200 Union Street
Minneapolis, MN 55455
Phone (612) 625-5876
Fax (612) 625-4583
campbell@ee.umn.edu
Ted Kamins
Hewlett-Packard Labs
P.O. Box 10350 - 26L
Palo Alto, CA 94303-0867
Phone (415) 857-5470
Fax (415) 813-3279
kamins@hpl.hp.com
Subramanian Iyer
B/310, ZIP SB1
SiBond
Hudson Valley Research Park
Hopewell Junction, NY 12533
Phone (914) 892-1400
Fax (914) 892-6135
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