Symposium E: III-Nitride, SiC, and Diamond Materials for Electronic Devices
MATERIALS RESEARCH SOCIETY - SPRING MEETING 1996
San Francisco, CA April 8-12, 1996
The symposium program includes 13 invited speakers, over 130 contributed
papers and a panel discussion.(see the program at www.mrs.org under
"meetings") Because of the rapid developments of new research and
applications involving III-N, SiC and Diamond semiconductors, we invite
submission of Late News Posters for this symposium. These papers should
represent significant advances that have not been widely discussed. A very
limited number will be accepted and presented.
The accepted Late News Posters will be displayed for a single day at the
meeting. Viewing will be during morning and afternoon coffee breaks, and
manuscripts will be considered for the proceedings volume.
Abstracts should be prepared following the MRS Format and should be
submitted by Email or FAX to Bob Nemanich (see below) prior to February 29.
Abstracts will be considered as they are received.
Symposium Organizers:
D. Kurt Gaskill
Naval Research Laboratory
Washington, DC 20375-5000
Phone: 202-404-8712
Fax 202-767-4290
gaskill@estd.nrl.navy.mil
Chuck Brandt
Westinghouse Science &Technology Center
Pittsburgh, PA 15235
Phone: 412-256-1881
Fax 4120-256-1877
cbrandt@aeslcad.pgh.wec.com
Robert J. Nemanich
N. C. State University
Raleigh, NC 27695-8202
Phone:919-515-3225
Fax: 919-515-7331
Robert_Nemanich@ncsu.edu
Symposium E: III-Nitride, SiC, and Diamond Materials for Electronic Devices
Recently, extraordinary improvements in the quality of Diamond, SiC, and III-N Semiconductors have been reported. These improvements have resulted in remarkable advances in electronic materials and devices having negative electron affinity, RF power generation, long-term memory, high voltage control, etc., applications. Many of these advances take advantage of commonalities in the synthesis and fabrication of these devices. Therefore, it is of great interest to compare and contrast the effects of existing science and technology on the formation and processing of these materials to each other and to evaluate whether fundamental limits have been reached or, if not, to help develop new methods of achieving those limits.
Contributed papers are solicited in the following and related areas:
* Formation and properties of substrates suitable for epitaxy and/or implantation
* Formation of insulating layers and the role of compensating impurities, defects, and traps
* Epilayer formation and doping control, activation of dopants, compensation mechanisms, uniformity, and reproducibility; interface formation and the presence of trapped charge
* Approaches to and stability of metallization at elevated temperatures
* Dry and wet processing issues, novel lithographic approaches, and surface passivation
* Performance of state-of-the-art electron devices and novel structures in terms of output power, stability, device lifetime; comparison of performance to device model calculations with emphasis on how material properties determine device performance (both experimental and theoretical)
* Systems insertion issues: manufacturability, commercial applications, and integration of components into existing systems
A four-day symposium is anticipated, and a joint session with Symposium C: Compound Semiconductor Electronics and Photonics is envisioned.
Partial list of invited speakers: P.K. Bachmann (Philips GmbH); Electron Emission from CVD Diamond; J. Bernholc (North Carolina State University), GaN Native Defect Theory; S. Binari (Naval Research Laboratory, GaN RF Devices; S. Denbaars (University of California, Santa Barbara), GaN Growth and Characterization; K. Doverspike (Hewlett-Packard), GaN Film Growth; M. Ghezzo (General Electric CRD), SiC Power Devices; R. Hopkins (Westinghouse), SiC Substrate Crystal Growth; P. Pehrsson (Naval Research Laboratory), Diamond Surface Chemistry; W. Qian (Carnegie Mellon University), GaN Characterization, TEM; and L. Rea (Wright Laboratory), SiC Device DoD Applications; R. Rupp (Siemens), SiC Epitaxial Growth; R. Trew (Case Western Reserve University), Wide Bandgap Device Modeling; W. Yarborough (Pennsylvania State University), Synthesis of c-BN
Yes, Tell Me How To Submit an Abstract
Symposium Organizers
Chuck Brandt
SiC Electronics
Westinghouse Science &
Technology Center
1310 Beulah Rd./MS 501-2D16
Pittsburgh, PA 15235
Phone (412) 256-1881
Fax (412) 256-1877
cbrandt@aeslcad.pgh.wec.com
D. Kurt Gaskill
Code 6861
Chemical Deposition Section
Naval Research Laboratory
Washington, DC 20375-5000
Phone (202) 404-8712
Fax (202) 767-4290
gaskill@estd.nrl.navy.mil
Robert J. Nemanich
Departments of Physics and
Materials Science
North Carolina State University
Raleigh, NC 27695-8202
Phone (919) 515-3225/3468
Fax (919) 515-7331
nemanich@unity.ncsu.edu
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