Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs, and optical amplifiers. The field has been growing rapidly in the past few years; and this symposium serves to bring together the community of investigators addressing in depth the unique properties of rare-earth doped semiconductors (group IV, III-V, and II-VI), addressing current trends in research and fundamental mechanisms, and identifying the potential for current and future electronic and optoelectronic applications.
Papers are solicited in the following areas:
* Rare-earth doped semiconductors (group IV, III-V, II-VI)
* Structural aspects, MBE, CVD, ion implantation, rare-earth precursors, co-doping, novel growth techniques
* Electrical properties in relation to optical properties
* Excitation and de-excitation mechanisms
* Theoretical calculations of electronic properties
* Electroluminescent devices, LEDs, lasers, amplifiers
* Optoelectronic integration and novel device concepts
A tutorial complementing this symposium is tentatively planned to precede the symposium. Further information will be included in the program book scheduled for mailing February 1996.
Partial list of invited speakers: J. Michel (Massachusetts Institute of Technology), Er-Doped Si; K. Takahei (NTT), Energy Transfer Mechanisms in III-Vs; B. Wessels (Northwestern University), MOCVD, GaP: Er; and T. Gregorkiewicz (University of Amsterdam), Excitation Mechanisms; S.J. Pearton (University of Florida), Er-Implanted GaN
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Symposium Organizers
Albert Polman
FOM-Institute AMOLF
Kruislaan 407
NL-1098 SJ Amsterdam
The Netherlands
Phone (31) 20-6081234
Fax (31) 20-6684106
polman@amolf.nl
Salvo Coffa
CNR-IMETEM
Stradale Primosole 50
I-95121 Catania
Italy
Phone (39) 95-591212
Fax (39) 95-7139154
coffa@ct.infn.it
Robert N. Schwartz
Hughes Research Laboratories
3011 Malibu Canyon Road
Malibu, CA 90265
Phone (310) 317-5595
Fax (310) 317-5679
rschwartz@msmail4.hac.com
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