Heterostructures
Epitaxially-grown, lattice-mismatched heterostructures are becoming increasingly important for microelectronic and optoelectronic devices. Examples include blue-green lasers fabricated from II-VI semiconductors, lasers, light emitting diodes (LEDs) and high-electron mobility transistors (HEMTs) made of III-V semiconductors, and SiGe heterojunction bipolar transistors (HBTs). Some devices are fabricated from pseudomorphic structures where the epitaxial layers remain fully strained with their in-plane lattice parameter equal to that of the substrate. For other applications, the mismatch is relieved by defects at heterointerfaces. The need to prevent strain relaxation in thin layers or to control the density and distribution of defects in intentionally relaxed structures has led to extensive research on strain relaxation mechanisms, on the nature and properties of the defects, and on the effects of the defects on the properties of relaxed semiconductor films and their interfaces.
This symposium is intended to encompass both fundamental and applied aspects of the above problems in all semiconductors, including II-VI, III-V, and Group IV materials.
Topics to be covered include:
* Structural aspects of defects and interfaces and their relation to the electronic and optical properties of heterostructures and devices fabricated from them
* Mechanisms of strain relaxation and defect introduction
* Properties of dislocations
* Electronic properties of heterointerfaces, e.g., semiconductor/metal systems and wide band-gap insulator/semiconductor systems
* Effects of device fabrication processes on strained heterostructures or on the defects in relaxed structures
* New techniques for characterizing defects and interfaces
Joint sessions may be organized with Symposium C: Compound Semiconductor Electronics and Photonics, Symposium E: III-Nitride, SiC, and Diamond Materials for Electronic Devices, and Symposium F: GeSi and Related Compounds.
Partial list of invited speakers: I.C. Bassignana (Bell-Northern Research); A.R. Cullis (DRA Malvern); R.L. Gunshor (Purdue University); K. Ismail (IBM and University of Cairo); D.H. Rich (University of Southern California); L. Salamanca-Riba (University of Maryland); H.P. Strunk (University of Ehrlangan); and P.W. Voorhees (Northwestern University)
Yes, Tell Me How To Submit an Abst ract
Symposium Organizers
Patricia M. Mooney
IBM T.J. Watson Research Center
P.O. Box 218
Yorktown Heights, NY 10598
Phone (914) 945-3445
Fax (914) 945-4581
mooney@watson.ibm.com
Leonard J. Brillson
Xerox Webster Research Center
800 Philips Road - 0114-41D
Webster, NY 14580
Phone (716) 422-6468
Fax (716) 422-1035
brillson.wbst128@xerox.com
Karen L. Kavanagh
Department of Electrical and
Computer Engineering
University of California, San Diego
La Jolla, CA 92093-0407
Phone (619) 534-4749
Fax (619) 534-0556
kkavanagh@ucsd.edu
Bruce W. Wessels
Department of Materials Science
and Engineering
Northwestern University
2225 North Campus Drive
Evanston, IL 60208
Phone (708) 491-3219
Fax (708) 491-7820
b-wessels@nwu.edu
|
Home •
News •
Society Information •
What's New •
Site Map •
Comments •
Search Contacts • MRS Meetings • Membership • MRS Publications • Marketing Opportunities
|
