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Call for Papers / MRS Symposium G
Science
and Technology of Nonvolatile Memories
Session
Topics | Tutorial | Invited Speakers | Organizers | Abstract
Submission
The
development of the next generation of nonvolatile memories
(NVM) will require a new paradigm in materials, materials
integration, device architecture, and device physics. In
addition, the development of new fabrication processes
to produce nanostructures using either top-down (advanced
conventional lithography) or bottom-up (self-assembly)
approaches will be necessary. The new materials required
for the next generation of NVM will go beyond silicon, which
has been the cornerstone of the microelectronics revolution
of the 20 th Century. Materials that might find application
in this new generation of NVM include complex oxides (e.g.,
perovskite ferroelectrics and high-k dielectrics),
magnetic thin films, chalcogenides, organics, carbon nanotubes,
and others not yet identified. The synthesis of the new generation
of materials and integration strategies will require a combination
of synthesis methods and in situ characterization
techniques capable of providing valuable information at the
atomic scale. The aim of this symposium is to provide a forum
in order to stimulate new ideas toward fundamental and applied
science, as well as device design and fabrication of nanostructures,
which will be necessary to understand the nanoscale structure-property
relationships of the thin films and their novel hybrid combinations
that will be used in the fabrication of future NVM.
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Session
Topics
Topics
of interest include, but are not limited to:
- Thin-film synthesis and characterization relevant
to nonvolatile memories
- Materials integration and processing
- Device architecture and electrical characterization
- NVM: FLASH, FeRAM, MRAM, phase change chalcogenide,
organic thin film, molecular, nanoscale nonvolatile Si
memory, MEMS/NEMS, CNT-based memories, and new concepts
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Tutorial Session
A
tutorial complementing this symposium is tentatively planned.
Further information will be included in the program that
will be available in January. (Find out more about the tutorial
sessions planned for this meeting.)
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Invited
Speakers
Invited
speakers include: Carlos
Paz de Araujo (Univ. of Colorado-Colorado Springs
and Symetrix), Evangelos Eleftheriou (IBM
Zürich Lab, Switzerland), Al Fazio (Intel
Corp.), Kinam Kim (Samsung Electronics,
Korea), S. Parkin (IBM Almaden Research
Ctr.), Ramamoorthy Ramesh (Univ. of
California-Berkeley), Tom Rueckes (Nantero
Inc.), Georg Tempel (Infineon, Germany), Yang
Yang (Univ. of California-Los Angeles), and I.K.
Yoo (Samsung Advanced Inst. of Technology, Korea).
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Symposium
Organizers
Orlando
Auciello
Argonne
National Laboratory
Materials Science Division & Center
for Nanoscale Materials
9700 S. Cass Ave.
Argonne,
IL 60439-4838
Tel 630-252-1685
Fax 630-252-4289
auciello@anl.gov
Jan
Van Houdt
IMEC,
Kapeldreef 75
B-3001 Leuven, Belgium
Tel 32-16-281-268
Fax 32-16-281-844
jan.vanhoudt@imec.be
Rick
Carter
LSI
Logic
MS R-220
23400 NE Glisan St.
Gresham, OR
97030
Tel 503-618-5108
Fax 503-618-0308
rjcarter@lsil.com
Seungbum
Hong
Samsung
Advanced Institute of Technology
HDD Program Team
San 14-1
Nongseo-Ri, Giheung
Yongin,
Gyeonggi, Korea
Tel 82-31-280-6907
Fax 82-31-280-8368
seungbum@sait.samsung.co.kr or bum4won@samsung.com
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