This symposium is targeted at state-of-the-art for MOSFET transistors: methods, materials and modeling. For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density─Moore's Law─but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date; but, as the transistor gate length drops to 35nm and the gate oxide thickness to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task, impeding the pace of performance enhancements. In order to continue CMOS device scaling and trends, innovations, both in device structures and materials, are now required and the industry needs a new scaling vector. Starting at the 90- and 65nm-technology generation, strained siliconhas emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This symposium aims to bring together materials scientists, silicon technologists, and TCAD researchers to share experimental results and physical models related to state-of-the-art MOSFETs.

Papers are solicited in, but not limited to, the following areas:

• Process-induced strained Si development
• Different channel orientation or hybrid orientation
• SOI, ultrathin body SOI
• Multiple-gate technologies
• Characterization of the new materials and structures
• Modeling of process elements for transistor scaling including strain measurements, SOI, and multigate device characterization

Invited speakers include: Serge Biesemans (IMEC, Belgium), Ken-Ichi Goto (TSMC, Taiwan), Tsu-Jae King (Synopsys, Inc., and Univ. of California-Berkeley), Kelin Kuhn (Intel Corp.), Arkadii Samoilov (Maxim.), and Lee Smith (Synopsys, Inc.).

Scott Thompson
University of Florida
SWAMP Center
Dept. of Electrical & Computer Engineering
535 Engineering Bldg.
P.O. Box 116130
Gainesville, FL 32607
Tel 352-846-0320
Fax 352-392-8381
thompson@ece.ufl.edu

Faran Nouri
Applied Materials Inc.
974 E. Arques Ave.
Sunnyvale, CA 94086
Tel 408-584-0258
Fax 408-584-1193
faran_nouri@amat.com

Wilman Tsai
Intel Corporation
Technology Manufacturing Group
SC1-05, 2200 Mission College Blvd.
Santa Clara, CA 95054-1549
Tel 408-765-2261
Fax 408-765-2387
wilman.tsai@intel.com

Wen-Chin Lee
TSMC
Exploratory Technology Development-1, No. 8
Lin-Hsin Rd. 6
Hsinchu Science Park
Hsinchu, Taiwan 300-77, R.O.C.
Tel 886-3-666-5158
Fax 886-3-563-7525
wcleei@tsmc.com