Advances in silicon carbide materials, processing, and device designs have accelerated progress towards wide-spread production of SiC-based electronic systems and offer great promise for high-voltage, high-temperature, high-frequency applications. This symposium will examine new developments in the basic science of SiC materials, as well as rapidly maturing SiC device and processing technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals; controlling surface morphology, residual impurities, and extended defects in SiC epilayers; continued discovery and optimization of unit-step processing technologies, including ion implantation, oxidation, etching and contacts; and developing, fabricating, and testing innovative device structures and concepts.

This symposium will bring together crystal growers, materials engineers, modelers, and device physicists needed to continue the rapid pace of silicon-carbide-based technology.

Session Topics

Topics of particular interest include, but are not limited to:

• Bulk SiC growth (including large-diameter crystals), modeling, and characterization
• Epitaxial growth (doping control, morphology development, carrier lifetimes, etc.)
• Advances in ion implantation
• Improved ohmic and rectifying contacts
• Oxidation and alternative dielectric materials
• Devices (high-voltage, high-temperature, high-frequency sensors and system level benefits)
• Surfaces and interfaces
• Advances in porous SiC technology
• SiC material, device, and interface characterization and theory

Invited speakers include (partial list) : A. Cavallini (Univ. di Bologna, Italy), H.R. Chang (ASCE Power), L. Feldman (Vanderbilt Univ.), M. Loboda (Dow Corning Corp.), P. Neudeck (NASA Glenn Research Ctr.), N. Ohtani (Nippon Steel Corp., Japan), R. Okojie (NASA Glenn Research Ctr,), M. Pons (LTPCM, ENSEEG, France), S.E. Saddow (Univ. of South Florida), N.T. Son (Linkoping Univ., Sweden), A. Souzis (II-VI Inc.), U. Starke (Max-Planck-Inst., Germany), and J.J. Sumakeris (Cree Inc.)

Michael A. Capano
Purdue University
School of Electrical & Computer Engineering
465 Northwestern Ave.
W. Lafayette, IN 47907
Tel 765-494-3563
Fax 765-494-6441
capano@ecn.purdue.edu

Michael Dudley
State University of New York-Stony Brook
Dept. of Materials Science & Engineering
Stony Brook, NY 11794-2275
Tel 631-632-8500
Fax 631-632-8052
michael.dudley@stonybrook.edu

Tsunenobu Kimoto
Kyoto University-Katsura
Dept. of Electronic Science & Engineering
Nishikyo, Kyoto 615-8501, Japan
Tel 81-75-383-2300
Fax 81-75-383-2303
kimoto@kuee.kyoto-u.ac.jp

Adrian R. Powell
Cree, Inc., 4600 Silicon Dr.
Durham, NC 27703
Tel 919-313-5599
Fax 919-313-5454
adrian_powell@cree.com

Shaoping Wang
Fairfield Crystal Technology
LLC, 8 Southend Plaza
New Milford, CT 06776
Tel 860-354-2111 x-201
Fax 860-354-3093
swang@fairfieldcrystal.com